Integrated interconnect networks for RF switch matrix applications
In this paper, two new types of integrated RF interconnect networks are presented. The circuits are printed on double-sided alumina substrates, eliminating the need to use multilayer manufacturing technology. The interconnect networks employ finite ground coplanar lines and vertical transitions and...
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| Veröffentlicht in: | IEEE transactions on microwave theory and techniques 2005-01, Vol.53 (1), p.12-21 |
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| container_title | IEEE transactions on microwave theory and techniques |
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| creator | Daneshmand, M. Mansour, R.R. Mousavi, P. Savio Choi Yassini, B. Zybura, A. Ming Yu |
| description | In this paper, two new types of integrated RF interconnect networks are presented. The circuits are printed on double-sided alumina substrates, eliminating the need to use multilayer manufacturing technology. The interconnect networks employ finite ground coplanar lines and vertical transitions and can be easily integrated with semiconductor and microelectromechanical-systems switches. A wide-band 3/spl times/3 interconnect network utilizing single and double three-via vertical transitions is investigated theoretically and experimentally. The measured results show a return loss of -20dB and an isolation of better than -40dB up to 30 GHz. A vialess double-sided interconnect network is also studied and optimized for satellite Ku-band applications. This type of interconnect network uses a process requiring only front and back pattern metallization. The measured results indicate a return loss of better than -17dB and an isolation of better than -45dB. |
| doi_str_mv | 10.1109/TMTT.2004.839893 |
| format | Article |
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The circuits are printed on double-sided alumina substrates, eliminating the need to use multilayer manufacturing technology. The interconnect networks employ finite ground coplanar lines and vertical transitions and can be easily integrated with semiconductor and microelectromechanical-systems switches. A wide-band 3/spl times/3 interconnect network utilizing single and double three-via vertical transitions is investigated theoretically and experimentally. The measured results show a return loss of -20dB and an isolation of better than -40dB up to 30 GHz. A vialess double-sided interconnect network is also studied and optimized for satellite Ku-band applications. This type of interconnect network uses a process requiring only front and back pattern metallization. The measured results indicate a return loss of better than -17dB and an isolation of better than -45dB.</description><identifier>ISSN: 0018-9480</identifier><identifier>EISSN: 1557-9670</identifier><identifier>DOI: 10.1109/TMTT.2004.839893</identifier><identifier>CODEN: IETMAB</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Aluminum oxide ; Applied sciences ; Circuit properties ; Electric, optical and optoelectronic circuits ; Electronics ; Exact sciences and technology ; Integrated circuit interconnections ; Integrated circuit technology ; Isolation technology ; Loss measurement ; Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits ; Microwave integrated circuits (MICs) ; Microwaves ; Multilayers ; Networks ; Nonhomogeneous media ; Radio frequencies ; Radio frequency ; Semiconductor device manufacture ; Semiconductors ; Substrates ; switch matrix interconnect network ; Switches ; Switching theory ; Transmission line matrix methods</subject><ispartof>IEEE transactions on microwave theory and techniques, 2005-01, Vol.53 (1), p.12-21</ispartof><rights>2005 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2005</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c352t-6c62c29507bd9c84d8fa39784bdf00112b411de4c8ed6c1506cdf069c90639293</citedby><cites>FETCH-LOGICAL-c352t-6c62c29507bd9c84d8fa39784bdf00112b411de4c8ed6c1506cdf069c90639293</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1381671$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,314,776,780,785,786,792,4036,4037,23909,23910,25118,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1381671$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=16449561$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Daneshmand, M.</creatorcontrib><creatorcontrib>Mansour, R.R.</creatorcontrib><creatorcontrib>Mousavi, P.</creatorcontrib><creatorcontrib>Savio Choi</creatorcontrib><creatorcontrib>Yassini, B.</creatorcontrib><creatorcontrib>Zybura, A.</creatorcontrib><creatorcontrib>Ming Yu</creatorcontrib><title>Integrated interconnect networks for RF switch matrix applications</title><title>IEEE transactions on microwave theory and techniques</title><addtitle>TMTT</addtitle><description>In this paper, two new types of integrated RF interconnect networks are presented. 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The measured results indicate a return loss of better than -17dB and an isolation of better than -45dB.</description><subject>Aluminum oxide</subject><subject>Applied sciences</subject><subject>Circuit properties</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Integrated circuit interconnections</subject><subject>Integrated circuit technology</subject><subject>Isolation technology</subject><subject>Loss measurement</subject><subject>Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits</subject><subject>Microwave integrated circuits (MICs)</subject><subject>Microwaves</subject><subject>Multilayers</subject><subject>Networks</subject><subject>Nonhomogeneous media</subject><subject>Radio frequencies</subject><subject>Radio frequency</subject><subject>Semiconductor device manufacture</subject><subject>Semiconductors</subject><subject>Substrates</subject><subject>switch matrix interconnect network</subject><subject>Switches</subject><subject>Switching theory</subject><subject>Transmission line matrix methods</subject><issn>0018-9480</issn><issn>1557-9670</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkN1LwzAUxYMoOKfvgi9FEJ8689U0edThdDARpD6HLE01s0tnkjH9703pYODTvZfzu4fDAeASwQlCUNxVL1U1wRDSCSeCC3IERqgoylywEh6DEYSI54JyeArOQlilkxaQj8DD3EXz4VU0dWbT6nXnnNExcybuOv8Vsqbz2dssCzsb9We2VtHbn0xtNq3VKtrOhXNw0qg2mIv9HIP32WM1fc4Xr0_z6f0i16TAMWeaYY1FActlLTSnNW8UESWny7pJcRBeUoRqQzU3NdOogEwngQktICMCCzIGt4PvxnffWxOiXNugTdsqZ7ptkFwwJAiGOJHX_8hVt_UuhZOclZSRsuzt4ABp34XgTSM33q6V_5UIyr5S2Vcq-0rlUGl6udn7qqBV23jltA2HP0apKBhK3NXAWWPMQSYcsRKRPzUtfqQ</recordid><startdate>200501</startdate><enddate>200501</enddate><creator>Daneshmand, M.</creator><creator>Mansour, R.R.</creator><creator>Mousavi, P.</creator><creator>Savio Choi</creator><creator>Yassini, B.</creator><creator>Zybura, A.</creator><creator>Ming Yu</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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The circuits are printed on double-sided alumina substrates, eliminating the need to use multilayer manufacturing technology. The interconnect networks employ finite ground coplanar lines and vertical transitions and can be easily integrated with semiconductor and microelectromechanical-systems switches. A wide-band 3/spl times/3 interconnect network utilizing single and double three-via vertical transitions is investigated theoretically and experimentally. The measured results show a return loss of -20dB and an isolation of better than -40dB up to 30 GHz. A vialess double-sided interconnect network is also studied and optimized for satellite Ku-band applications. This type of interconnect network uses a process requiring only front and back pattern metallization. The measured results indicate a return loss of better than -17dB and an isolation of better than -45dB.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TMTT.2004.839893</doi><tpages>10</tpages></addata></record> |
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| ispartof | IEEE transactions on microwave theory and techniques, 2005-01, Vol.53 (1), p.12-21 |
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| source | IEEE Electronic Library (IEL) |
| subjects | Aluminum oxide Applied sciences Circuit properties Electric, optical and optoelectronic circuits Electronics Exact sciences and technology Integrated circuit interconnections Integrated circuit technology Isolation technology Loss measurement Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits Microwave integrated circuits (MICs) Microwaves Multilayers Networks Nonhomogeneous media Radio frequencies Radio frequency Semiconductor device manufacture Semiconductors Substrates switch matrix interconnect network Switches Switching theory Transmission line matrix methods |
| title | Integrated interconnect networks for RF switch matrix applications |
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