Phosphor-Free GaN-Based Transverse Junction Light Emitting Diodes for the Generation of White Light
We demonstrate a GaN-based phosphor-free near-white-light light-emitting-diode (LED) structure that operates in the visible wavelengths and offers broadening and flattening optical bandwidth performance. The incorporation of GaN-based dual wavelengths (blue and green) multiple-quantum-wells with a t...
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| Veröffentlicht in: | IEEE photonics technology letters 2006-12, Vol.18 (24), p.2593-2595 |
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| container_title | IEEE photonics technology letters |
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| creator | Shi, J.-W. Huang, H.-Y. Wang, C.-K. Sheu, J.-K. Lai, W.-C. Wu, Y.-S. Chen, C.-H. Chu, J.-T. Kuo, H.-C. Wei-Ping Lin Tsung-Hsun Yang Chyi, J.-I. |
| description | We demonstrate a GaN-based phosphor-free near-white-light light-emitting-diode (LED) structure that operates in the visible wavelengths and offers broadening and flattening optical bandwidth performance. The incorporation of GaN-based dual wavelengths (blue and green) multiple-quantum-wells with a transverse p-n junction produces a device which can directly generate stable and near visible white-light emissions. The shape of the optical spectra (440-560 nm) are invariable from low to very high levels of bias currents. The problems of nonuniform carrier distribution and bias dependent electroluminescence spectra that occur in traditional phosphor-free white-light or near-white-light LEDs (with vertical p-n junctions) are eliminated by the demonstrated structure |
| doi_str_mv | 10.1109/LPT.2006.887362 |
| format | Article |
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The incorporation of GaN-based dual wavelengths (blue and green) multiple-quantum-wells with a transverse p-n junction produces a device which can directly generate stable and near visible white-light emissions. The shape of the optical spectra (440-560 nm) are invariable from low to very high levels of bias currents. The problems of nonuniform carrier distribution and bias dependent electroluminescence spectra that occur in traditional phosphor-free white-light or near-white-light LEDs (with vertical p-n junctions) are eliminated by the demonstrated structure</description><identifier>ISSN: 1041-1135</identifier><identifier>EISSN: 1941-0174</identifier><identifier>DOI: 10.1109/LPT.2006.887362</identifier><identifier>CODEN: IPTLEL</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Bias ; Electroluminescence ; Flattening ; Gallium nitride ; GaN light-emitting-diode (LED) ; Light emitting diodes ; Optical pumping ; Optical saturation ; P-n junctions ; Phosphors ; Quantum well devices ; Spectra ; Stimulated emission ; Wavelengths ; White light ; white-light generation ; Zinc</subject><ispartof>IEEE photonics technology letters, 2006-12, Vol.18 (24), p.2593-2595</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2006</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c361t-143609d4b2f486cb4250c64f824e7c8b7a765f1ea06337bba9d1cc05d541ade73</citedby><cites>FETCH-LOGICAL-c361t-143609d4b2f486cb4250c64f824e7c8b7a765f1ea06337bba9d1cc05d541ade73</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4016126$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4016126$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Shi, J.-W.</creatorcontrib><creatorcontrib>Huang, H.-Y.</creatorcontrib><creatorcontrib>Wang, C.-K.</creatorcontrib><creatorcontrib>Sheu, J.-K.</creatorcontrib><creatorcontrib>Lai, W.-C.</creatorcontrib><creatorcontrib>Wu, Y.-S.</creatorcontrib><creatorcontrib>Chen, C.-H.</creatorcontrib><creatorcontrib>Chu, J.-T.</creatorcontrib><creatorcontrib>Kuo, H.-C.</creatorcontrib><creatorcontrib>Wei-Ping Lin</creatorcontrib><creatorcontrib>Tsung-Hsun Yang</creatorcontrib><creatorcontrib>Chyi, J.-I.</creatorcontrib><title>Phosphor-Free GaN-Based Transverse Junction Light Emitting Diodes for the Generation of White Light</title><title>IEEE photonics technology letters</title><addtitle>LPT</addtitle><description>We demonstrate a GaN-based phosphor-free near-white-light light-emitting-diode (LED) structure that operates in the visible wavelengths and offers broadening and flattening optical bandwidth performance. The incorporation of GaN-based dual wavelengths (blue and green) multiple-quantum-wells with a transverse p-n junction produces a device which can directly generate stable and near visible white-light emissions. The shape of the optical spectra (440-560 nm) are invariable from low to very high levels of bias currents. The problems of nonuniform carrier distribution and bias dependent electroluminescence spectra that occur in traditional phosphor-free white-light or near-white-light LEDs (with vertical p-n junctions) are eliminated by the demonstrated structure</description><subject>Bias</subject><subject>Electroluminescence</subject><subject>Flattening</subject><subject>Gallium nitride</subject><subject>GaN light-emitting-diode (LED)</subject><subject>Light emitting diodes</subject><subject>Optical pumping</subject><subject>Optical saturation</subject><subject>P-n junctions</subject><subject>Phosphors</subject><subject>Quantum well devices</subject><subject>Spectra</subject><subject>Stimulated emission</subject><subject>Wavelengths</subject><subject>White light</subject><subject>white-light generation</subject><subject>Zinc</subject><issn>1041-1135</issn><issn>1941-0174</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkD1PwzAQQCMEEqUwM7BYLExpfbFjJyMfbQFV0KGI0XKcS-OqjYudIvHvSQliYLob3judXhRdAh0B0Hw8XyxHCaVilGWSieQoGkDOIaYg-XG3024HYOlpdBbCmlLgKeODyCxqF3a18_HUI5KZfonvdMCSLL1uwif6gOR535jWuobM7apuyWRr29Y2K_JgXYmBVM6Ttu5cbNDrH9BV5L22LfbGeXRS6U3Ai985jN6mk-X9Yzx_nT3d385jwwS0MXAmaF7yIql4JkzBk5Qawass4ShNVkgtRVoBaioYk0Wh8xKMoWmZctAlSjaMbvq7O-8-9hhatbXB4GajG3T7oLJcJIwymnXk9T9y7fa-6Z5TmRCM51KKDhr3kPEuBI-V2nm71f5LAVWH5KpLrg7JVZ-8M656wyLiH80pCEgE-wZQb3vp</recordid><startdate>20061215</startdate><enddate>20061215</enddate><creator>Shi, J.-W.</creator><creator>Huang, H.-Y.</creator><creator>Wang, C.-K.</creator><creator>Sheu, J.-K.</creator><creator>Lai, W.-C.</creator><creator>Wu, Y.-S.</creator><creator>Chen, C.-H.</creator><creator>Chu, J.-T.</creator><creator>Kuo, H.-C.</creator><creator>Wei-Ping Lin</creator><creator>Tsung-Hsun Yang</creator><creator>Chyi, J.-I.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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The incorporation of GaN-based dual wavelengths (blue and green) multiple-quantum-wells with a transverse p-n junction produces a device which can directly generate stable and near visible white-light emissions. The shape of the optical spectra (440-560 nm) are invariable from low to very high levels of bias currents. The problems of nonuniform carrier distribution and bias dependent electroluminescence spectra that occur in traditional phosphor-free white-light or near-white-light LEDs (with vertical p-n junctions) are eliminated by the demonstrated structure</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/LPT.2006.887362</doi><tpages>3</tpages><oa>free_for_read</oa></addata></record> |
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| subjects | Bias Electroluminescence Flattening Gallium nitride GaN light-emitting-diode (LED) Light emitting diodes Optical pumping Optical saturation P-n junctions Phosphors Quantum well devices Spectra Stimulated emission Wavelengths White light white-light generation Zinc |
| title | Phosphor-Free GaN-Based Transverse Junction Light Emitting Diodes for the Generation of White Light |
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