p-Type Conduction Characteristics of Lithium-Doped ZnO Nanowires

p‐type ZnO nanowires (NWs) based on a simple hydrothermal technique with a lithium dopant are demonstrated. It is demonstrated that Li substitution of Zn occurrs because of thermally induced migration due to post‐annealing in the presence of oxygen. The stable formation of p‐type ZnO:Li NWs is revea...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Weinheim) 2011-09, Vol.23 (36), p.4183-4187
Hauptverfasser: Lee, JunSeok, Cha, SeungNam, Kim, JongMin, Nam, HyeWon, Lee, SangHyo, Ko, WonBae, Wang, Kang L., Park, JeaGun, Hong, JinPyo
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:p‐type ZnO nanowires (NWs) based on a simple hydrothermal technique with a lithium dopant are demonstrated. It is demonstrated that Li substitution of Zn occurrs because of thermally induced migration due to post‐annealing in the presence of oxygen. The stable formation of p‐type ZnO:Li NWs is revealed using a NW field‐effect transistor and a simple n‐type ZnO thin film/p‐type annealed ZnO:Li NW homojunction diode.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201101376