Fourier transform infrared spectroscopy investigation of chemical bonding in low-k a-SiC:H thin films
Fourier Transform Infrared (FTIR) Spectroscopy has long been utilized as an analytical technique for qualitatively determining the presence of various different chemical bonds in gasses, liquids, solids, and on surfaces. Most recently, FTIR has been proven to be extremely useful for understanding th...
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| Veröffentlicht in: | Journal of non-crystalline solids 2011-07, Vol.357 (15), p.2970-2983 |
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| container_title | Journal of non-crystalline solids |
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| creator | King, S.W. French, M. Bielefeld, J. Lanford, W.A. |
| description | Fourier Transform Infrared (FTIR) Spectroscopy has long been utilized as an analytical technique for qualitatively determining the presence of various different chemical bonds in gasses, liquids, solids, and on surfaces. Most recently, FTIR has been proven to be extremely useful for understanding the different types of bonding present in low dielectric constant “low-k” organosilicate materials. These low-k materials are predominantly utilized in the nanoelectronics industry as the interlayer dielectric material in advanced Cu interconnect structures. In this article, we utilize FTIR to perform a detailed analysis of the changes in chemical bonding that occur in Plasma Enhanced Chemically Vapor Deposited (PECVD) low-k a-SiC:H thin films. PECVD low-k a-SiC:H materials are equally important in advanced Cu interconnects and are utilized as both etch stop and Cu diffusion barrier layers. We specifically investigate the changes that occur in low-k a-SiC:H films as the dielectric constant and mass density of these films are decreased from >7 to |
| doi_str_mv | 10.1016/j.jnoncrysol.2011.04.001 |
| format | Article |
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► Demonstration of both high (>7) and low (<3) k for a single material. ► Assignment of all key IR absorption bands in 3C-SiC and a-SiC:H. ► Correlation between SiC IR bands and crystalline versus amorphous structure. ► Clear observation of network bond percolation in SiC. ► Fabrication of porous a-SiC:H thin films.</description><identifier>ISSN: 0022-3093</identifier><identifier>EISSN: 1873-4812</identifier><identifier>DOI: 10.1016/j.jnoncrysol.2011.04.001</identifier><identifier>CODEN: JNCSBJ</identifier><language>eng</language><publisher>Oxford: Elsevier B.V</publisher><subject>Bonding ; Chemical vapor deposition ; Condensed matter: structure, mechanical and thermal properties ; Copper ; Density ; Dielectric constant ; Disordered solids ; Exact sciences and technology ; FTIR ; Glasses ; Lattice dynamics ; Low-k ; Nanostructure ; Networks ; Phenyls ; Physics ; Plasma ; Silicon carbide ; Structure and morphology; thickness ; Structure of solids and liquids; crystallography ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) ; Terminals ; Thin film structure and morphology ; Thin films ; Vibrational states in disordered systems</subject><ispartof>Journal of non-crystalline solids, 2011-07, Vol.357 (15), p.2970-2983</ispartof><rights>2011 Elsevier B.V.</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c413t-46b23708e6b21567aa464331949ee88a1f13a70c691ca5d9ea612aea4cd10ad93</citedby><cites>FETCH-LOGICAL-c413t-46b23708e6b21567aa464331949ee88a1f13a70c691ca5d9ea612aea4cd10ad93</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.jnoncrysol.2011.04.001$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3549,27923,27924,45994</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=24294289$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>King, S.W.</creatorcontrib><creatorcontrib>French, M.</creatorcontrib><creatorcontrib>Bielefeld, J.</creatorcontrib><creatorcontrib>Lanford, W.A.</creatorcontrib><title>Fourier transform infrared spectroscopy investigation of chemical bonding in low-k a-SiC:H thin films</title><title>Journal of non-crystalline solids</title><description>Fourier Transform Infrared (FTIR) Spectroscopy has long been utilized as an analytical technique for qualitatively determining the presence of various different chemical bonds in gasses, liquids, solids, and on surfaces. Most recently, FTIR has been proven to be extremely useful for understanding the different types of bonding present in low dielectric constant “low-k” organosilicate materials. These low-k materials are predominantly utilized in the nanoelectronics industry as the interlayer dielectric material in advanced Cu interconnect structures. In this article, we utilize FTIR to perform a detailed analysis of the changes in chemical bonding that occur in Plasma Enhanced Chemically Vapor Deposited (PECVD) low-k a-SiC:H thin films. PECVD low-k a-SiC:H materials are equally important in advanced Cu interconnects and are utilized as both etch stop and Cu diffusion barrier layers. We specifically investigate the changes that occur in low-k a-SiC:H films as the dielectric constant and mass density of these films are decreased from >7 to <3 and from 2.5 to 1g/cm3 respectively. We show that decreases in mass density and dielectric constant are accompanied by both an increase in terminal SiHx and CHx bonding and a decrease in SiC network bonding. At densities of 1.85g/cm3, the concentration of terminal SiHx bonding peaks and subsequent hydrogen incorporation are achieved predominantly via terminal CH3 groups. Low-k a-SiC:H films with k<3.5 and density <1.3g/cm3 can be achieved via incorporating larger organic phenyl groups but result in non-stoichiometric carbon rich films. Electron beam curing of these lower density a-SiC:H films results in volatilization of the phenyl groups leaving behind nanoporous regions and production of some CCC chain linkages in the network.
► Demonstration of both high (>7) and low (<3) k for a single material. ► Assignment of all key IR absorption bands in 3C-SiC and a-SiC:H. ► Correlation between SiC IR bands and crystalline versus amorphous structure. ► Clear observation of network bond percolation in SiC. ► Fabrication of porous a-SiC:H thin films.</description><subject>Bonding</subject><subject>Chemical vapor deposition</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Copper</subject><subject>Density</subject><subject>Dielectric constant</subject><subject>Disordered solids</subject><subject>Exact sciences and technology</subject><subject>FTIR</subject><subject>Glasses</subject><subject>Lattice dynamics</subject><subject>Low-k</subject><subject>Nanostructure</subject><subject>Networks</subject><subject>Phenyls</subject><subject>Physics</subject><subject>Plasma</subject><subject>Silicon carbide</subject><subject>Structure and morphology; thickness</subject><subject>Structure of solids and liquids; crystallography</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><subject>Terminals</subject><subject>Thin film structure and morphology</subject><subject>Thin films</subject><subject>Vibrational states in disordered systems</subject><issn>0022-3093</issn><issn>1873-4812</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNqFkUFv1DAQhS0EEsu2_8EXBJcEj-0kDjdYtRSpEofSszV1Jq2XxF7sbNH-e7zaCm7tXEYavZl5eh9jHEQNAtpP23obYnDpkONUSwFQC10LAa_YCkynKm1AvmYrIaSslOjVW_Yu560o1SmzYnQZ98lT4kvCkMeYZu7DmDDRwPOO3JJidnF3KNNHyou_x8XHwOPI3QPN3uHE72IYfLgvCj7FP9UvjtWN33y-4stDGY1-mvMZezPilOn8qa_Z7eXFz81Vdf3j2_fNl-vKaVBLpds7qTphqHRo2g5Rt1op6HVPZAzCCAo74doeHDZDT9iCRELtBhA49GrNPpzu7lL8vS9-7eyzo2nCQHGfrelbKZrjzTX7-KwS2g5k16imLVJzkrqSRU402l3yM6aDBWGPDOzW_mdgjwys0LYwKKvvn75gLlGVXIPz-d--1LLX0hx9fz3pqITzWHDY7DwFR4NPhYEdon_52V8BPKLn</recordid><startdate>20110715</startdate><enddate>20110715</enddate><creator>King, S.W.</creator><creator>French, M.</creator><creator>Bielefeld, J.</creator><creator>Lanford, W.A.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20110715</creationdate><title>Fourier transform infrared spectroscopy investigation of chemical bonding in low-k a-SiC:H thin films</title><author>King, S.W. ; French, M. ; Bielefeld, J. ; Lanford, W.A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c413t-46b23708e6b21567aa464331949ee88a1f13a70c691ca5d9ea612aea4cd10ad93</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Bonding</topic><topic>Chemical vapor deposition</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Copper</topic><topic>Density</topic><topic>Dielectric constant</topic><topic>Disordered solids</topic><topic>Exact sciences and technology</topic><topic>FTIR</topic><topic>Glasses</topic><topic>Lattice dynamics</topic><topic>Low-k</topic><topic>Nanostructure</topic><topic>Networks</topic><topic>Phenyls</topic><topic>Physics</topic><topic>Plasma</topic><topic>Silicon carbide</topic><topic>Structure and morphology; thickness</topic><topic>Structure of solids and liquids; crystallography</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><topic>Terminals</topic><topic>Thin film structure and morphology</topic><topic>Thin films</topic><topic>Vibrational states in disordered systems</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>King, S.W.</creatorcontrib><creatorcontrib>French, M.</creatorcontrib><creatorcontrib>Bielefeld, J.</creatorcontrib><creatorcontrib>Lanford, W.A.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of non-crystalline solids</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>King, S.W.</au><au>French, M.</au><au>Bielefeld, J.</au><au>Lanford, W.A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Fourier transform infrared spectroscopy investigation of chemical bonding in low-k a-SiC:H thin films</atitle><jtitle>Journal of non-crystalline solids</jtitle><date>2011-07-15</date><risdate>2011</risdate><volume>357</volume><issue>15</issue><spage>2970</spage><epage>2983</epage><pages>2970-2983</pages><issn>0022-3093</issn><eissn>1873-4812</eissn><coden>JNCSBJ</coden><abstract>Fourier Transform Infrared (FTIR) Spectroscopy has long been utilized as an analytical technique for qualitatively determining the presence of various different chemical bonds in gasses, liquids, solids, and on surfaces. Most recently, FTIR has been proven to be extremely useful for understanding the different types of bonding present in low dielectric constant “low-k” organosilicate materials. These low-k materials are predominantly utilized in the nanoelectronics industry as the interlayer dielectric material in advanced Cu interconnect structures. In this article, we utilize FTIR to perform a detailed analysis of the changes in chemical bonding that occur in Plasma Enhanced Chemically Vapor Deposited (PECVD) low-k a-SiC:H thin films. PECVD low-k a-SiC:H materials are equally important in advanced Cu interconnects and are utilized as both etch stop and Cu diffusion barrier layers. We specifically investigate the changes that occur in low-k a-SiC:H films as the dielectric constant and mass density of these films are decreased from >7 to <3 and from 2.5 to 1g/cm3 respectively. We show that decreases in mass density and dielectric constant are accompanied by both an increase in terminal SiHx and CHx bonding and a decrease in SiC network bonding. At densities of 1.85g/cm3, the concentration of terminal SiHx bonding peaks and subsequent hydrogen incorporation are achieved predominantly via terminal CH3 groups. Low-k a-SiC:H films with k<3.5 and density <1.3g/cm3 can be achieved via incorporating larger organic phenyl groups but result in non-stoichiometric carbon rich films. Electron beam curing of these lower density a-SiC:H films results in volatilization of the phenyl groups leaving behind nanoporous regions and production of some CCC chain linkages in the network.
► Demonstration of both high (>7) and low (<3) k for a single material. ► Assignment of all key IR absorption bands in 3C-SiC and a-SiC:H. ► Correlation between SiC IR bands and crystalline versus amorphous structure. ► Clear observation of network bond percolation in SiC. ► Fabrication of porous a-SiC:H thin films.</abstract><cop>Oxford</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jnoncrysol.2011.04.001</doi><tpages>14</tpages></addata></record> |
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| subjects | Bonding Chemical vapor deposition Condensed matter: structure, mechanical and thermal properties Copper Density Dielectric constant Disordered solids Exact sciences and technology FTIR Glasses Lattice dynamics Low-k Nanostructure Networks Phenyls Physics Plasma Silicon carbide Structure and morphology thickness Structure of solids and liquids crystallography Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Terminals Thin film structure and morphology Thin films Vibrational states in disordered systems |
| title | Fourier transform infrared spectroscopy investigation of chemical bonding in low-k a-SiC:H thin films |
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