Analysis and design of an ultra-wideband low-noise amplifier using resistive feedback in SiGe HBT technology

We present the analysis and design of an inductorless wide-band SiGe heterojunction bipolar transistor low-noise amplifier (LNA) using a resistive feedback scheme for application in ultra-wideband systems. Multiple feedback loops enable sufficient gain and low noise figure, and is competitive with c...

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Veröffentlicht in:	IEEE transactions on microwave theory and techniques 2006-03, Vol.54 (3), p.1262-1268
Hauptverfasser:	Jongsoo Lee, Cressler, J.D.
Format:	Artikel
Sprache:	eng
Schlagworte:	Amplification Amplifiers Applied sciences Broadband amplifiers Circuit properties Design engineering Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology Exact solutions Feedback Feedback loop Gain Germanium silicon alloys Heterojunction bipolar transistors Low-noise amplifier (LNA) Low-noise amplifiers Magnetic devices Narrowband Noise figure Noise levels Performance analysis Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices SiGe heterojunction bipolar transistor (HBT) Silicon germanides Silicon germanium Ultra wideband technology ultra-wideband (UWB)
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