Growth of InAs quantum dots and dashes on silicon substrates: Formation and characterization

Self assembled InAs quantum dots (QDs) are grown by solid source molecular beam epitaxy on (100) and (111) Si substrates using Stranski–Krastanov (SK) growth mode. Reflection high energy diffraction (RHEED) streak patterns confirm that the combination of the atomic hydrogen followed by thermal desor...

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Veröffentlicht in:	Journal of crystal growth 2011-05, Vol.323 (1), p.422-425
Hauptverfasser:	Alzoubi, T., Usman, M., Benyoucef, M., Reithmaier, J.P.
Format:	Artikel
Sprache:	eng
Schlagworte:	A1. Quantum dots and dashes (nanostructures) A3. Molecular beam epitaxy Applied sciences B1. InAs B1. Silicon B2. Semiconducting III–V materials Cleaning Cross-disciplinary physics: materials science rheology Density Desorption Electronics Exact sciences and technology Gallium Indium arsenides Materials science Methods of deposition of films and coatings film growth and epitaxy Molecular electronics, nanoelectronics Nanoscale materials and structures: fabrication and characterization Other semiconductors Oxides Physics Quantum dots Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon substrates Specific materials Theory and models of film growth
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