Ultrafast floating 75-V lateral IGBT with a buried hole diverter and an effective junction isolation

A low-voltage lateral insulated gate bipolar transistor (IGBT) is proposed for junction-isolated smart power technologies. An effective suppression of the substrate current is obtained through the use of a double buried layer structure. This structure, with the buried layer of p-type (BLP) on top of...

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Veröffentlicht in:	IEEE electron device letters 2006-06, Vol.27 (6), p.492-494
Hauptverfasser:	Bakeroot, B., Doutreloigne, J., Moens, P.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Bipolar transistors Cathodes CMOS technology Crosstalk Devices Diverters Electrical engineering. Electrical power engineering Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Exact sciences and technology Floating structures Insulated gate bipolar transistor (IGBT) Insulated gate bipolar transistors Isolation technology junction-isolated technology Masks Other multijunction devices. Power transistors. Thyristors Power electronics, power supplies Power loss Power semiconductor devices Power semiconductor switches Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon on insulator technology Substrates Switching switching transient Transistors
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