A CMOS single-pole-four-throw switch
An one-pole-four-throw switch that can be used to switch between the band select filters of four cellular bands and a single input programmable low noise amplifier has been demonstrated in a 0.18-mum complementary metal oxide semiconductor process. Its insertion losses are 0.39, 0.61, 0.66, and 0.75...
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| Veröffentlicht in: | IEEE microwave and wireless components letters 2006-03, Vol.16 (3), p.128-130 |
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| container_end_page | 130 |
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| container_title | IEEE microwave and wireless components letters |
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| creator | Kwangchun Jung O, K.K. |
| description | An one-pole-four-throw switch that can be used to switch between the band select filters of four cellular bands and a single input programmable low noise amplifier has been demonstrated in a 0.18-mum complementary metal oxide semiconductor process. Its insertion losses are 0.39, 0.61, 0.66, and 0.75dB in the GSM900, DCS1800, PCS1900, and wide-band code division multiple access system bands. IIP3's of the switch are ~27dBm and isolations are greater than 22dB |
| doi_str_mv | 10.1109/LMWC.2005.869857 |
| format | Article |
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Its insertion losses are 0.39, 0.61, 0.66, and 0.75dB in the GSM900, DCS1800, PCS1900, and wide-band code division multiple access system bands. IIP3's of the switch are ~27dBm and isolations are greater than 22dB</description><identifier>ISSN: 1531-1309</identifier><identifier>ISSN: 2771-957X</identifier><identifier>EISSN: 1558-1764</identifier><identifier>EISSN: 2771-9588</identifier><identifier>DOI: 10.1109/LMWC.2005.869857</identifier><identifier>CODEN: IMWCBJ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>1P4T switch ; Amplifiers ; Applied sciences ; Bands ; Circuit properties ; CMOS ; Code division multiple access ; Communication switching ; Complementary metal oxide seminconductor (CMOS) integrated circuits ; Costs ; Design. Technologies. Operation analysis. Testing ; Electric, optical and optoelectronic circuits ; Electronic circuits ; Electronics ; Exact sciences and technology ; Filters ; Insertion loss ; Integrated circuits ; Low noise ; metal oxide semiconductor field effect transistor (MOSFET) switch ; Metal oxide semiconductors ; Microwaves ; Multiaccess communication ; Parasitic capacitance ; Radio frequency ; radio frequency (RF) switch ; Resistors ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Switches ; Switching circuits ; Switching, multiplexing, switched capacity circuits</subject><ispartof>IEEE microwave and wireless components letters, 2006-03, Vol.16 (3), p.128-130</ispartof><rights>2006 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2006</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c414t-c3a459d3b30694b518e8a7f8066ae954879bb2f0e61ab0b066752e4868cb85643</citedby><cites>FETCH-LOGICAL-c414t-c3a459d3b30694b518e8a7f8066ae954879bb2f0e61ab0b066752e4868cb85643</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1603588$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1603588$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=17652294$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Kwangchun Jung</creatorcontrib><creatorcontrib>O, K.K.</creatorcontrib><title>A CMOS single-pole-four-throw switch</title><title>IEEE microwave and wireless components letters</title><addtitle>LMWC</addtitle><description>An one-pole-four-throw switch that can be used to switch between the band select filters of four cellular bands and a single input programmable low noise amplifier has been demonstrated in a 0.18-mum complementary metal oxide semiconductor process. Its insertion losses are 0.39, 0.61, 0.66, and 0.75dB in the GSM900, DCS1800, PCS1900, and wide-band code division multiple access system bands. IIP3's of the switch are ~27dBm and isolations are greater than 22dB</description><subject>1P4T switch</subject><subject>Amplifiers</subject><subject>Applied sciences</subject><subject>Bands</subject><subject>Circuit properties</subject><subject>CMOS</subject><subject>Code division multiple access</subject><subject>Communication switching</subject><subject>Complementary metal oxide seminconductor (CMOS) integrated circuits</subject><subject>Costs</subject><subject>Design. Technologies. Operation analysis. Testing</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronic circuits</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Filters</subject><subject>Insertion loss</subject><subject>Integrated circuits</subject><subject>Low noise</subject><subject>metal oxide semiconductor field effect transistor (MOSFET) switch</subject><subject>Metal oxide semiconductors</subject><subject>Microwaves</subject><subject>Multiaccess communication</subject><subject>Parasitic capacitance</subject><subject>Radio frequency</subject><subject>radio frequency (RF) switch</subject><subject>Resistors</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Switches</subject><subject>Switching circuits</subject><subject>Switching, multiplexing, switched capacity circuits</subject><issn>1531-1309</issn><issn>2771-957X</issn><issn>1558-1764</issn><issn>2771-9588</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNqNkUtLw0AQx4MoWKt3wUsRH6fUfe_ssQRf0NKDisdls25sSprU3ZTit3dDCgUP4mVmmPnNDDP_JDnHaIwxUnfT2Xs2JgjxMQgFXB4kA8w5pFgKdtjFFKeYInWcnISwRAgzYHiQXE1G2Wz-Mgpl_Vm5dN1EUzQbn7YL32xHYVu2dnGaHBWmCu5s54fJ28P9a_aUTuePz9lkmlqGWZtaahhXHzSnSCiWcwwOjCwACWGc4gykynNSICewyVEe05ITx0CAzYELRofJbT937ZuvjQutXpXBuqoytWs2QYMSBAvKVCRv_iQJKEQlhX-ACBMpcQQvf4HL-IY6nqtByPjXuDtCqIesb0LwrtBrX66M_9YY6U4G3cmgOxl0L0Nsud7NNcGaqvCmtmXY90nBCVHd7Rc9Vzrn9mWBKAegP6eZjDU</recordid><startdate>20060301</startdate><enddate>20060301</enddate><creator>Kwangchun Jung</creator><creator>O, K.K.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>7U5</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20060301</creationdate><title>A CMOS single-pole-four-throw switch</title><author>Kwangchun Jung ; O, K.K.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c414t-c3a459d3b30694b518e8a7f8066ae954879bb2f0e61ab0b066752e4868cb85643</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2006</creationdate><topic>1P4T switch</topic><topic>Amplifiers</topic><topic>Applied sciences</topic><topic>Bands</topic><topic>Circuit properties</topic><topic>CMOS</topic><topic>Code division multiple access</topic><topic>Communication switching</topic><topic>Complementary metal oxide seminconductor (CMOS) integrated circuits</topic><topic>Costs</topic><topic>Design. Technologies. Operation analysis. Testing</topic><topic>Electric, optical and optoelectronic circuits</topic><topic>Electronic circuits</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Filters</topic><topic>Insertion loss</topic><topic>Integrated circuits</topic><topic>Low noise</topic><topic>metal oxide semiconductor field effect transistor (MOSFET) switch</topic><topic>Metal oxide semiconductors</topic><topic>Microwaves</topic><topic>Multiaccess communication</topic><topic>Parasitic capacitance</topic><topic>Radio frequency</topic><topic>radio frequency (RF) switch</topic><topic>Resistors</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Switches</topic><topic>Switching circuits</topic><topic>Switching, multiplexing, switched capacity circuits</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kwangchun Jung</creatorcontrib><creatorcontrib>O, K.K.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE microwave and wireless components letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kwangchun Jung</au><au>O, K.K.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A CMOS single-pole-four-throw switch</atitle><jtitle>IEEE microwave and wireless components letters</jtitle><stitle>LMWC</stitle><date>2006-03-01</date><risdate>2006</risdate><volume>16</volume><issue>3</issue><spage>128</spage><epage>130</epage><pages>128-130</pages><issn>1531-1309</issn><issn>2771-957X</issn><eissn>1558-1764</eissn><eissn>2771-9588</eissn><coden>IMWCBJ</coden><abstract>An one-pole-four-throw switch that can be used to switch between the band select filters of four cellular bands and a single input programmable low noise amplifier has been demonstrated in a 0.18-mum complementary metal oxide semiconductor process. Its insertion losses are 0.39, 0.61, 0.66, and 0.75dB in the GSM900, DCS1800, PCS1900, and wide-band code division multiple access system bands. IIP3's of the switch are ~27dBm and isolations are greater than 22dB</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/LMWC.2005.869857</doi><tpages>3</tpages></addata></record> |
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| identifier | ISSN: 1531-1309 |
| ispartof | IEEE microwave and wireless components letters, 2006-03, Vol.16 (3), p.128-130 |
| issn | 1531-1309 2771-957X 1558-1764 2771-9588 |
| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | 1P4T switch Amplifiers Applied sciences Bands Circuit properties CMOS Code division multiple access Communication switching Complementary metal oxide seminconductor (CMOS) integrated circuits Costs Design. Technologies. Operation analysis. Testing Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology Filters Insertion loss Integrated circuits Low noise metal oxide semiconductor field effect transistor (MOSFET) switch Metal oxide semiconductors Microwaves Multiaccess communication Parasitic capacitance Radio frequency radio frequency (RF) switch Resistors Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Switches Switching circuits Switching, multiplexing, switched capacity circuits |
| title | A CMOS single-pole-four-throw switch |
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