Formation of electroless barrier and seed layers in a high aspect ratio through-Si vias using Au nanoparticle catalyst for all-wet Cu filling technology

► Conformal electroless barrier and seed layers were formed in high aspect ratio TSV. ► Au nanoparticles of 20 nm diameter were used as a catalyst. ► Adhesion strength of the diffusion barrier films are enhanced with annealing at 300 °C. ► This technology enables all-wet fabrication of Cu-filled TSV...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Electrochimica acta 2011-07, Vol.56 (17), p.6245-6250
Hauptverfasser: Inoue, Fumihiro, Shimizu, Tomohiro, Yokoyama, Takumi, Miyake, Hiroshi, Kondo, Kazuo, Saito, Takeyasu, Hayashi, Taro, Tanaka, Shukichi, Terui, Toshifumi, Shingubara, Shoso
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!