Dislocation reduction in GaN film using Ga-lean GaN buffer layer and migration enhanced epitaxy

A GaN buffer layer grown under Ga-lean conditions by plasma-assisted molecular beam epitaxy (PAMBE) was used to reduce the dislocation density in a GaN film grown on a sapphire substrate. The Ga-lean buffer, with inclined trench walls on its surface, provided an effective way to bend the propagation...

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