Performance and reliability of poly-Si TFTs on FSG buffer layer
A novel and process-compatible scheme for fabricating poly-Si thin-film transistors (TFTs) on an FSG buffer layer was proposed and demonstrated. Experimental results reveal that remarkably improved device performance and uniformity can be achieved with appropriate fluorine concentration. The poly-Si...
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| Veröffentlicht in: | IEEE electron device letters 2005-07, Vol.26 (7), p.467-469 |
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| container_end_page | 469 |
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| container_issue | 7 |
| container_start_page | 467 |
| container_title | IEEE electron device letters |
| container_volume | 26 |
| creator | Wang, Shen De Chang, Tzu Yun Chien, Chao Hsin Lo, Wei Hsiang Sang, Jen Yi Lee, Jam Wen Lei, Tan Fu |
| description | A novel and process-compatible scheme for fabricating poly-Si thin-film transistors (TFTs) on an FSG buffer layer was proposed and demonstrated. Experimental results reveal that remarkably improved device performance and uniformity can be achieved with appropriate fluorine concentration. The poly-Si TFTs fabricated on FSG layers have a higher on-current, a lower leakage current, and a higher field-effect mobility compared with the conventional poly-Si TFTs. Furthermore, the incorporation of fluorine also increased the reliability of poly-Si TFTs against hot carrier stressing, which is attributed to the formation of Si-F bonds. |
| doi_str_mv | 10.1109/LED.2005.851242 |
| format | Article |
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Experimental results reveal that remarkably improved device performance and uniformity can be achieved with appropriate fluorine concentration. The poly-Si TFTs fabricated on FSG layers have a higher on-current, a lower leakage current, and a higher field-effect mobility compared with the conventional poly-Si TFTs. Furthermore, the incorporation of fluorine also increased the reliability of poly-Si TFTs against hot carrier stressing, which is attributed to the formation of Si-F bonds.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2005.851242</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Atomic layer deposition ; Buffer layer ; Buffer layers ; Chaos ; Chemical vapor deposition ; Devices ; Electronics ; Exact sciences and technology ; fluorinated silicate oxide (FSG) ; Fluorine ; Glass ; Grain boundaries ; Leakage current ; polycrystalline silicon thin-film transistors (poly-Si TFTs) ; reliability ; Semiconductor devices ; Semiconductor electronics. Microelectronics. Optoelectronics. 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Experimental results reveal that remarkably improved device performance and uniformity can be achieved with appropriate fluorine concentration. The poly-Si TFTs fabricated on FSG layers have a higher on-current, a lower leakage current, and a higher field-effect mobility compared with the conventional poly-Si TFTs. Furthermore, the incorporation of fluorine also increased the reliability of poly-Si TFTs against hot carrier stressing, which is attributed to the formation of Si-F bonds.</description><subject>Applied sciences</subject><subject>Atomic layer deposition</subject><subject>Buffer layer</subject><subject>Buffer layers</subject><subject>Chaos</subject><subject>Chemical vapor deposition</subject><subject>Devices</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>fluorinated silicate oxide (FSG)</subject><subject>Fluorine</subject><subject>Glass</subject><subject>Grain boundaries</subject><subject>Leakage current</subject><subject>polycrystalline silicon thin-film transistors (poly-Si TFTs)</subject><subject>reliability</subject><subject>Semiconductor devices</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. 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| ispartof | IEEE electron device letters, 2005-07, Vol.26 (7), p.467-469 |
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| subjects | Applied sciences Atomic layer deposition Buffer layer Buffer layers Chaos Chemical vapor deposition Devices Electronics Exact sciences and technology fluorinated silicate oxide (FSG) Fluorine Glass Grain boundaries Leakage current polycrystalline silicon thin-film transistors (poly-Si TFTs) reliability Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon Stress concentration Substrates Thin film transistors Transistors Variability |
| title | Performance and reliability of poly-Si TFTs on FSG buffer layer |
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