Spin-torque diode effect in magnetic tunnel junctions
There is currently much interest in the development of 'spintronic' devices, in which harnessing the spins of electrons (rather than just their charges) is anticipated to provide new functionalities that go beyond those possible with conventional electronic devices. One widely studied exam...
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| Veröffentlicht in: | Nature 2005-11, Vol.438 (7066), p.339-342 |
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| creator | Tsunekawa, K Djayaprawira, D. D Kubota, H Suzuki, Y Maehara, H Yuasa, S Watanabe, N Tulapurkar, A. A Fukushima, A |
| description | There is currently much interest in the development of 'spintronic' devices, in which harnessing the spins of electrons (rather than just their charges) is anticipated to provide new functionalities that go beyond those possible with conventional electronic devices. One widely studied example of an effect that has its roots in the electron's spin degree of freedom is the torque exerted by a spin-polarized electric current on the spin moment of a nanometre-scale magnet. This torque causes the magnetic moment to rotate at potentially useful frequencies. Here we report a very different phenomenon that is also based on the interplay between spin dynamics and spin-dependent transport, and which arises from unusual diode behaviour. We show that the application of a small radio-frequency alternating current to a nanometre-scale magnetic tunnel junction can generate a measurable direct-current (d.c.) voltage across the device when the frequency is resonant with the spin oscillations that arise from the spin-torque effect: at resonance (which can be tuned by an external magnetic field), the structure exhibits different resistance states depending on the direction of the current. This behaviour is markedly different from that of a conventional semiconductor diode, and could form the basis of a nanometre-scale radio-frequency detector in telecommunication circuits. |
| doi_str_mv | 10.1038/nature04207 |
| format | Article |
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D ; Kubota, H ; Suzuki, Y ; Maehara, H ; Yuasa, S ; Watanabe, N ; Tulapurkar, A. A ; Fukushima, A</creator><creatorcontrib>Tsunekawa, K ; Djayaprawira, D. D ; Kubota, H ; Suzuki, Y ; Maehara, H ; Yuasa, S ; Watanabe, N ; Tulapurkar, A. A ; Fukushima, A</creatorcontrib><description>There is currently much interest in the development of 'spintronic' devices, in which harnessing the spins of electrons (rather than just their charges) is anticipated to provide new functionalities that go beyond those possible with conventional electronic devices. One widely studied example of an effect that has its roots in the electron's spin degree of freedom is the torque exerted by a spin-polarized electric current on the spin moment of a nanometre-scale magnet. This torque causes the magnetic moment to rotate at potentially useful frequencies. Here we report a very different phenomenon that is also based on the interplay between spin dynamics and spin-dependent transport, and which arises from unusual diode behaviour. We show that the application of a small radio-frequency alternating current to a nanometre-scale magnetic tunnel junction can generate a measurable direct-current (d.c.) voltage across the device when the frequency is resonant with the spin oscillations that arise from the spin-torque effect: at resonance (which can be tuned by an external magnetic field), the structure exhibits different resistance states depending on the direction of the current. This behaviour is markedly different from that of a conventional semiconductor diode, and could form the basis of a nanometre-scale radio-frequency detector in telecommunication circuits.</description><identifier>ISSN: 0028-0836</identifier><identifier>EISSN: 1476-4687</identifier><identifier>EISSN: 1476-4679</identifier><identifier>DOI: 10.1038/nature04207</identifier><identifier>PMID: 16292307</identifier><identifier>CODEN: NATUAS</identifier><language>eng</language><publisher>London: Nature Publishing</publisher><subject>Applied sciences ; Circuits ; Detectors ; Devices ; Diodes ; Electric potential ; Electromagnetism ; Electron spin ; Electronics ; Exact sciences and technology ; Ions ; Magnetic fields ; Magnetoelectric, magnetostrictive, magnetoacoustic, magnetooptic and magnetothermal devices. Spintronics ; Molecular electronics, nanoelectronics ; Oscillations ; Radio frequency ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Torque ; Tunnel junctions</subject><ispartof>Nature, 2005-11, Vol.438 (7066), p.339-342</ispartof><rights>2006 INIST-CNRS</rights><rights>COPYRIGHT 2005 Nature Publishing Group</rights><rights>Copyright Nature Publishing Group Nov 17, 2005</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c714t-6b525516eba1ce72c58c17ddf4b326ce2eb31c750e71d580bec9583a43c0f9c93</citedby><cites>FETCH-LOGICAL-c714t-6b525516eba1ce72c58c17ddf4b326ce2eb31c750e71d580bec9583a43c0f9c93</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>315,781,785,2728,27929,27930</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=17278379$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/16292307$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Tsunekawa, K</creatorcontrib><creatorcontrib>Djayaprawira, D. D</creatorcontrib><creatorcontrib>Kubota, H</creatorcontrib><creatorcontrib>Suzuki, Y</creatorcontrib><creatorcontrib>Maehara, H</creatorcontrib><creatorcontrib>Yuasa, S</creatorcontrib><creatorcontrib>Watanabe, N</creatorcontrib><creatorcontrib>Tulapurkar, A. A</creatorcontrib><creatorcontrib>Fukushima, A</creatorcontrib><title>Spin-torque diode effect in magnetic tunnel junctions</title><title>Nature</title><addtitle>Nature</addtitle><description>There is currently much interest in the development of 'spintronic' devices, in which harnessing the spins of electrons (rather than just their charges) is anticipated to provide new functionalities that go beyond those possible with conventional electronic devices. One widely studied example of an effect that has its roots in the electron's spin degree of freedom is the torque exerted by a spin-polarized electric current on the spin moment of a nanometre-scale magnet. This torque causes the magnetic moment to rotate at potentially useful frequencies. Here we report a very different phenomenon that is also based on the interplay between spin dynamics and spin-dependent transport, and which arises from unusual diode behaviour. We show that the application of a small radio-frequency alternating current to a nanometre-scale magnetic tunnel junction can generate a measurable direct-current (d.c.) voltage across the device when the frequency is resonant with the spin oscillations that arise from the spin-torque effect: at resonance (which can be tuned by an external magnetic field), the structure exhibits different resistance states depending on the direction of the current. This behaviour is markedly different from that of a conventional semiconductor diode, and could form the basis of a nanometre-scale radio-frequency detector in telecommunication circuits.</description><subject>Applied sciences</subject><subject>Circuits</subject><subject>Detectors</subject><subject>Devices</subject><subject>Diodes</subject><subject>Electric potential</subject><subject>Electromagnetism</subject><subject>Electron spin</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Ions</subject><subject>Magnetic fields</subject><subject>Magnetoelectric, magnetostrictive, magnetoacoustic, magnetooptic and magnetothermal devices. Spintronics</subject><subject>Molecular electronics, nanoelectronics</subject><subject>Oscillations</subject><subject>Radio frequency</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. 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Academic</collection><jtitle>Nature</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Tsunekawa, K</au><au>Djayaprawira, D. D</au><au>Kubota, H</au><au>Suzuki, Y</au><au>Maehara, H</au><au>Yuasa, S</au><au>Watanabe, N</au><au>Tulapurkar, A. A</au><au>Fukushima, A</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Spin-torque diode effect in magnetic tunnel junctions</atitle><jtitle>Nature</jtitle><addtitle>Nature</addtitle><date>2005-11-17</date><risdate>2005</risdate><volume>438</volume><issue>7066</issue><spage>339</spage><epage>342</epage><pages>339-342</pages><issn>0028-0836</issn><eissn>1476-4687</eissn><eissn>1476-4679</eissn><coden>NATUAS</coden><abstract>There is currently much interest in the development of 'spintronic' devices, in which harnessing the spins of electrons (rather than just their charges) is anticipated to provide new functionalities that go beyond those possible with conventional electronic devices. One widely studied example of an effect that has its roots in the electron's spin degree of freedom is the torque exerted by a spin-polarized electric current on the spin moment of a nanometre-scale magnet. This torque causes the magnetic moment to rotate at potentially useful frequencies. Here we report a very different phenomenon that is also based on the interplay between spin dynamics and spin-dependent transport, and which arises from unusual diode behaviour. We show that the application of a small radio-frequency alternating current to a nanometre-scale magnetic tunnel junction can generate a measurable direct-current (d.c.) voltage across the device when the frequency is resonant with the spin oscillations that arise from the spin-torque effect: at resonance (which can be tuned by an external magnetic field), the structure exhibits different resistance states depending on the direction of the current. This behaviour is markedly different from that of a conventional semiconductor diode, and could form the basis of a nanometre-scale radio-frequency detector in telecommunication circuits.</abstract><cop>London</cop><pub>Nature Publishing</pub><pmid>16292307</pmid><doi>10.1038/nature04207</doi><tpages>4</tpages><oa>free_for_read</oa></addata></record> |
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| ispartof | Nature, 2005-11, Vol.438 (7066), p.339-342 |
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| source | Nature Journals Online; Alma/SFX Local Collection |
| subjects | Applied sciences Circuits Detectors Devices Diodes Electric potential Electromagnetism Electron spin Electronics Exact sciences and technology Ions Magnetic fields Magnetoelectric, magnetostrictive, magnetoacoustic, magnetooptic and magnetothermal devices. Spintronics Molecular electronics, nanoelectronics Oscillations Radio frequency Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Torque Tunnel junctions |
| title | Spin-torque diode effect in magnetic tunnel junctions |
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