The influence of diffusion-induced dislocations on high efficiency silicon solar cells

Heavy boron and phosphorus diffusions are used in many high efficiency, monocrystalline silicon solar cell designs to form localized contact diffusions and back surface fields. It is important to cell performance that these diffusion processes do not increase bulk recombination by the introduction o...

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Veröffentlicht in:	IEEE transactions on electron devices 2006-03, Vol.53 (3), p.457-464
Hauptverfasser:	Cousins, P.J., Cotter, J.E.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Boron Charge carrier lifetime Circuit analysis Diffusion Diffusion processes Dislocations Electric, optical and optoelectronic circuits Electronics Exact sciences and technology losses Networks Optoelectronic devices Phosphorus Photovoltaic cells Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon Solar cells Theoretical study. Circuits analysis and design
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