Performance analysis of the segment npn anode LIGBT

The performance of a high-voltage lateral insulated gate bipolar transistor (LIGBTs) with segmented n+p/n anode fabricated in junction isolation technology is experimentally investigated at both room and elevated temperatures. Detailed two dimensional numerical modeling of a vertical representation...

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Veröffentlicht in:	IEEE transactions on electron devices 2005-11, Vol.52 (11), p.2482-2488
Hauptverfasser:	Green, D.W., Sweet, M., Vershinin, K.V., Hardikar, S., Narayanan, E.M.S.
Format:	Artikel
Sprache:	eng
Schlagworte:	Anodes Applied sciences Design. Technologies. Operation analysis. Testing Devices Electric potential Electronics Exact sciences and technology Insulated gate bipolar transistors Integrated circuits Isolation technology Lateral insulated gate bipolar transistor (LIGBT) Other multijunction devices. Power transistors. Thyristors power IC Power integrated circuits Representations segmented anode Segments Semiconductor device modeling Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Switching Transistors Voltage drop
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