Si passivation for Ge pMOSFETs: Impact of Si cap growth conditions

► Impact of Si cap Ge passivation pn Ge pMOSFETs performances. ► Impact of RPCVD Si growth process conditions on Si crystallinity and Ge segregation. ► Offers the best route for Ge passivation. Ultra thin Si cap growth by Reduced Pressure Chemical Vapor Deposition on relaxed Ge substrates is detaile...

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Veröffentlicht in:	Solid-state electronics 2011-06, Vol.60 (1), p.116-121
Hauptverfasser:	Vincent, B., Loo, R., Vandervorst, W., Delmotte, J., Douhard, B., Valev, V.K., Vanbel, M., Verbiest, T., Rip, J., Brijs, B., Conard, T., Claypool, C., Takeuchi, S., Zaima, S., Mitard, J., De Jaeger, B., Dekoster, J., Caymax, M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Cross-disciplinary physics: materials science rheology Electronics Exact sciences and technology Germanium Germanium MOSFET Germanium passivation Low temperature CVD Materials science Methods of deposition of films and coatings film growth and epitaxy Microelectronic fabrication (materials and surfaces technology) Monolayers Passivation Physics Precursors Segregations Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Si precursors Silicon Silicon substrates Transistors Trisilane Ultrathin Si growth on germanium
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