Optical properties of fresh dislocations in GaN
Optical properties of fresh dislocations, (a/3)[112¯0]-type edge dislocations on the (11¯00) prismatic plane, introduced into GaN by plastic deformation at elevated temperatures were investigated by photoluminescence and optical absorption measurements. Plastic deformation acts as an effective passi...
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| Veröffentlicht in: | Journal of crystal growth 2011-03, Vol.318 (1), p.415-417 |
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| container_title | Journal of crystal growth |
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| creator | Yonenaga, I. Ohno, Y. Taishi, T. Tokumoto, Y. Makino, H. Yao, T. Kamimura, Y. Edagawa, K. |
| description | Optical properties of fresh dislocations, (a/3)[112¯0]-type edge dislocations on the (11¯00) prismatic plane, introduced into GaN by plastic deformation at elevated temperatures were investigated by photoluminescence and optical absorption measurements. Plastic deformation acts as an effective passivation, leading to remarkable reduction of near-band-edge photoluminescence intensity centered at 3.48eV and noticeable red-shift of the optical absorption edge. In a model of the Franz–Keldysh effect, the induced edge dislocations posses nonradiative trap sites around 3e/c along their core, resulting in the reduction of free-carrier concentration. Also, the induced dislocations give rise to some luminescence peaks in the energy range 1.7–2.4eV, differing from the yellow luminescence, which implies the formation of radiative recombination centers by the dislocations. |
| doi_str_mv | 10.1016/j.jcrysgro.2010.10.060 |
| format | Article |
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Plastic deformation acts as an effective passivation, leading to remarkable reduction of near-band-edge photoluminescence intensity centered at 3.48eV and noticeable red-shift of the optical absorption edge. In a model of the Franz–Keldysh effect, the induced edge dislocations posses nonradiative trap sites around 3e/c along their core, resulting in the reduction of free-carrier concentration. Also, the induced dislocations give rise to some luminescence peaks in the energy range 1.7–2.4eV, differing from the yellow luminescence, which implies the formation of radiative recombination centers by the dislocations.</description><identifier>ISSN: 0022-0248</identifier><identifier>EISSN: 1873-5002</identifier><identifier>DOI: 10.1016/j.jcrysgro.2010.10.060</identifier><identifier>CODEN: JCRGAE</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>A1. Defects ; A1. Line defects ; A1. Optical absorption ; A1. Photoluminescence ; A2. 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Plastic deformation acts as an effective passivation, leading to remarkable reduction of near-band-edge photoluminescence intensity centered at 3.48eV and noticeable red-shift of the optical absorption edge. In a model of the Franz–Keldysh effect, the induced edge dislocations posses nonradiative trap sites around 3e/c along their core, resulting in the reduction of free-carrier concentration. Also, the induced dislocations give rise to some luminescence peaks in the energy range 1.7–2.4eV, differing from the yellow luminescence, which implies the formation of radiative recombination centers by the dislocations.</description><subject>A1. Defects</subject><subject>A1. Line defects</subject><subject>A1. Optical absorption</subject><subject>A1. Photoluminescence</subject><subject>A2. Hydride vapor phase epitaxy</subject><subject>B2. Nitrides</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Dislocations</subject><subject>Edge dislocations</subject><subject>Exact sciences and technology</subject><subject>Gallium nitrides</subject><subject>Luminescence</subject><subject>Materials science</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Optical properties</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Optical properties of bulk materials and thin films</subject><subject>Photoluminescence</subject><subject>Physics</subject><subject>Plastic deformation</subject><subject>Reduction</subject><subject>Vapor phase epitaxy; growth from vapor phase</subject><issn>0022-0248</issn><issn>1873-5002</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNqFkE9PwzAMxSMEEmPwFVAviFM7J-mf9AaaYCBN7ALnKE0dSNW1JemQ9u1J2eDKxZas957tHyHXFBIKNF80SaPd3r-7PmHwM0wghxMyo6LgcQbATsksVBYDS8U5ufC-AQhOCjOy2Ayj1aqNBtcP6EaLPupNZBz6j6i2vu21Gm3f-ch20Uq9XJIzo1qPV8c-J2-PD6_Lp3i9WT0v79ex5kU6xlxkteDcVFAzU5YoiqxSGvJKlClVQpusUCUXtMBcVQoFr3MmQBnGSso0Rz4nt4fccNfnDv0ot9ZrbFvVYb_zUkxBUFIalPlBqV3vvUMjB2e3yu0lBTkBko38BSQnQNM8AArGm-MK5QMB41Snrf9zsxRYlhZl0N0ddBj-_bLopNcWO421dahHWff2v1XfR9J-cA</recordid><startdate>20110301</startdate><enddate>20110301</enddate><creator>Yonenaga, I.</creator><creator>Ohno, Y.</creator><creator>Taishi, T.</creator><creator>Tokumoto, Y.</creator><creator>Makino, H.</creator><creator>Yao, T.</creator><creator>Kamimura, Y.</creator><creator>Edagawa, K.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20110301</creationdate><title>Optical properties of fresh dislocations in GaN</title><author>Yonenaga, I. ; Ohno, Y. ; Taishi, T. ; Tokumoto, Y. ; Makino, H. ; Yao, T. ; Kamimura, Y. ; Edagawa, K.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c374t-385d833fb0d2f99e875bac06b8941a8cf57a93817e6abae83d6280af22912c3e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>A1. Defects</topic><topic>A1. Line defects</topic><topic>A1. Optical absorption</topic><topic>A1. Photoluminescence</topic><topic>A2. Hydride vapor phase epitaxy</topic><topic>B2. 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Plastic deformation acts as an effective passivation, leading to remarkable reduction of near-band-edge photoluminescence intensity centered at 3.48eV and noticeable red-shift of the optical absorption edge. In a model of the Franz–Keldysh effect, the induced edge dislocations posses nonradiative trap sites around 3e/c along their core, resulting in the reduction of free-carrier concentration. Also, the induced dislocations give rise to some luminescence peaks in the energy range 1.7–2.4eV, differing from the yellow luminescence, which implies the formation of radiative recombination centers by the dislocations.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jcrysgro.2010.10.060</doi><tpages>3</tpages></addata></record> |
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| subjects | A1. Defects A1. Line defects A1. Optical absorption A1. Photoluminescence A2. Hydride vapor phase epitaxy B2. Nitrides Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Dislocations Edge dislocations Exact sciences and technology Gallium nitrides Luminescence Materials science Methods of deposition of films and coatings film growth and epitaxy Optical properties Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of bulk materials and thin films Photoluminescence Physics Plastic deformation Reduction Vapor phase epitaxy growth from vapor phase |
| title | Optical properties of fresh dislocations in GaN |
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