High Gain and Fast Detection of Warfare Agents Using Back-Gated Silicon-Nanowired MOSFETs

The top-down fabrication of doped p-type silicon-nanowired (NW) arrays and their application as gas detectors is presented. After surface functionalization with 3-(4-ethynylbenzyl)-1, 5, 7-trimethyl-3-azabicyclo [3.3.1] nonane-7-methanol molecules, the wires were subjected to an organophosphorous si...

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Veröffentlicht in:	IEEE electron device letters 2011-07, Vol.32 (7), p.976-978
Hauptverfasser:	Passi, V., Ravaux, F., Dubois, E., Clavaguera, S., Carella, A., Celle, C., Simonato, J-P, Silvestri, L., Reggiani, S., Vuillaume, D., Raskin, J-P
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Arrays Condensed Matter Cross-disciplinary physics: materials science rheology Current measurement Electronics Exact sciences and technology Gain Gas detection Gas detectors General equipment and techniques Instruments, apparatus, components and techniques common to several branches of physics and astronomy Materials science metal-oxide-semiconductor field-effect transistors (MOSFETs) MOSFETs Nanobioscience Nanocomposites Nanomaterials Nanoscale materials and structures: fabrication and characterization Nanostructure Nanowires Other topics in nanoscale materials and structures Physics Quantum wires Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Sensitivity Sensors (chemical, optical, electrical, movement, gas, etc.) remote sensing Silicon silicon nanowires (NWs) silicon surface functionalization Substrates Surface treatment Transistors Wire
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