Customized drive electronics to extend silicon optical modulators to 4 gb/s
The data transmission bandwidth of a metal oxide semiconductor (MOS) capacitor Si optical modulator is extended from 1 to 4 Gb/s through the introduction of custom-designed low-impedance drive circuitry. Two distinct drive circuits were produced and tested-the first targeting 2.5 Gb/s data rate and...
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| Veröffentlicht in: | Journal of lightwave technology 2005-12, Vol.23 (12), p.4305-4314 |
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| container_end_page | 4314 |
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| container_issue | 12 |
| container_start_page | 4305 |
| container_title | Journal of lightwave technology |
| container_volume | 23 |
| creator | Samara-Rubio, D. Keil, U.D. Ling Liao Franck, T. Ansheng Liu Hodge, D.W. Rubin, D. Cohen, R. |
| description | The data transmission bandwidth of a metal oxide semiconductor (MOS) capacitor Si optical modulator is extended from 1 to 4 Gb/s through the introduction of custom-designed low-impedance drive circuitry. Two distinct drive circuits were produced and tested-the first targeting 2.5 Gb/s data rate and 3 dB extinction ratio (ER), and the second having reduced voltage swing (1.3 V single-ended swing) while achieving an open eye at 4 Gb/s. The speed, power, and ER data collected are used to build a quantitative discussion of the challenges in achieving a power-efficient free-carrier modulator at bit rates above 1 Gb/s. |
| doi_str_mv | 10.1109/JLT.2005.859405 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_proquest_miscellaneous_896172878</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1566759</ieee_id><sourcerecordid>1671249733</sourcerecordid><originalsourceid>FETCH-LOGICAL-c383t-2d8ba78f5df2c624f2d15c6cd75695622ba31576647cdfbc2356b69958ab61743</originalsourceid><addsrcrecordid>eNp90TtLBDEQB_AgCp6P2sJmEUSbvcv7Ucrh-8BG65BNshLZ25zJrqif3pwnCBZWKeY3E2b-ABwhOEUIqtnd4nGKIWRTyRSFbAtMEGOyxhiRbTCBgpBaCkx3wV7OLxAiSqWYgPv5mIe4DJ_eVS6FN1_5ztshxT7YXA2x8u-D712VQxds7Ku4GoI1XbWMbuzMENM3otVzM8sHYKc1XfaHP-8-eLq6fJzf1IuH69v5xaK2RJKhxk42RsiWuRZbjmmLHWKWWycYV4xj3BiCmOCcCuvaxmLCeMOVYtI0HAlK9sHZZu4qxdfR50EvQ7a-60zv45i1VIVhKWSR5_9KxAXCVJXbFHryh77EMfVlDy25QphRtP55tkE2xZyTb_UqhaVJHxpBvU5BlxT0OgW9SaF0nP6MNbncrU2mtyH_tglSFsWquOONC9773zLjXDBFvgDrCY5q</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>869125414</pqid></control><display><type>article</type><title>Customized drive electronics to extend silicon optical modulators to 4 gb/s</title><source>IEEE/IET Electronic Library (IEL)</source><creator>Samara-Rubio, D. ; Keil, U.D. ; Ling Liao ; Franck, T. ; Ansheng Liu ; Hodge, D.W. ; Rubin, D. ; Cohen, R.</creator><creatorcontrib>Samara-Rubio, D. ; Keil, U.D. ; Ling Liao ; Franck, T. ; Ansheng Liu ; Hodge, D.W. ; Rubin, D. ; Cohen, R.</creatorcontrib><description>The data transmission bandwidth of a metal oxide semiconductor (MOS) capacitor Si optical modulator is extended from 1 to 4 Gb/s through the introduction of custom-designed low-impedance drive circuitry. Two distinct drive circuits were produced and tested-the first targeting 2.5 Gb/s data rate and 3 dB extinction ratio (ER), and the second having reduced voltage swing (1.3 V single-ended swing) while achieving an open eye at 4 Gb/s. The speed, power, and ER data collected are used to build a quantitative discussion of the challenges in achieving a power-efficient free-carrier modulator at bit rates above 1 Gb/s.</description><identifier>ISSN: 0733-8724</identifier><identifier>EISSN: 1558-2213</identifier><identifier>DOI: 10.1109/JLT.2005.859405</identifier><identifier>CODEN: JLTEDG</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Bandwidth ; BiCMOS integrated circuits ; Circuit properties ; Circuit testing ; Construction ; Data communication ; Drives ; Electric, optical and optoelectronic circuits ; Electronics ; Erbium ; Exact sciences and technology ; Extinction ratio ; Integrated optics. Optical fibers and wave guides ; intensity modulation ; Metal oxide semiconductors ; Modulators ; MOS capacitors ; Noise levels ; Optical and optoelectronic circuits ; Optical modulation ; optical waveguides ; Silicon ; Swing ; Systems, networks and services of telecommunications ; Telecommunications ; Telecommunications and information theory ; Transmission and modulation (techniques and equipments) ; Voltage</subject><ispartof>Journal of lightwave technology, 2005-12, Vol.23 (12), p.4305-4314</ispartof><rights>2006 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2005</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c383t-2d8ba78f5df2c624f2d15c6cd75695622ba31576647cdfbc2356b69958ab61743</citedby><cites>FETCH-LOGICAL-c383t-2d8ba78f5df2c624f2d15c6cd75695622ba31576647cdfbc2356b69958ab61743</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1566759$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1566759$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=17376629$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Samara-Rubio, D.</creatorcontrib><creatorcontrib>Keil, U.D.</creatorcontrib><creatorcontrib>Ling Liao</creatorcontrib><creatorcontrib>Franck, T.</creatorcontrib><creatorcontrib>Ansheng Liu</creatorcontrib><creatorcontrib>Hodge, D.W.</creatorcontrib><creatorcontrib>Rubin, D.</creatorcontrib><creatorcontrib>Cohen, R.</creatorcontrib><title>Customized drive electronics to extend silicon optical modulators to 4 gb/s</title><title>Journal of lightwave technology</title><addtitle>JLT</addtitle><description>The data transmission bandwidth of a metal oxide semiconductor (MOS) capacitor Si optical modulator is extended from 1 to 4 Gb/s through the introduction of custom-designed low-impedance drive circuitry. Two distinct drive circuits were produced and tested-the first targeting 2.5 Gb/s data rate and 3 dB extinction ratio (ER), and the second having reduced voltage swing (1.3 V single-ended swing) while achieving an open eye at 4 Gb/s. The speed, power, and ER data collected are used to build a quantitative discussion of the challenges in achieving a power-efficient free-carrier modulator at bit rates above 1 Gb/s.</description><subject>Applied sciences</subject><subject>Bandwidth</subject><subject>BiCMOS integrated circuits</subject><subject>Circuit properties</subject><subject>Circuit testing</subject><subject>Construction</subject><subject>Data communication</subject><subject>Drives</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronics</subject><subject>Erbium</subject><subject>Exact sciences and technology</subject><subject>Extinction ratio</subject><subject>Integrated optics. Optical fibers and wave guides</subject><subject>intensity modulation</subject><subject>Metal oxide semiconductors</subject><subject>Modulators</subject><subject>MOS capacitors</subject><subject>Noise levels</subject><subject>Optical and optoelectronic circuits</subject><subject>Optical modulation</subject><subject>optical waveguides</subject><subject>Silicon</subject><subject>Swing</subject><subject>Systems, networks and services of telecommunications</subject><subject>Telecommunications</subject><subject>Telecommunications and information theory</subject><subject>Transmission and modulation (techniques and equipments)</subject><subject>Voltage</subject><issn>0733-8724</issn><issn>1558-2213</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp90TtLBDEQB_AgCp6P2sJmEUSbvcv7Ucrh-8BG65BNshLZ25zJrqif3pwnCBZWKeY3E2b-ABwhOEUIqtnd4nGKIWRTyRSFbAtMEGOyxhiRbTCBgpBaCkx3wV7OLxAiSqWYgPv5mIe4DJ_eVS6FN1_5ztshxT7YXA2x8u-D712VQxds7Ku4GoI1XbWMbuzMENM3otVzM8sHYKc1XfaHP-8-eLq6fJzf1IuH69v5xaK2RJKhxk42RsiWuRZbjmmLHWKWWycYV4xj3BiCmOCcCuvaxmLCeMOVYtI0HAlK9sHZZu4qxdfR50EvQ7a-60zv45i1VIVhKWSR5_9KxAXCVJXbFHryh77EMfVlDy25QphRtP55tkE2xZyTb_UqhaVJHxpBvU5BlxT0OgW9SaF0nP6MNbncrU2mtyH_tglSFsWquOONC9773zLjXDBFvgDrCY5q</recordid><startdate>20051201</startdate><enddate>20051201</enddate><creator>Samara-Rubio, D.</creator><creator>Keil, U.D.</creator><creator>Ling Liao</creator><creator>Franck, T.</creator><creator>Ansheng Liu</creator><creator>Hodge, D.W.</creator><creator>Rubin, D.</creator><creator>Cohen, R.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>FR3</scope><scope>KR7</scope></search><sort><creationdate>20051201</creationdate><title>Customized drive electronics to extend silicon optical modulators to 4 gb/s</title><author>Samara-Rubio, D. ; Keil, U.D. ; Ling Liao ; Franck, T. ; Ansheng Liu ; Hodge, D.W. ; Rubin, D. ; Cohen, R.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c383t-2d8ba78f5df2c624f2d15c6cd75695622ba31576647cdfbc2356b69958ab61743</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><topic>Applied sciences</topic><topic>Bandwidth</topic><topic>BiCMOS integrated circuits</topic><topic>Circuit properties</topic><topic>Circuit testing</topic><topic>Construction</topic><topic>Data communication</topic><topic>Drives</topic><topic>Electric, optical and optoelectronic circuits</topic><topic>Electronics</topic><topic>Erbium</topic><topic>Exact sciences and technology</topic><topic>Extinction ratio</topic><topic>Integrated optics. Optical fibers and wave guides</topic><topic>intensity modulation</topic><topic>Metal oxide semiconductors</topic><topic>Modulators</topic><topic>MOS capacitors</topic><topic>Noise levels</topic><topic>Optical and optoelectronic circuits</topic><topic>Optical modulation</topic><topic>optical waveguides</topic><topic>Silicon</topic><topic>Swing</topic><topic>Systems, networks and services of telecommunications</topic><topic>Telecommunications</topic><topic>Telecommunications and information theory</topic><topic>Transmission and modulation (techniques and equipments)</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Samara-Rubio, D.</creatorcontrib><creatorcontrib>Keil, U.D.</creatorcontrib><creatorcontrib>Ling Liao</creatorcontrib><creatorcontrib>Franck, T.</creatorcontrib><creatorcontrib>Ansheng Liu</creatorcontrib><creatorcontrib>Hodge, D.W.</creatorcontrib><creatorcontrib>Rubin, D.</creatorcontrib><creatorcontrib>Cohen, R.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE/IET Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Engineering Research Database</collection><collection>Civil Engineering Abstracts</collection><jtitle>Journal of lightwave technology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Samara-Rubio, D.</au><au>Keil, U.D.</au><au>Ling Liao</au><au>Franck, T.</au><au>Ansheng Liu</au><au>Hodge, D.W.</au><au>Rubin, D.</au><au>Cohen, R.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Customized drive electronics to extend silicon optical modulators to 4 gb/s</atitle><jtitle>Journal of lightwave technology</jtitle><stitle>JLT</stitle><date>2005-12-01</date><risdate>2005</risdate><volume>23</volume><issue>12</issue><spage>4305</spage><epage>4314</epage><pages>4305-4314</pages><issn>0733-8724</issn><eissn>1558-2213</eissn><coden>JLTEDG</coden><abstract>The data transmission bandwidth of a metal oxide semiconductor (MOS) capacitor Si optical modulator is extended from 1 to 4 Gb/s through the introduction of custom-designed low-impedance drive circuitry. Two distinct drive circuits were produced and tested-the first targeting 2.5 Gb/s data rate and 3 dB extinction ratio (ER), and the second having reduced voltage swing (1.3 V single-ended swing) while achieving an open eye at 4 Gb/s. The speed, power, and ER data collected are used to build a quantitative discussion of the challenges in achieving a power-efficient free-carrier modulator at bit rates above 1 Gb/s.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/JLT.2005.859405</doi><tpages>10</tpages></addata></record> |
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| subjects | Applied sciences Bandwidth BiCMOS integrated circuits Circuit properties Circuit testing Construction Data communication Drives Electric, optical and optoelectronic circuits Electronics Erbium Exact sciences and technology Extinction ratio Integrated optics. Optical fibers and wave guides intensity modulation Metal oxide semiconductors Modulators MOS capacitors Noise levels Optical and optoelectronic circuits Optical modulation optical waveguides Silicon Swing Systems, networks and services of telecommunications Telecommunications Telecommunications and information theory Transmission and modulation (techniques and equipments) Voltage |
| title | Customized drive electronics to extend silicon optical modulators to 4 gb/s |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-04T19%3A09%3A20IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Customized%20drive%20electronics%20to%20extend%20silicon%20optical%20modulators%20to%204%20gb/s&rft.jtitle=Journal%20of%20lightwave%20technology&rft.au=Samara-Rubio,%20D.&rft.date=2005-12-01&rft.volume=23&rft.issue=12&rft.spage=4305&rft.epage=4314&rft.pages=4305-4314&rft.issn=0733-8724&rft.eissn=1558-2213&rft.coden=JLTEDG&rft_id=info:doi/10.1109/JLT.2005.859405&rft_dat=%3Cproquest_RIE%3E1671249733%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=869125414&rft_id=info:pmid/&rft_ieee_id=1566759&rfr_iscdi=true |