Ultrafast floating 75-V lateral IGBT with a buried hole diverter and an effective junction isolation
A low-voltage lateral insulated gate bipolar transistor (IGBT) is proposed for junction-isolated smart power technologies. An effective suppression of the substrate current is obtained through the use of a double buried layer structure. This structure, with the buried layer of p-type (BLP) on top of...
Gespeichert in:
| Veröffentlicht in: | IEEE electron device letters 2006-06, Vol.27 (6), p.492-494 |
|---|---|
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 494 |
|---|---|
| container_issue | 6 |
| container_start_page | 492 |
| container_title | IEEE electron device letters |
| container_volume | 27 |
| creator | Bakeroot, B. Doutreloigne, J. Moens, P. |
| description | A low-voltage lateral insulated gate bipolar transistor (IGBT) is proposed for junction-isolated smart power technologies. An effective suppression of the substrate current is obtained through the use of a double buried layer structure. This structure, with the buried layer of p-type (BLP) on top of the buried layer of n-type, also ensures fast switching and a wide safe operating area as the BLP serves as a buried hole diverter in the on state and during turnoff. The floating capability of the device is also provided by the double buried layer. This lateral IGBT (LIGBT) is made in a standard smart power technology without adding extra masks. Due to the low power losses in the on state and during switching, this n-type LIGBT is competitive with n-type DMOS devices. |
| doi_str_mv | 10.1109/LED.2006.875146 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_proquest_miscellaneous_896202136</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1637567</ieee_id><sourcerecordid>28019113</sourcerecordid><originalsourceid>FETCH-LOGICAL-c381t-42a766f279a55845a711e52d528509709e5c91cf75812225501fff4f3fa8a61d3</originalsourceid><addsrcrecordid>eNp9kT1PHDEQhi2USFxIagoaCymh2sPj7y3DN9JJaSCtNeza4JPZBXuXKP8enw4JiYJi5NH4mXfseQnZB7YEYO3x6vxsyRnTS2sUSL1DFqCUbZjS4gtZMCOhEcD0LvlWypoxkNLIBelv05QxYJloSCNOcbinRjV_acLJZ0z0-vLkhv6L0wNFejfn6Hv6MCZP-_jic0UoDn0N6kPw3VSLdD0PNRkHGstYVWr2nXwNmIr_8XbukduL85vTq2b15_L69Peq6YSFqZEcjdaBmxbry6VCA-AV7xW3irWGtV51LXTBKAucc6UYhBBkEAEtaujFHjna6j7l8Xn2ZXKPsXQ-JRz8OBdnW80ZB6Er-etTklsGLYCo4OEHcD3Oeai_cC3wundrbIWOt1CXx1KyD-4px0fM_x0wtzHHVXPcxhy3Nad2_HyTxdJhChmHLpb3NmOl4GIz_mDLRe_9-7UWRmkjXgGh3pUi</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>912109878</pqid></control><display><type>article</type><title>Ultrafast floating 75-V lateral IGBT with a buried hole diverter and an effective junction isolation</title><source>IEEE Electronic Library (IEL)</source><creator>Bakeroot, B. ; Doutreloigne, J. ; Moens, P.</creator><creatorcontrib>Bakeroot, B. ; Doutreloigne, J. ; Moens, P.</creatorcontrib><description>A low-voltage lateral insulated gate bipolar transistor (IGBT) is proposed for junction-isolated smart power technologies. An effective suppression of the substrate current is obtained through the use of a double buried layer structure. This structure, with the buried layer of p-type (BLP) on top of the buried layer of n-type, also ensures fast switching and a wide safe operating area as the BLP serves as a buried hole diverter in the on state and during turnoff. The floating capability of the device is also provided by the double buried layer. This lateral IGBT (LIGBT) is made in a standard smart power technology without adding extra masks. Due to the low power losses in the on state and during switching, this n-type LIGBT is competitive with n-type DMOS devices.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2006.875146</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Bipolar transistors ; Cathodes ; CMOS technology ; Crosstalk ; Devices ; Diverters ; Electrical engineering. Electrical power engineering ; Electronic equipment and fabrication. Passive components, printed wiring boards, connectics ; Electronics ; Exact sciences and technology ; Floating structures ; Insulated gate bipolar transistor (IGBT) ; Insulated gate bipolar transistors ; Isolation technology ; junction-isolated technology ; Masks ; Other multijunction devices. Power transistors. Thyristors ; Power electronics, power supplies ; Power loss ; Power semiconductor devices ; Power semiconductor switches ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Silicon on insulator technology ; Substrates ; Switching ; switching transient ; Transistors</subject><ispartof>IEEE electron device letters, 2006-06, Vol.27 (6), p.492-494</ispartof><rights>2006 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2006</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c381t-42a766f279a55845a711e52d528509709e5c91cf75812225501fff4f3fa8a61d3</citedby><cites>FETCH-LOGICAL-c381t-42a766f279a55845a711e52d528509709e5c91cf75812225501fff4f3fa8a61d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1637567$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1637567$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=17843233$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Bakeroot, B.</creatorcontrib><creatorcontrib>Doutreloigne, J.</creatorcontrib><creatorcontrib>Moens, P.</creatorcontrib><title>Ultrafast floating 75-V lateral IGBT with a buried hole diverter and an effective junction isolation</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>A low-voltage lateral insulated gate bipolar transistor (IGBT) is proposed for junction-isolated smart power technologies. An effective suppression of the substrate current is obtained through the use of a double buried layer structure. This structure, with the buried layer of p-type (BLP) on top of the buried layer of n-type, also ensures fast switching and a wide safe operating area as the BLP serves as a buried hole diverter in the on state and during turnoff. The floating capability of the device is also provided by the double buried layer. This lateral IGBT (LIGBT) is made in a standard smart power technology without adding extra masks. Due to the low power losses in the on state and during switching, this n-type LIGBT is competitive with n-type DMOS devices.</description><subject>Applied sciences</subject><subject>Bipolar transistors</subject><subject>Cathodes</subject><subject>CMOS technology</subject><subject>Crosstalk</subject><subject>Devices</subject><subject>Diverters</subject><subject>Electrical engineering. Electrical power engineering</subject><subject>Electronic equipment and fabrication. Passive components, printed wiring boards, connectics</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Floating structures</subject><subject>Insulated gate bipolar transistor (IGBT)</subject><subject>Insulated gate bipolar transistors</subject><subject>Isolation technology</subject><subject>junction-isolated technology</subject><subject>Masks</subject><subject>Other multijunction devices. Power transistors. Thyristors</subject><subject>Power electronics, power supplies</subject><subject>Power loss</subject><subject>Power semiconductor devices</subject><subject>Power semiconductor switches</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Silicon on insulator technology</subject><subject>Substrates</subject><subject>Switching</subject><subject>switching transient</subject><subject>Transistors</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kT1PHDEQhi2USFxIagoaCymh2sPj7y3DN9JJaSCtNeza4JPZBXuXKP8enw4JiYJi5NH4mXfseQnZB7YEYO3x6vxsyRnTS2sUSL1DFqCUbZjS4gtZMCOhEcD0LvlWypoxkNLIBelv05QxYJloSCNOcbinRjV_acLJZ0z0-vLkhv6L0wNFejfn6Hv6MCZP-_jic0UoDn0N6kPw3VSLdD0PNRkHGstYVWr2nXwNmIr_8XbukduL85vTq2b15_L69Peq6YSFqZEcjdaBmxbry6VCA-AV7xW3irWGtV51LXTBKAucc6UYhBBkEAEtaujFHjna6j7l8Xn2ZXKPsXQ-JRz8OBdnW80ZB6Er-etTklsGLYCo4OEHcD3Oeai_cC3wundrbIWOt1CXx1KyD-4px0fM_x0wtzHHVXPcxhy3Nad2_HyTxdJhChmHLpb3NmOl4GIz_mDLRe_9-7UWRmkjXgGh3pUi</recordid><startdate>20060601</startdate><enddate>20060601</enddate><creator>Bakeroot, B.</creator><creator>Doutreloigne, J.</creator><creator>Moens, P.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20060601</creationdate><title>Ultrafast floating 75-V lateral IGBT with a buried hole diverter and an effective junction isolation</title><author>Bakeroot, B. ; Doutreloigne, J. ; Moens, P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c381t-42a766f279a55845a711e52d528509709e5c91cf75812225501fff4f3fa8a61d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2006</creationdate><topic>Applied sciences</topic><topic>Bipolar transistors</topic><topic>Cathodes</topic><topic>CMOS technology</topic><topic>Crosstalk</topic><topic>Devices</topic><topic>Diverters</topic><topic>Electrical engineering. Electrical power engineering</topic><topic>Electronic equipment and fabrication. Passive components, printed wiring boards, connectics</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Floating structures</topic><topic>Insulated gate bipolar transistor (IGBT)</topic><topic>Insulated gate bipolar transistors</topic><topic>Isolation technology</topic><topic>junction-isolated technology</topic><topic>Masks</topic><topic>Other multijunction devices. Power transistors. Thyristors</topic><topic>Power electronics, power supplies</topic><topic>Power loss</topic><topic>Power semiconductor devices</topic><topic>Power semiconductor switches</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Silicon on insulator technology</topic><topic>Substrates</topic><topic>Switching</topic><topic>switching transient</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Bakeroot, B.</creatorcontrib><creatorcontrib>Doutreloigne, J.</creatorcontrib><creatorcontrib>Moens, P.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Bakeroot, B.</au><au>Doutreloigne, J.</au><au>Moens, P.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Ultrafast floating 75-V lateral IGBT with a buried hole diverter and an effective junction isolation</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2006-06-01</date><risdate>2006</risdate><volume>27</volume><issue>6</issue><spage>492</spage><epage>494</epage><pages>492-494</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>A low-voltage lateral insulated gate bipolar transistor (IGBT) is proposed for junction-isolated smart power technologies. An effective suppression of the substrate current is obtained through the use of a double buried layer structure. This structure, with the buried layer of p-type (BLP) on top of the buried layer of n-type, also ensures fast switching and a wide safe operating area as the BLP serves as a buried hole diverter in the on state and during turnoff. The floating capability of the device is also provided by the double buried layer. This lateral IGBT (LIGBT) is made in a standard smart power technology without adding extra masks. Due to the low power losses in the on state and during switching, this n-type LIGBT is competitive with n-type DMOS devices.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/LED.2006.875146</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0741-3106 |
| ispartof | IEEE electron device letters, 2006-06, Vol.27 (6), p.492-494 |
| issn | 0741-3106 1558-0563 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_896202136 |
| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Bipolar transistors Cathodes CMOS technology Crosstalk Devices Diverters Electrical engineering. Electrical power engineering Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Exact sciences and technology Floating structures Insulated gate bipolar transistor (IGBT) Insulated gate bipolar transistors Isolation technology junction-isolated technology Masks Other multijunction devices. Power transistors. Thyristors Power electronics, power supplies Power loss Power semiconductor devices Power semiconductor switches Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon on insulator technology Substrates Switching switching transient Transistors |
| title | Ultrafast floating 75-V lateral IGBT with a buried hole diverter and an effective junction isolation |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-04T01%3A14%3A35IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Ultrafast%20floating%2075-V%20lateral%20IGBT%20with%20a%20buried%20hole%20diverter%20and%20an%20effective%20junction%20isolation&rft.jtitle=IEEE%20electron%20device%20letters&rft.au=Bakeroot,%20B.&rft.date=2006-06-01&rft.volume=27&rft.issue=6&rft.spage=492&rft.epage=494&rft.pages=492-494&rft.issn=0741-3106&rft.eissn=1558-0563&rft.coden=EDLEDZ&rft_id=info:doi/10.1109/LED.2006.875146&rft_dat=%3Cproquest_RIE%3E28019113%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=912109878&rft_id=info:pmid/&rft_ieee_id=1637567&rfr_iscdi=true |