p-Type Conduction Characteristics of Lithium-Doped ZnO Nanowires
p‐type ZnO nanowires (NWs) based on a simple hydrothermal technique with a lithium dopant are demonstrated. It is demonstrated that Li substitution of Zn occurrs because of thermally induced migration due to post‐annealing in the presence of oxygen. The stable formation of p‐type ZnO:Li NWs is revea...
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Veröffentlicht in: | Advanced materials (Weinheim) 2011-09, Vol.23 (36), p.4183-4187 |
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Hauptverfasser: | , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | p‐type ZnO nanowires (NWs) based on a simple hydrothermal technique with a lithium dopant are demonstrated. It is demonstrated that Li substitution of Zn occurrs because of thermally induced migration due to post‐annealing in the presence of oxygen. The stable formation of p‐type ZnO:Li NWs is revealed using a NW field‐effect transistor and a simple n‐type ZnO thin film/p‐type annealed ZnO:Li NW homojunction diode. |
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ISSN: | 0935-9648 1521-4095 |
DOI: | 10.1002/adma.201101376 |