Sensitive strain measurements of bonded SOI films using Moiré

The authors have developed a simple technique to quantify strain in bonded Si films and used it to compare the strain induced by two distinct wafer bonding methods. This method consists of patterning sets of moire gratings on silicon-on-insulator (SOI) substrates prior to bonding using a G-line step...

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Veröffentlicht in:	IEEE transactions on semiconductor manufacturing 2004-02, Vol.17 (1), p.35-41
Hauptverfasser:	MEINHOLD, Mitchell W, JUNG, Jong-Wan, ANTONIADIS, Dimitri A
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Bonding Deposition Electronics Exact sciences and technology Lithography Microelectronic fabrication (materials and surfaces technology) MOSFETs Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductors Silicon films Strain Testing, measurement, noise and reliability Wafers
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