10-gb/s operation of an In/sub 0.53/Ga/sub 0.47/As p-i-n photodiode on metamorphic InGaP buffered semi-insulating GaAs substrate

The SONET OC-192 receiving performance of In 0.53 Ga 0.47 As p-i-n photodiode grown on linearly graded metamorphic In x Ga 1-x P buffered GaAs substrate is reported. With a low-cost TO-46 package, such a device exhibits a frequency bandwidth up to 8 GHz, a bit-error rate (BER) of 10 -9 at 10 Gb/s, a...

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