Influence of MgO and ZrO2 buffer layers on dielectric properties of Ba(Zr0.20Ti0.80)O3 thin films prepared by sol–gel processing

▶ A modified sol–gel process was used to prepare BZT thin films. ▶ Orientation of BZT films can be tailored by using MgO and ZrO2 buffer layers. ▶ High FOM and low leakage current density were achieved in BZT films with buffer layers. Ba(Zr0.20Ti0.80)O3 (BZT) thin films are deposited on Pt(111)/Ti/SiO2/Si, MgO and ZrO2 buffered Pt(111)/Ti/SiO2/Si substrates by a sol–gel process. The BZT thin films directly grown on Pt(111)/Ti/SiO2/Si substrates exhibit highly (111) preferred orientation, while the films deposited on Pt(111)/Ti/SiO2/Si substrates with MgO and ZrO2 buffer layers show highly (110) preferred orientation. At 100kHz, dielectric constants are 417, 311 and 321 for the BZT thin films grown on Pt(111)/Ti/SiO2/Si, MgO and ZrO2 buffered Pt(111)/Ti/SiO2/Si substrates, respectively. The difference in dielectric properties of three BZT films can be attributed to the series capacitance effect, interface conditions and their orientations.