Preparation and characterization of p-type hydrogenated amorphous silicon oxide film and its application to solar cell

Thin film wide band gap p-type hydrogenated amorphous silicon (a-Si) oxide (p-a-SiOx:H) materials were prepared at 175°C substrate temperature in a radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) and applied to the window layer of a-Si solar cell. We used nitrous oxide (N2O), hy...

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Veröffentlicht in:	Journal of non-crystalline solids 2011-07, Vol.357 (15), p.2826-2832
Hauptverfasser:	Yoon, Kichan, Kim, Youngkuk, Park, JinJoo, Shin, Chong Hoon, Baek, Seungshin, Jang, Juyeun, Iftiquar, S.M., Yi, Junsin
Format:	Artikel
Sprache:	eng
Schlagworte:	a-Si:H solar cell Amorphous silicon Applied sciences Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Cross-disciplinary physics: materials science rheology Defects Density Doped films Energy Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Natural energy Nitrous oxides Optical band gap Oxygen content p-a-SiOx:H film Photovoltaic cells Photovoltaic conversion Physics Solar cells Solar cells. Photoelectrochemical cells Solar energy Window layer
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