Determination of Diffusion Lengths With the Use of EBIC From a Diffused Junction With Any Values of Junction Depths
Minority carrier diffusion lengths determine the performance of bipolar and photodiode devices. An electron-beam- induced-current (EBIC) method has been widely used to extract this parameter. The extraction of the diffusion lengths involves a p-n junction to collect the minority carriers. The most u...
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| Veröffentlicht in: | IEEE transactions on electron devices 2006-09, Vol.53 (9), p.2358-2363 |
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| container_title | IEEE transactions on electron devices |
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| creator | Kurniawan, O. Ong, V.K.S. |
| description | Minority carrier diffusion lengths determine the performance of bipolar and photodiode devices. An electron-beam- induced-current (EBIC) method has been widely used to extract this parameter. The extraction of the diffusion lengths involves a p-n junction to collect the minority carriers. The most used configuration, which is called the normal collector, assumes that the junction has an infinitely large junction depth. However, in planar devices, the junction depth is comparable to the diffusion lengths of the material. This paper presents a simple and yet accurate method to determine the diffusion lengths of the material from a diffused junction with any values of junction depths. The diffusion length of the material is extracted from the negative reciprocal of the slope of the EBIC profile in semi-logarithmic plot. It was found that the proposed method is able to extract the diffusion lengths accurately for any values of the junction depths and surface recombination velocities. The maximum error in using this method is about 6% |
| doi_str_mv | 10.1109/TED.2006.880837 |
| format | Article |
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An electron-beam- induced-current (EBIC) method has been widely used to extract this parameter. The extraction of the diffusion lengths involves a p-n junction to collect the minority carriers. The most used configuration, which is called the normal collector, assumes that the junction has an infinitely large junction depth. However, in planar devices, the junction depth is comparable to the diffusion lengths of the material. This paper presents a simple and yet accurate method to determine the diffusion lengths of the material from a diffused junction with any values of junction depths. The diffusion length of the material is extracted from the negative reciprocal of the slope of the EBIC profile in semi-logarithmic plot. It was found that the proposed method is able to extract the diffusion lengths accurately for any values of the junction depths and surface recombination velocities. The maximum error in using this method is about 6%</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2006.880837</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Accumulators ; Applied sciences ; Boundary conditions ; Collectors ; Compound structure devices ; Devices ; Diffusion ; Diffusion length ; electron microscopy ; Electron-beam applications ; Electronics ; Exact sciences and technology ; Extraction ; Mathematical model ; Minority carriers ; Optoelectronic devices ; P-n junctions ; Photodiodes ; Radiative recombination ; Semiconductor electronics. Microelectronics. Optoelectronics. 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An electron-beam- induced-current (EBIC) method has been widely used to extract this parameter. The extraction of the diffusion lengths involves a p-n junction to collect the minority carriers. The most used configuration, which is called the normal collector, assumes that the junction has an infinitely large junction depth. However, in planar devices, the junction depth is comparable to the diffusion lengths of the material. This paper presents a simple and yet accurate method to determine the diffusion lengths of the material from a diffused junction with any values of junction depths. The diffusion length of the material is extracted from the negative reciprocal of the slope of the EBIC profile in semi-logarithmic plot. It was found that the proposed method is able to extract the diffusion lengths accurately for any values of the junction depths and surface recombination velocities. The maximum error in using this method is about 6%</description><subject>Accumulators</subject><subject>Applied sciences</subject><subject>Boundary conditions</subject><subject>Collectors</subject><subject>Compound structure devices</subject><subject>Devices</subject><subject>Diffusion</subject><subject>Diffusion length</subject><subject>electron microscopy</subject><subject>Electron-beam applications</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Extraction</subject><subject>Mathematical model</subject><subject>Minority carriers</subject><subject>Optoelectronic devices</subject><subject>P-n junctions</subject><subject>Photodiodes</subject><subject>Radiative recombination</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. 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Microelectronics. Optoelectronics. Solid state devices</topic><topic>semiconductor material measurements</topic><topic>simulation</topic><topic>Studies</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kurniawan, O.</creatorcontrib><creatorcontrib>Ong, V.K.S.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kurniawan, O.</au><au>Ong, V.K.S.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Determination of Diffusion Lengths With the Use of EBIC From a Diffused Junction With Any Values of Junction Depths</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2006-09-01</date><risdate>2006</risdate><volume>53</volume><issue>9</issue><spage>2358</spage><epage>2363</epage><pages>2358-2363</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>Minority carrier diffusion lengths determine the performance of bipolar and photodiode devices. An electron-beam- induced-current (EBIC) method has been widely used to extract this parameter. The extraction of the diffusion lengths involves a p-n junction to collect the minority carriers. The most used configuration, which is called the normal collector, assumes that the junction has an infinitely large junction depth. However, in planar devices, the junction depth is comparable to the diffusion lengths of the material. This paper presents a simple and yet accurate method to determine the diffusion lengths of the material from a diffused junction with any values of junction depths. The diffusion length of the material is extracted from the negative reciprocal of the slope of the EBIC profile in semi-logarithmic plot. It was found that the proposed method is able to extract the diffusion lengths accurately for any values of the junction depths and surface recombination velocities. 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| subjects | Accumulators Applied sciences Boundary conditions Collectors Compound structure devices Devices Diffusion Diffusion length electron microscopy Electron-beam applications Electronics Exact sciences and technology Extraction Mathematical model Minority carriers Optoelectronic devices P-n junctions Photodiodes Radiative recombination Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices semiconductor material measurements simulation Studies |
| title | Determination of Diffusion Lengths With the Use of EBIC From a Diffused Junction With Any Values of Junction Depths |
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