Growth of semi-polar InN layer on GaAs (110) surface by MOVPE

Investigation of the hetero-epitaxial growth of InN on a GaAs (110) substrate was performed by metalorganic vapor phase epitaxy in order to realize the formation of semi-polar InN layer on it. The orientation relationship between InN and GaAs (110) was confirmed by 2θ−ω and pole figure of X-ray diffraction measurements. It was found that the crystalline orientation strongly depended on the growth temperature; mixed domains of (101̄3) and (112̄0) InN have been grown on GaAs (110) surfaces when the growth temperature was below 550°C, while (101̄3) semi-polar InN layers could be grown by increasing the growth temperature above 575°C. It was also found that the in-plane anisotropy of semi-polar InN layer was suppressed by increasing the growth temperature. Epitaxial relationship of the InN with the GaAs (110) substrate was InN (101̄3) plane parallel to GaAs (110) and InN (2̄110) plane parallel to GaAs(1̄10).