Hydrogen etching of Si3N4 layers with plasma assisted hot wire CVD
In order to develop sustainable processes for clean manufacturing environment for thin film or other solar cell production, we studied the hydrogen etching of silicon nitride (Si3N4) films on flat crystalline silicon (c-Silicon) substrates. With an arrangement primarily constructed for hot wire CVD...
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| Veröffentlicht in: | Thin solid films 2011-05, Vol.519 (14), p.4582-4584 |
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| container_issue | 14 |
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| container_title | Thin solid films |
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| creator | KNIFFLER, Norbert PFLUEGER, Andrea SCHULZ, Tobias SOMMER, Sven SCHROEDER, Bernd |
| description | In order to develop sustainable processes for clean manufacturing environment for thin film or other solar cell production, we studied the hydrogen etching of silicon nitride (Si3N4) films on flat crystalline silicon (c-Silicon) substrates. With an arrangement primarily constructed for hot wire CVD (HWCVD) deposition of thin silicon films also cleaning processes with atomic hydrogen were studied with a simplified three wire assembly. The three filaments could be biased independently by different potential. A variation of hydrogen pressure and flow was performed to find out conditions of high etching rates for the Si3N4 layers. The etching rate was simply determined by measuring the time for total removal of the film, since this could be easily detected by the change of the anti-reflection property. Etching rates of 0.1nm/s have been obtained under 15Pa and a flow of 50sccm. An intensive study was carried out of the direct current (DC) plasma hot wire CVD conditions. |
| doi_str_mv | 10.1016/j.tsf.2011.01.324 |
| format | Article |
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With an arrangement primarily constructed for hot wire CVD (HWCVD) deposition of thin silicon films also cleaning processes with atomic hydrogen were studied with a simplified three wire assembly. The three filaments could be biased independently by different potential. A variation of hydrogen pressure and flow was performed to find out conditions of high etching rates for the Si3N4 layers. The etching rate was simply determined by measuring the time for total removal of the film, since this could be easily detected by the change of the anti-reflection property. Etching rates of 0.1nm/s have been obtained under 15Pa and a flow of 50sccm. An intensive study was carried out of the direct current (DC) plasma hot wire CVD conditions.</description><identifier>ISSN: 0040-6090</identifier><identifier>EISSN: 1879-2731</identifier><identifier>DOI: 10.1016/j.tsf.2011.01.324</identifier><identifier>CODEN: THSFAP</identifier><language>eng</language><publisher>Amsterdam: Elsevier</publisher><subject>Applied sciences ; Chemical vapor deposition ; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) ; Cleaning ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Cross-disciplinary physics: materials science; rheology ; Direct current ; Electrical properties of specific thin films ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Energy ; Etching ; Exact sciences and technology ; Materials science ; Methods of deposition of films and coatings; film growth and epitaxy ; Natural energy ; Photovoltaic conversion ; Physics ; Physics of gases, plasmas and electric discharges ; Physics of plasmas and electric discharges ; Plasma applications ; Silicon nitride ; Silicon substrates ; Solar cells. 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An intensive study was carried out of the direct current (DC) plasma hot wire CVD conditions.</description><subject>Applied sciences</subject><subject>Chemical vapor deposition</subject><subject>Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)</subject><subject>Cleaning</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Direct current</subject><subject>Electrical properties of specific thin films</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Energy</subject><subject>Etching</subject><subject>Exact sciences and technology</subject><subject>Materials science</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Natural energy</subject><subject>Photovoltaic conversion</subject><subject>Physics</subject><subject>Physics of gases, plasmas and electric discharges</subject><subject>Physics of plasmas and electric discharges</subject><subject>Plasma applications</subject><subject>Silicon nitride</subject><subject>Silicon substrates</subject><subject>Solar cells. 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With an arrangement primarily constructed for hot wire CVD (HWCVD) deposition of thin silicon films also cleaning processes with atomic hydrogen were studied with a simplified three wire assembly. The three filaments could be biased independently by different potential. A variation of hydrogen pressure and flow was performed to find out conditions of high etching rates for the Si3N4 layers. The etching rate was simply determined by measuring the time for total removal of the film, since this could be easily detected by the change of the anti-reflection property. Etching rates of 0.1nm/s have been obtained under 15Pa and a flow of 50sccm. An intensive study was carried out of the direct current (DC) plasma hot wire CVD conditions.</abstract><cop>Amsterdam</cop><pub>Elsevier</pub><doi>10.1016/j.tsf.2011.01.324</doi><tpages>3</tpages></addata></record> |
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| source | Elsevier ScienceDirect Journals |
| subjects | Applied sciences Chemical vapor deposition Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Cleaning Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Direct current Electrical properties of specific thin films Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Energy Etching Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Natural energy Photovoltaic conversion Physics Physics of gases, plasmas and electric discharges Physics of plasmas and electric discharges Plasma applications Silicon nitride Silicon substrates Solar cells. Photoelectrochemical cells Solar energy Thin films Wire |
| title | Hydrogen etching of Si3N4 layers with plasma assisted hot wire CVD |
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