Experimental investigation of the temperature dependence of InAs-AlSb-GaSb Resonant Interband tunnel diodes

The temperature dependence of the current-voltage (I-V) characteristics of InAs-AlSb-GaSb resonant interband tunnel diodes (RITDs) has been investigated from 223 to 423 K. Several device structures were examined, with tunnel barrier thicknesses from 0.6 to 2.0 nm. For all barrier thicknesses, the pe...

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Veröffentlicht in:	IEEE transactions on electron devices 2004-07, Vol.51 (7), p.1060-1064
Hauptverfasser:	Yanyang Xu, Fay, P., Chow, D.H., Schulman, J.N.
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Barriers Copper compounds Current density Devices Diffraction Electric potential Electron microscopy Heterojunction bipolar transistors Indium compounds Semiconductor device metallization Sputtering Temperature dependence Tungsten compounds Tunnel diodes Valleys Voltage X-rays
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