Epitaxial graphene top-gate FETs on silicon substrates
This paper reports preparation of top-gate epitaxial graphene FETs (EGFETs) on silicon substrates. Epitaxial graphene is obtained from a thermal decomposition at the surface of a 3C–SiC layer grown on Si substrates. We provide the first demonstration and comparison of the EGFETs fabricated on Si(1 1...
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| Veröffentlicht in: | Solid-state electronics 2010-10, Vol.54 (10), p.1071-1075 |
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| container_end_page | 1075 |
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| container_issue | 10 |
| container_start_page | 1071 |
| container_title | Solid-state electronics |
| container_volume | 54 |
| creator | Kang, Hyun-Chul Karasawa, Hiromi Miyamoto, Yu Handa, Hiroyuki Fukidome, Hirokazu Suemitsu, Tetsuya Suemitsu, Maki Otsuji, Taiichi |
| description | This paper reports preparation of top-gate epitaxial graphene FETs (EGFETs) on silicon substrates. Epitaxial graphene is obtained from a thermal decomposition at the surface of a 3C–SiC layer grown on Si substrates. We provide the first demonstration and comparison of the EGFETs fabricated on Si(1
1
0) and Si(1
1
1) substrates. For all EGFETs, an n-type transistor operation is observed by the gate voltage modulation. We find that the Si(1
1
1) substrates give better flatness at the surface of the 3C–SiC layer. As a result, the EGFETs fabricated on Si(1
1
1) substrates exhibit higher channel currents than those on Si(1
1
0) substrates. |
| doi_str_mv | 10.1016/j.sse.2010.05.030 |
| format | Article |
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1
0) and Si(1
1
1) substrates. For all EGFETs, an n-type transistor operation is observed by the gate voltage modulation. We find that the Si(1
1
1) substrates give better flatness at the surface of the 3C–SiC layer. As a result, the EGFETs fabricated on Si(1
1
1) substrates exhibit higher channel currents than those on Si(1
1
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1
0) and Si(1
1
1) substrates. For all EGFETs, an n-type transistor operation is observed by the gate voltage modulation. We find that the Si(1
1
1) substrates give better flatness at the surface of the 3C–SiC layer. As a result, the EGFETs fabricated on Si(1
1
1) substrates exhibit higher channel currents than those on Si(1
1
0) substrates.</description><subject>Channels</subject><subject>Contact resistance</subject><subject>Electronics</subject><subject>Epitaxial growth</subject><subject>Epitaxy</subject><subject>FET</subject><subject>Graphene</subject><subject>Modulation</subject><subject>Sheet resistance</subject><subject>Silicon</subject><subject>Silicon substrates</subject><subject>Voltage</subject><issn>0038-1101</issn><issn>1879-2405</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNp9kM1OwzAQhC0EEqXwANxy45SwdmLHFidU8SdV4gJny3E3xVWaBG-K4O1xFc6cRqP9ZqUZxq45FBy4ut0VRFgISB5kASWcsAXXtclFBfKULQBKnfOEnrMLoh0ACMVhwdTDGCb3HVyXbaMbP7DHbBrGfOsmzB4f3igb-oxCF_xRDw1NMV3okp21riO8-tMle0_w6jlfvz69rO7XuS-NnPKmbXXNXSlNYzai4t4p16LBWhvpQddVLYUCIVrwigstXCV0I-pKIyjZQl0u2c38d4zD5wFpsvtAHrvO9TgcyGqjuJGpbiL5TPo4EEVs7RjD3sUfy8EeJ7I7myayx4ksSDtn7uYMpgpfAaMlH7D3uAkR_WQ3Q_gn_QvPo2zy</recordid><startdate>20101001</startdate><enddate>20101001</enddate><creator>Kang, Hyun-Chul</creator><creator>Karasawa, Hiromi</creator><creator>Miyamoto, Yu</creator><creator>Handa, Hiroyuki</creator><creator>Fukidome, Hirokazu</creator><creator>Suemitsu, Tetsuya</creator><creator>Suemitsu, Maki</creator><creator>Otsuji, Taiichi</creator><general>Elsevier Ltd</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20101001</creationdate><title>Epitaxial graphene top-gate FETs on silicon substrates</title><author>Kang, Hyun-Chul ; Karasawa, Hiromi ; Miyamoto, Yu ; Handa, Hiroyuki ; Fukidome, Hirokazu ; Suemitsu, Tetsuya ; Suemitsu, Maki ; Otsuji, Taiichi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c395t-bff871a359b9d241ca6afe9e7895c08747526022f0c61282a428b2748e065f073</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Channels</topic><topic>Contact resistance</topic><topic>Electronics</topic><topic>Epitaxial growth</topic><topic>Epitaxy</topic><topic>FET</topic><topic>Graphene</topic><topic>Modulation</topic><topic>Sheet resistance</topic><topic>Silicon</topic><topic>Silicon substrates</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kang, Hyun-Chul</creatorcontrib><creatorcontrib>Karasawa, Hiromi</creatorcontrib><creatorcontrib>Miyamoto, Yu</creatorcontrib><creatorcontrib>Handa, Hiroyuki</creatorcontrib><creatorcontrib>Fukidome, Hirokazu</creatorcontrib><creatorcontrib>Suemitsu, Tetsuya</creatorcontrib><creatorcontrib>Suemitsu, Maki</creatorcontrib><creatorcontrib>Otsuji, Taiichi</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Solid-state electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kang, Hyun-Chul</au><au>Karasawa, Hiromi</au><au>Miyamoto, Yu</au><au>Handa, Hiroyuki</au><au>Fukidome, Hirokazu</au><au>Suemitsu, Tetsuya</au><au>Suemitsu, Maki</au><au>Otsuji, Taiichi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Epitaxial graphene top-gate FETs on silicon substrates</atitle><jtitle>Solid-state electronics</jtitle><date>2010-10-01</date><risdate>2010</risdate><volume>54</volume><issue>10</issue><spage>1071</spage><epage>1075</epage><pages>1071-1075</pages><issn>0038-1101</issn><eissn>1879-2405</eissn><abstract>This paper reports preparation of top-gate epitaxial graphene FETs (EGFETs) on silicon substrates. Epitaxial graphene is obtained from a thermal decomposition at the surface of a 3C–SiC layer grown on Si substrates. We provide the first demonstration and comparison of the EGFETs fabricated on Si(1
1
0) and Si(1
1
1) substrates. For all EGFETs, an n-type transistor operation is observed by the gate voltage modulation. We find that the Si(1
1
1) substrates give better flatness at the surface of the 3C–SiC layer. As a result, the EGFETs fabricated on Si(1
1
1) substrates exhibit higher channel currents than those on Si(1
1
0) substrates.</abstract><pub>Elsevier Ltd</pub><doi>10.1016/j.sse.2010.05.030</doi><tpages>5</tpages></addata></record> |
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| language | eng |
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| source | Elsevier ScienceDirect Journals |
| subjects | Channels Contact resistance Electronics Epitaxial growth Epitaxy FET Graphene Modulation Sheet resistance Silicon Silicon substrates Voltage |
| title | Epitaxial graphene top-gate FETs on silicon substrates |
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