Cryogenic operation of third-generation, 200-GHz peak-f sub(T), silicon-germanium heterojunction bipolar transistors
We present a comprehensive investigation of the cryogenic performance of third-generation silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) technology. Measurements of the current-voltage (dc), small-signal ac, and broad-band noise characteristics of a 200-GHz SiGe HBT were made at 85...
Gespeichert in:
Veröffentlicht in: | IEEE transactions on electron devices 2005-01, Vol.52 (4) |
---|---|
Hauptverfasser: | , , , , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | 4 |
container_start_page | |
container_title | IEEE transactions on electron devices |
container_volume | 52 |
creator | Banerjee, B Venkataraman, S Lu, Yuan Liang, Qingqing Lee, Chang-Ho Nuttinck, S Heo, Dekhyuon Chen, Y-JE Cressler, J D Laskar, J Freeman, G Ahlgren, D C |
description | We present a comprehensive investigation of the cryogenic performance of third-generation silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) technology. Measurements of the current-voltage (dc), small-signal ac, and broad-band noise characteristics of a 200-GHz SiGe HBT were made at 85 K, 120 K, 150 K, 200 K, and 300 K. These devices show excellent behavior down to 85 K, maintaining reasonable dc ideality, with a peak current gain of 3800, a peak cut-off frequency (f sub(T)) of 260 GHz, a peak f sub(max) of 310 GHz, and a minimum noise figure (NF sub(min)) of approximately 0.30 dB at a frequency of 14 GHz, in all cases representing significant improvements over their corresponding values at 300 K. These results demonstrate that aggressively scaled SiGe HBTs are inherently well suited for cryogenic electronics applications requiring extreme levels of transistor performance. |
doi_str_mv | 10.1109/TED.2005.845078 |
format | Article |
fullrecord | <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_miscellaneous_896209431</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>896209431</sourcerecordid><originalsourceid>FETCH-proquest_miscellaneous_8962094313</originalsourceid><addsrcrecordid>eNqNjM1OwzAQhH0AqeXnzNU3QKqDnaTFOZeWPkDulZtu6BbHG7z2AZ6eCPUBOI1m5tMnxIPRhTG6eWk3b0Wp9bKw9VK_2isx19pY1VS2mokb5vNUV3VdzkVax2_6gICdpBGiS0hBUi_TCeNRTcdlW8jJp953P3IE96l6yfnw1D4vJKPHjsKExsEFzIM8QYJI5xy6P9kBR_IuyhRdYOREke_Ede88w_0lb8XjdtOud2qM9JWB035A7sB7F4Ay722zKnVTV6b6P_kLvvZUEw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>896209431</pqid></control><display><type>article</type><title>Cryogenic operation of third-generation, 200-GHz peak-f sub(T), silicon-germanium heterojunction bipolar transistors</title><source>IEEE Electronic Library (IEL)</source><creator>Banerjee, B ; Venkataraman, S ; Lu, Yuan ; Liang, Qingqing ; Lee, Chang-Ho ; Nuttinck, S ; Heo, Dekhyuon ; Chen, Y-JE ; Cressler, J D ; Laskar, J ; Freeman, G ; Ahlgren, D C</creator><creatorcontrib>Banerjee, B ; Venkataraman, S ; Lu, Yuan ; Liang, Qingqing ; Lee, Chang-Ho ; Nuttinck, S ; Heo, Dekhyuon ; Chen, Y-JE ; Cressler, J D ; Laskar, J ; Freeman, G ; Ahlgren, D C</creatorcontrib><description>We present a comprehensive investigation of the cryogenic performance of third-generation silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) technology. Measurements of the current-voltage (dc), small-signal ac, and broad-band noise characteristics of a 200-GHz SiGe HBT were made at 85 K, 120 K, 150 K, 200 K, and 300 K. These devices show excellent behavior down to 85 K, maintaining reasonable dc ideality, with a peak current gain of 3800, a peak cut-off frequency (f sub(T)) of 260 GHz, a peak f sub(max) of 310 GHz, and a minimum noise figure (NF sub(min)) of approximately 0.30 dB at a frequency of 14 GHz, in all cases representing significant improvements over their corresponding values at 300 K. These results demonstrate that aggressively scaled SiGe HBTs are inherently well suited for cryogenic electronics applications requiring extreme levels of transistor performance.</description><identifier>ISSN: 0018-9383</identifier><identifier>DOI: 10.1109/TED.2005.845078</identifier><language>eng</language><subject>Devices ; Direct current ; Electronics ; Heterojunction bipolar transistors ; Noise ; Noise levels ; Semiconductor devices ; Silicon germanides</subject><ispartof>IEEE transactions on electron devices, 2005-01, Vol.52 (4)</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>315,781,785,27928,27929</link.rule.ids></links><search><creatorcontrib>Banerjee, B</creatorcontrib><creatorcontrib>Venkataraman, S</creatorcontrib><creatorcontrib>Lu, Yuan</creatorcontrib><creatorcontrib>Liang, Qingqing</creatorcontrib><creatorcontrib>Lee, Chang-Ho</creatorcontrib><creatorcontrib>Nuttinck, S</creatorcontrib><creatorcontrib>Heo, Dekhyuon</creatorcontrib><creatorcontrib>Chen, Y-JE</creatorcontrib><creatorcontrib>Cressler, J D</creatorcontrib><creatorcontrib>Laskar, J</creatorcontrib><creatorcontrib>Freeman, G</creatorcontrib><creatorcontrib>Ahlgren, D C</creatorcontrib><title>Cryogenic operation of third-generation, 200-GHz peak-f sub(T), silicon-germanium heterojunction bipolar transistors</title><title>IEEE transactions on electron devices</title><description>We present a comprehensive investigation of the cryogenic performance of third-generation silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) technology. Measurements of the current-voltage (dc), small-signal ac, and broad-band noise characteristics of a 200-GHz SiGe HBT were made at 85 K, 120 K, 150 K, 200 K, and 300 K. These devices show excellent behavior down to 85 K, maintaining reasonable dc ideality, with a peak current gain of 3800, a peak cut-off frequency (f sub(T)) of 260 GHz, a peak f sub(max) of 310 GHz, and a minimum noise figure (NF sub(min)) of approximately 0.30 dB at a frequency of 14 GHz, in all cases representing significant improvements over their corresponding values at 300 K. These results demonstrate that aggressively scaled SiGe HBTs are inherently well suited for cryogenic electronics applications requiring extreme levels of transistor performance.</description><subject>Devices</subject><subject>Direct current</subject><subject>Electronics</subject><subject>Heterojunction bipolar transistors</subject><subject>Noise</subject><subject>Noise levels</subject><subject>Semiconductor devices</subject><subject>Silicon germanides</subject><issn>0018-9383</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><recordid>eNqNjM1OwzAQhH0AqeXnzNU3QKqDnaTFOZeWPkDulZtu6BbHG7z2AZ6eCPUBOI1m5tMnxIPRhTG6eWk3b0Wp9bKw9VK_2isx19pY1VS2mokb5vNUV3VdzkVax2_6gICdpBGiS0hBUi_TCeNRTcdlW8jJp953P3IE96l6yfnw1D4vJKPHjsKExsEFzIM8QYJI5xy6P9kBR_IuyhRdYOREke_Ede88w_0lb8XjdtOud2qM9JWB035A7sB7F4Ay722zKnVTV6b6P_kLvvZUEw</recordid><startdate>20050101</startdate><enddate>20050101</enddate><creator>Banerjee, B</creator><creator>Venkataraman, S</creator><creator>Lu, Yuan</creator><creator>Liang, Qingqing</creator><creator>Lee, Chang-Ho</creator><creator>Nuttinck, S</creator><creator>Heo, Dekhyuon</creator><creator>Chen, Y-JE</creator><creator>Cressler, J D</creator><creator>Laskar, J</creator><creator>Freeman, G</creator><creator>Ahlgren, D C</creator><scope>7SP</scope><scope>8FD</scope><scope>F28</scope><scope>FR3</scope><scope>L7M</scope></search><sort><creationdate>20050101</creationdate><title>Cryogenic operation of third-generation, 200-GHz peak-f sub(T), silicon-germanium heterojunction bipolar transistors</title><author>Banerjee, B ; Venkataraman, S ; Lu, Yuan ; Liang, Qingqing ; Lee, Chang-Ho ; Nuttinck, S ; Heo, Dekhyuon ; Chen, Y-JE ; Cressler, J D ; Laskar, J ; Freeman, G ; Ahlgren, D C</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-proquest_miscellaneous_8962094313</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><topic>Devices</topic><topic>Direct current</topic><topic>Electronics</topic><topic>Heterojunction bipolar transistors</topic><topic>Noise</topic><topic>Noise levels</topic><topic>Semiconductor devices</topic><topic>Silicon germanides</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Banerjee, B</creatorcontrib><creatorcontrib>Venkataraman, S</creatorcontrib><creatorcontrib>Lu, Yuan</creatorcontrib><creatorcontrib>Liang, Qingqing</creatorcontrib><creatorcontrib>Lee, Chang-Ho</creatorcontrib><creatorcontrib>Nuttinck, S</creatorcontrib><creatorcontrib>Heo, Dekhyuon</creatorcontrib><creatorcontrib>Chen, Y-JE</creatorcontrib><creatorcontrib>Cressler, J D</creatorcontrib><creatorcontrib>Laskar, J</creatorcontrib><creatorcontrib>Freeman, G</creatorcontrib><creatorcontrib>Ahlgren, D C</creatorcontrib><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Banerjee, B</au><au>Venkataraman, S</au><au>Lu, Yuan</au><au>Liang, Qingqing</au><au>Lee, Chang-Ho</au><au>Nuttinck, S</au><au>Heo, Dekhyuon</au><au>Chen, Y-JE</au><au>Cressler, J D</au><au>Laskar, J</au><au>Freeman, G</au><au>Ahlgren, D C</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Cryogenic operation of third-generation, 200-GHz peak-f sub(T), silicon-germanium heterojunction bipolar transistors</atitle><jtitle>IEEE transactions on electron devices</jtitle><date>2005-01-01</date><risdate>2005</risdate><volume>52</volume><issue>4</issue><issn>0018-9383</issn><abstract>We present a comprehensive investigation of the cryogenic performance of third-generation silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) technology. Measurements of the current-voltage (dc), small-signal ac, and broad-band noise characteristics of a 200-GHz SiGe HBT were made at 85 K, 120 K, 150 K, 200 K, and 300 K. These devices show excellent behavior down to 85 K, maintaining reasonable dc ideality, with a peak current gain of 3800, a peak cut-off frequency (f sub(T)) of 260 GHz, a peak f sub(max) of 310 GHz, and a minimum noise figure (NF sub(min)) of approximately 0.30 dB at a frequency of 14 GHz, in all cases representing significant improvements over their corresponding values at 300 K. These results demonstrate that aggressively scaled SiGe HBTs are inherently well suited for cryogenic electronics applications requiring extreme levels of transistor performance.</abstract><doi>10.1109/TED.2005.845078</doi></addata></record> |
fulltext | fulltext |
identifier | ISSN: 0018-9383 |
ispartof | IEEE transactions on electron devices, 2005-01, Vol.52 (4) |
issn | 0018-9383 |
language | eng |
recordid | cdi_proquest_miscellaneous_896209431 |
source | IEEE Electronic Library (IEL) |
subjects | Devices Direct current Electronics Heterojunction bipolar transistors Noise Noise levels Semiconductor devices Silicon germanides |
title | Cryogenic operation of third-generation, 200-GHz peak-f sub(T), silicon-germanium heterojunction bipolar transistors |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-16T23%3A16%3A07IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Cryogenic%20operation%20of%20third-generation,%20200-GHz%20peak-f%20sub(T),%20silicon-germanium%20heterojunction%20bipolar%20transistors&rft.jtitle=IEEE%20transactions%20on%20electron%20devices&rft.au=Banerjee,%20B&rft.date=2005-01-01&rft.volume=52&rft.issue=4&rft.issn=0018-9383&rft_id=info:doi/10.1109/TED.2005.845078&rft_dat=%3Cproquest%3E896209431%3C/proquest%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=896209431&rft_id=info:pmid/&rfr_iscdi=true |