Performance and reliability of poly-Si TFTs on FSG buffer layer

A novel and process-compatible scheme for fabricating poly-Si thin-film transistors (TFTs) on an FSG buffer layer was proposed and demonstrated. Experimental results reveal that remarkably improved device performance and uniformity can be achieved with appropriate fluorine concentration. The poly-Si...

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Veröffentlicht in:	IEEE electron device letters 2005-07, Vol.26 (7), p.467-469
Hauptverfasser:	Wang, Shen De, Chang, Tzu Yun, Chien, Chao Hsin, Lo, Wei Hsiang, Sang, Jen Yi, Lee, Jam Wen, Lei, Tan Fu
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Atomic layer deposition Buffer layer Buffer layers Chaos Chemical vapor deposition Devices Electronics Exact sciences and technology fluorinated silicate oxide (FSG) Fluorine Glass Grain boundaries Leakage current polycrystalline silicon thin-film transistors (poly-Si TFTs) reliability Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon Stress concentration Substrates Thin film transistors Transistors Variability
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