An analysis of temperature dependent current―voltage characteristics of Cu2O―ZnO heterojunction solar cells
Carrier transport and recombination mechanisms in Cu2O-ZnO heterojunction thin film solar cells were investigated through an analysis of their current-voltage characteristics in the dark and under various illumination intensities, as a function of temperature between 100K and 295K. The Cu2O-ZnO hete...
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| Veröffentlicht in: | Thin solid films 2011-07, Vol.519 (19), p.6613-6619 |
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| container_issue | 19 |
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| container_title | Thin solid films |
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| creator | JEONG, Seongho SANG HO SONG NAGAICH, Kushagra CAMPBELL, Stephen A AYDIL, Eray S |
| description | Carrier transport and recombination mechanisms in Cu2O-ZnO heterojunction thin film solar cells were investigated through an analysis of their current-voltage characteristics in the dark and under various illumination intensities, as a function of temperature between 100K and 295K. The Cu2O-ZnO heterojunction solar cells were prepared by metal organic chemical vapor deposition of Cu2O on ZnO films sputtered on transparent conducting oxide coated glass substrates. Activation energies extracted from the temperature dependence of the J-V characteristics reveals that interface recombination is the dominant carrier transport mechanism. Tunneling across an interfacial barrier also plays an important role in current flow and a thin TiO2 buffer layer reduces tunneling. A high open circuit voltage at low temperature (~0.9V at around 100K) indicates that Cu2O-ZnO heterojunction solar cells have high potential as solar cells if the recombination and tunneling at the interface can be suppressed at room temperature. |
| doi_str_mv | 10.1016/j.tsf.2011.04.241 |
| format | Article |
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The Cu2O-ZnO heterojunction solar cells were prepared by metal organic chemical vapor deposition of Cu2O on ZnO films sputtered on transparent conducting oxide coated glass substrates. Activation energies extracted from the temperature dependence of the J-V characteristics reveals that interface recombination is the dominant carrier transport mechanism. Tunneling across an interfacial barrier also plays an important role in current flow and a thin TiO2 buffer layer reduces tunneling. 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Photoelectrochemical cells ; Solar energy ; THIN FILMS ; TITANIUM DIOXIDE ; Tunneling ; VOLTAGE ; ZINC OXIDE</subject><ispartof>Thin solid films, 2011-07, Vol.519 (19), p.6613-6619</ispartof><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c307t-9f1609c1d1fcc0bbd128a58d3bf24212e953e30327f997803689f8791f7a9e7e3</citedby><cites>FETCH-LOGICAL-c307t-9f1609c1d1fcc0bbd128a58d3bf24212e953e30327f997803689f8791f7a9e7e3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=24302909$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>JEONG, Seongho</creatorcontrib><creatorcontrib>SANG HO SONG</creatorcontrib><creatorcontrib>NAGAICH, Kushagra</creatorcontrib><creatorcontrib>CAMPBELL, Stephen A</creatorcontrib><creatorcontrib>AYDIL, Eray S</creatorcontrib><title>An analysis of temperature dependent current―voltage characteristics of Cu2O―ZnO heterojunction solar cells</title><title>Thin solid films</title><description>Carrier transport and recombination mechanisms in Cu2O-ZnO heterojunction thin film solar cells were investigated through an analysis of their current-voltage characteristics in the dark and under various illumination intensities, as a function of temperature between 100K and 295K. The Cu2O-ZnO heterojunction solar cells were prepared by metal organic chemical vapor deposition of Cu2O on ZnO films sputtered on transparent conducting oxide coated glass substrates. Activation energies extracted from the temperature dependence of the J-V characteristics reveals that interface recombination is the dominant carrier transport mechanism. Tunneling across an interfacial barrier also plays an important role in current flow and a thin TiO2 buffer layer reduces tunneling. A high open circuit voltage at low temperature (~0.9V at around 100K) indicates that Cu2O-ZnO heterojunction solar cells have high potential as solar cells if the recombination and tunneling at the interface can be suppressed at room temperature.</description><subject>Applied sciences</subject><subject>Carrier transport</subject><subject>CHEMICAL VAPOR DEPOSITION</subject><subject>Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>COPPER OXIDE</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>CUPROUS OXIDE</subject><subject>Deposition by sputtering</subject><subject>Electrical properties of specific thin films</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Energy</subject><subject>Exact sciences and technology</subject><subject>Heterojunctions</subject><subject>INTERFACES</subject><subject>Materials science</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Natural energy</subject><subject>Open circuit voltage</subject><subject>Photovoltaic cells</subject><subject>Photovoltaic conversion</subject><subject>Physics</subject><subject>SOLAR CELLS</subject><subject>Solar cells. Photoelectrochemical cells</subject><subject>Solar energy</subject><subject>THIN FILMS</subject><subject>TITANIUM DIOXIDE</subject><subject>Tunneling</subject><subject>VOLTAGE</subject><subject>ZINC OXIDE</subject><issn>0040-6090</issn><issn>1879-2731</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNo9kLFuGzEQRInABiLL-YB0bAJXd9klT3fH0hAcJ4AANUmThqB4y-iEEymTPAPu8hP-QX-JqdhINcXODGYfY58RagRsvx7qnFwtALGGphYNfmAL7DtViU7iBVsANFC1oOAju0rpAAAohFywcOu58WZ6SmPiwfFMxxNFk-dIfKAT-YF85naOsejL3-fHMGXzh7jdm2hspjimPNp_0fUstsXx22_5nsolHGZv8xg8T2EykVuapnTNLp2ZEn161yX79e3u5_p7tdne_1jfbiorocuVcljGWhzQWQu73YCiN6t-kDsnGoGC1EqSBCk6p1TXg2x75cq76DqjqCO5ZDdvvacYHmZKWR_HdF5gPIU56V61qFZNqVkyfHPaGFKK5PQpjkcTnzSCPrPVB13Y6jNbDY0ubEvmy3u7SdZMLhpvx_Q_KBoJQoGSr55-fk8</recordid><startdate>20110729</startdate><enddate>20110729</enddate><creator>JEONG, Seongho</creator><creator>SANG HO SONG</creator><creator>NAGAICH, Kushagra</creator><creator>CAMPBELL, Stephen A</creator><creator>AYDIL, Eray S</creator><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>H8G</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20110729</creationdate><title>An analysis of temperature dependent current―voltage characteristics of Cu2O―ZnO heterojunction solar cells</title><author>JEONG, Seongho ; SANG HO SONG ; NAGAICH, Kushagra ; CAMPBELL, Stephen A ; AYDIL, Eray S</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c307t-9f1609c1d1fcc0bbd128a58d3bf24212e953e30327f997803689f8791f7a9e7e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Applied sciences</topic><topic>Carrier transport</topic><topic>CHEMICAL VAPOR DEPOSITION</topic><topic>Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>COPPER OXIDE</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>CUPROUS OXIDE</topic><topic>Deposition by sputtering</topic><topic>Electrical properties of specific thin films</topic><topic>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</topic><topic>Energy</topic><topic>Exact sciences and technology</topic><topic>Heterojunctions</topic><topic>INTERFACES</topic><topic>Materials science</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Natural energy</topic><topic>Open circuit voltage</topic><topic>Photovoltaic cells</topic><topic>Photovoltaic conversion</topic><topic>Physics</topic><topic>SOLAR CELLS</topic><topic>Solar cells. Photoelectrochemical cells</topic><topic>Solar energy</topic><topic>THIN FILMS</topic><topic>TITANIUM DIOXIDE</topic><topic>Tunneling</topic><topic>VOLTAGE</topic><topic>ZINC OXIDE</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>JEONG, Seongho</creatorcontrib><creatorcontrib>SANG HO SONG</creatorcontrib><creatorcontrib>NAGAICH, Kushagra</creatorcontrib><creatorcontrib>CAMPBELL, Stephen A</creatorcontrib><creatorcontrib>AYDIL, Eray S</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Copper Technical Reference Library</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Thin solid films</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>JEONG, Seongho</au><au>SANG HO SONG</au><au>NAGAICH, Kushagra</au><au>CAMPBELL, Stephen A</au><au>AYDIL, Eray S</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>An analysis of temperature dependent current―voltage characteristics of Cu2O―ZnO heterojunction solar cells</atitle><jtitle>Thin solid films</jtitle><date>2011-07-29</date><risdate>2011</risdate><volume>519</volume><issue>19</issue><spage>6613</spage><epage>6619</epage><pages>6613-6619</pages><issn>0040-6090</issn><eissn>1879-2731</eissn><coden>THSFAP</coden><abstract>Carrier transport and recombination mechanisms in Cu2O-ZnO heterojunction thin film solar cells were investigated through an analysis of their current-voltage characteristics in the dark and under various illumination intensities, as a function of temperature between 100K and 295K. The Cu2O-ZnO heterojunction solar cells were prepared by metal organic chemical vapor deposition of Cu2O on ZnO films sputtered on transparent conducting oxide coated glass substrates. Activation energies extracted from the temperature dependence of the J-V characteristics reveals that interface recombination is the dominant carrier transport mechanism. Tunneling across an interfacial barrier also plays an important role in current flow and a thin TiO2 buffer layer reduces tunneling. A high open circuit voltage at low temperature (~0.9V at around 100K) indicates that Cu2O-ZnO heterojunction solar cells have high potential as solar cells if the recombination and tunneling at the interface can be suppressed at room temperature.</abstract><cop>Amsterdam</cop><pub>Elsevier</pub><doi>10.1016/j.tsf.2011.04.241</doi><tpages>7</tpages></addata></record> |
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| subjects | Applied sciences Carrier transport CHEMICAL VAPOR DEPOSITION Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Condensed matter: electronic structure, electrical, magnetic, and optical properties COPPER OXIDE Cross-disciplinary physics: materials science rheology CUPROUS OXIDE Deposition by sputtering Electrical properties of specific thin films Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Energy Exact sciences and technology Heterojunctions INTERFACES Materials science Methods of deposition of films and coatings film growth and epitaxy Natural energy Open circuit voltage Photovoltaic cells Photovoltaic conversion Physics SOLAR CELLS Solar cells. Photoelectrochemical cells Solar energy THIN FILMS TITANIUM DIOXIDE Tunneling VOLTAGE ZINC OXIDE |
| title | An analysis of temperature dependent current―voltage characteristics of Cu2O―ZnO heterojunction solar cells |
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