Epitaxial graphene top-gate FETs on silicon substrates

This paper reports preparation of top-gate epitaxial graphene FETs (EGFETs) on silicon substrates. Epitaxial graphene is obtained from a thermal decomposition at the surface of a 3C–SiC layer grown on Si substrates. We provide the first demonstration and comparison of the EGFETs fabricated on Si(1 1...

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Veröffentlicht in:	Solid-state electronics 2010-10, Vol.54 (10), p.1071-1075
Hauptverfasser:	Kang, Hyun-Chul, Karasawa, Hiromi, Miyamoto, Yu, Handa, Hiroyuki, Fukidome, Hirokazu, Suemitsu, Tetsuya, Suemitsu, Maki, Otsuji, Taiichi
Format:	Artikel
Sprache:	eng
Schlagworte:	Channels Contact resistance Electronics Epitaxial growth Epitaxy FET Graphene Modulation Sheet resistance Silicon Silicon substrates Voltage
Online-Zugang:	Volltext
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