Effect of the crystallinity of MOCVD-grown ZnO:N on the diffusion of impurities
The solubility of nitrogen in ZnO films grown at various temperatures by metalorganic chemical vapor deposition, using NO as both oxygen and nitrogen sources, was investigated. ZnO films were grown at 270, 310 and 370 °C, and subsequently annealed in oxygen at either 700 or 850 °C. In addition to ni...
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| Veröffentlicht in: | Journal of crystal growth 2011-06, Vol.324 (1), p.243-247 |
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| creator | Dangbégnon, J.K. Talla, K. Vines, L. Botha, J.R. |
| description | The solubility of nitrogen in ZnO films grown at various temperatures by metalorganic chemical vapor deposition, using NO as both oxygen and nitrogen sources, was investigated. ZnO films were grown at 270, 310 and 370
°C, and subsequently annealed in oxygen at either 700 or 850
°C. In addition to nitrogen, hydrogen and carbon were also present in the samples. The presence of these impurities is partially explained by the formation of complexes such as (CN)
O and CH
x
(
x=1,2,3). Post-growth annealing performed on the samples suggests that the out-diffusion of such complexes is strongly influenced by the crystallinity of the films. The high porosity of films grown at temperatures ≤310
°C is favorable for the diffusion of the complexes, which results in a more efficient thermal activation of nitrogen acceptors in ZnO:N. |
| doi_str_mv | 10.1016/j.jcrysgro.2011.03.029 |
| format | Article |
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°C, and subsequently annealed in oxygen at either 700 or 850
°C. In addition to nitrogen, hydrogen and carbon were also present in the samples. The presence of these impurities is partially explained by the formation of complexes such as (CN)
O and CH
x
(
x=1,2,3). Post-growth annealing performed on the samples suggests that the out-diffusion of such complexes is strongly influenced by the crystallinity of the films. The high porosity of films grown at temperatures ≤310
°C is favorable for the diffusion of the complexes, which results in a more efficient thermal activation of nitrogen acceptors in ZnO:N.</description><identifier>ISSN: 0022-0248</identifier><identifier>EISSN: 1873-5002</identifier><identifier>DOI: 10.1016/j.jcrysgro.2011.03.029</identifier><identifier>CODEN: JCRGAE</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>A1. Crystallinity ; A1. Impurity diffusion ; A1. Nitrogen solubility ; A3. MOCVD ; A3. ZnO thin films ; Annealing ; Carbon ; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) ; Condensed matter: structure, mechanical and thermal properties ; Cross-disciplinary physics: materials science; rheology ; Crystal growth ; Crystallinity ; Diffusion ; Diffusion in solids ; Equations of state, phase equilibria, and phase transitions ; Exact sciences and technology ; Impurities ; Materials science ; Methods of crystal growth; physics of crystal growth ; Methods of deposition of films and coatings; film growth and epitaxy ; Physics ; Solubility ; Solubility, segregation, and mixing; phase separation ; Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation ; Transport properties of condensed matter (nonelectronic) ; Zinc oxide</subject><ispartof>Journal of crystal growth, 2011-06, Vol.324 (1), p.243-247</ispartof><rights>2011</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c374t-98cdc6d075269c0fdfefbb62efaf6cb46ee49768dab103ca787eb5582c9117ca3</citedby><cites>FETCH-LOGICAL-c374t-98cdc6d075269c0fdfefbb62efaf6cb46ee49768dab103ca787eb5582c9117ca3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.jcrysgro.2011.03.029$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3548,27923,27924,45994</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=24276908$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Dangbégnon, J.K.</creatorcontrib><creatorcontrib>Talla, K.</creatorcontrib><creatorcontrib>Vines, L.</creatorcontrib><creatorcontrib>Botha, J.R.</creatorcontrib><title>Effect of the crystallinity of MOCVD-grown ZnO:N on the diffusion of impurities</title><title>Journal of crystal growth</title><description>The solubility of nitrogen in ZnO films grown at various temperatures by metalorganic chemical vapor deposition, using NO as both oxygen and nitrogen sources, was investigated. ZnO films were grown at 270, 310 and 370
°C, and subsequently annealed in oxygen at either 700 or 850
°C. In addition to nitrogen, hydrogen and carbon were also present in the samples. The presence of these impurities is partially explained by the formation of complexes such as (CN)
O and CH
x
(
x=1,2,3). Post-growth annealing performed on the samples suggests that the out-diffusion of such complexes is strongly influenced by the crystallinity of the films. The high porosity of films grown at temperatures ≤310
°C is favorable for the diffusion of the complexes, which results in a more efficient thermal activation of nitrogen acceptors in ZnO:N.</description><subject>A1. Crystallinity</subject><subject>A1. Impurity diffusion</subject><subject>A1. Nitrogen solubility</subject><subject>A3. MOCVD</subject><subject>A3. ZnO thin films</subject><subject>Annealing</subject><subject>Carbon</subject><subject>Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Crystal growth</subject><subject>Crystallinity</subject><subject>Diffusion</subject><subject>Diffusion in solids</subject><subject>Equations of state, phase equilibria, and phase transitions</subject><subject>Exact sciences and technology</subject><subject>Impurities</subject><subject>Materials science</subject><subject>Methods of crystal growth; physics of crystal growth</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Physics</subject><subject>Solubility</subject><subject>Solubility, segregation, and mixing; phase separation</subject><subject>Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation</subject><subject>Transport properties of condensed matter (nonelectronic)</subject><subject>Zinc oxide</subject><issn>0022-0248</issn><issn>1873-5002</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNqFkL1OwzAURi0EEqXwCigLYkq4dhLHYQKV8iMBXYCBxXKca3CVJsVOQX17HFpYWWzZOt93dQ8hxxQSCpSfzZO5dmv_5rqEAaUJpAmwcoeMqCjSOAdgu2QUThYDy8Q-OfB-DhCSFEZkNjUGdR91JurfMRqKetU0trX9evh8mE1eruLQ_dVGr-3s_DHq2h-ytsasvA2vQNnFcuVsb9Efkj2jGo9H23tMnq-nT5Pb-H52cze5vI91WmR9XApda15DkTNeajC1QVNVnKFRhusq44hZWXBRq4pCqlUhCqzyXDBdUlpolY7J6aZ36bqPFfpeLqzX2DSqxW7lpRBlltGMl4HkG1K7znuHRi6dXSi3lhTkIFDO5a9AOQiUkMogMARPtiOU16oxTrXa-r80y1jBSxCBu9hwGPb9tOik1xZbjbV1Qa2sO_vfqG-b8Yrn</recordid><startdate>20110601</startdate><enddate>20110601</enddate><creator>Dangbégnon, J.K.</creator><creator>Talla, K.</creator><creator>Vines, L.</creator><creator>Botha, J.R.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20110601</creationdate><title>Effect of the crystallinity of MOCVD-grown ZnO:N on the diffusion of impurities</title><author>Dangbégnon, J.K. ; Talla, K. ; Vines, L. ; Botha, J.R.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c374t-98cdc6d075269c0fdfefbb62efaf6cb46ee49768dab103ca787eb5582c9117ca3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>A1. Crystallinity</topic><topic>A1. Impurity diffusion</topic><topic>A1. Nitrogen solubility</topic><topic>A3. MOCVD</topic><topic>A3. ZnO thin films</topic><topic>Annealing</topic><topic>Carbon</topic><topic>Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Crystal growth</topic><topic>Crystallinity</topic><topic>Diffusion</topic><topic>Diffusion in solids</topic><topic>Equations of state, phase equilibria, and phase transitions</topic><topic>Exact sciences and technology</topic><topic>Impurities</topic><topic>Materials science</topic><topic>Methods of crystal growth; physics of crystal growth</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Physics</topic><topic>Solubility</topic><topic>Solubility, segregation, and mixing; phase separation</topic><topic>Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation</topic><topic>Transport properties of condensed matter (nonelectronic)</topic><topic>Zinc oxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Dangbégnon, J.K.</creatorcontrib><creatorcontrib>Talla, K.</creatorcontrib><creatorcontrib>Vines, L.</creatorcontrib><creatorcontrib>Botha, J.R.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of crystal growth</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Dangbégnon, J.K.</au><au>Talla, K.</au><au>Vines, L.</au><au>Botha, J.R.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of the crystallinity of MOCVD-grown ZnO:N on the diffusion of impurities</atitle><jtitle>Journal of crystal growth</jtitle><date>2011-06-01</date><risdate>2011</risdate><volume>324</volume><issue>1</issue><spage>243</spage><epage>247</epage><pages>243-247</pages><issn>0022-0248</issn><eissn>1873-5002</eissn><coden>JCRGAE</coden><abstract>The solubility of nitrogen in ZnO films grown at various temperatures by metalorganic chemical vapor deposition, using NO as both oxygen and nitrogen sources, was investigated. ZnO films were grown at 270, 310 and 370
°C, and subsequently annealed in oxygen at either 700 or 850
°C. In addition to nitrogen, hydrogen and carbon were also present in the samples. The presence of these impurities is partially explained by the formation of complexes such as (CN)
O and CH
x
(
x=1,2,3). Post-growth annealing performed on the samples suggests that the out-diffusion of such complexes is strongly influenced by the crystallinity of the films. The high porosity of films grown at temperatures ≤310
°C is favorable for the diffusion of the complexes, which results in a more efficient thermal activation of nitrogen acceptors in ZnO:N.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jcrysgro.2011.03.029</doi><tpages>5</tpages></addata></record> |
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| subjects | A1. Crystallinity A1. Impurity diffusion A1. Nitrogen solubility A3. MOCVD A3. ZnO thin films Annealing Carbon Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Crystal growth Crystallinity Diffusion Diffusion in solids Equations of state, phase equilibria, and phase transitions Exact sciences and technology Impurities Materials science Methods of crystal growth physics of crystal growth Methods of deposition of films and coatings film growth and epitaxy Physics Solubility Solubility, segregation, and mixing phase separation Theory and models of crystal growth physics of crystal growth, crystal morphology and orientation Transport properties of condensed matter (nonelectronic) Zinc oxide |
| title | Effect of the crystallinity of MOCVD-grown ZnO:N on the diffusion of impurities |
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