Ammonothermal growth of high-quality GaN crystals on HVPE template seeds

High quality GaN crystals have been successfully grown by the ammonothermal method in alkaline ammonia solutions using hydride vapor phase epitaxy (HVPE) seeds. The grown crystals, over 1 mmthick, are clear and possess excellent structural and optical properties. The crystalline structure of the as-...

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Veröffentlicht in:	Journal of crystal growth 2011-03, Vol.318 (1), p.1030-1033
Hauptverfasser:	Wang, Buguo, Bliss, David, Suscavage, Michael, Swider, Stacy, Lancto, Robert, Lynch, Candace, Weyburne, David, Li, Ti, Ponce, Fernando A.
Format:	Artikel
Sprache:	eng
Schlagworte:	A1. HVPE seed A2. Crystal growth A2. The ammonothermal technique B1. Bulk GaN B2. Characterization Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Crystal structure Crystals Diffraction Exact sciences and technology Excitons Gallium nitrides Heating Materials science Methods of crystal growth physics of crystal growth Methods of deposition of films and coatings film growth and epitaxy Nucleation Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of bulk materials and thin films Physics Seeds Structure of solids and liquids crystallography Structure of specific crystalline solids Theory and models of crystal growth physics of crystal growth, crystal morphology and orientation Vapor phase epitaxy growth from vapor phase
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