Customized drive electronics to extend silicon optical modulators to 4 gb/s

The data transmission bandwidth of a metal oxide semiconductor (MOS) capacitor Si optical modulator is extended from 1 to 4 Gb/s through the introduction of custom-designed low-impedance drive circuitry. Two distinct drive circuits were produced and tested-the first targeting 2.5 Gb/s data rate and...

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Veröffentlicht in:	Journal of lightwave technology 2005-12, Vol.23 (12), p.4305-4314
Hauptverfasser:	Samara-Rubio, D., Keil, U.D., Ling Liao, Franck, T., Ansheng Liu, Hodge, D.W., Rubin, D., Cohen, R.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Bandwidth BiCMOS integrated circuits Circuit properties Circuit testing Construction Data communication Drives Electric, optical and optoelectronic circuits Electronics Erbium Exact sciences and technology Extinction ratio Integrated optics. Optical fibers and wave guides intensity modulation Metal oxide semiconductors Modulators MOS capacitors Noise levels Optical and optoelectronic circuits Optical modulation optical waveguides Silicon Swing Systems, networks and services of telecommunications Telecommunications Telecommunications and information theory Transmission and modulation (techniques and equipments) Voltage
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