The influence of diffusion-induced dislocations on high efficiency silicon solar cells
Heavy boron and phosphorus diffusions are used in many high efficiency, monocrystalline silicon solar cell designs to form localized contact diffusions and back surface fields. It is important to cell performance that these diffusion processes do not increase bulk recombination by the introduction o...
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| Veröffentlicht in: | IEEE transactions on electron devices 2006-03, Vol.53 (3), p.457-464 |
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| container_end_page | 464 |
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| container_title | IEEE transactions on electron devices |
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| creator | Cousins, P.J. Cotter, J.E. |
| description | Heavy boron and phosphorus diffusions are used in many high efficiency, monocrystalline silicon solar cell designs to form localized contact diffusions and back surface fields. It is important to cell performance that these diffusion processes do not increase bulk recombination by the introduction of lattice defects. This paper investigates the effect of boron and phosphorus misfit dislocation networks on the bulk recombination parameters, and performance of high efficiency silicon solar cells. It demonstrates that the formation of either a boron or phosphorus misfit dislocation network generates bulk asymmetric Shockley-Read-Hall recombination centers, and that these adversely affect the current-voltage curve, local ideality factor, and ultimately the performance of p-type silicon solar cells. |
| doi_str_mv | 10.1109/TED.2005.863535 |
| format | Article |
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It is important to cell performance that these diffusion processes do not increase bulk recombination by the introduction of lattice defects. This paper investigates the effect of boron and phosphorus misfit dislocation networks on the bulk recombination parameters, and performance of high efficiency silicon solar cells. It demonstrates that the formation of either a boron or phosphorus misfit dislocation network generates bulk asymmetric Shockley-Read-Hall recombination centers, and that these adversely affect the current-voltage curve, local ideality factor, and ultimately the performance of p-type silicon solar cells.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2005.863535</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Boron ; Charge carrier lifetime ; Circuit analysis ; Diffusion ; Diffusion processes ; Dislocations ; Electric, optical and optoelectronic circuits ; Electronics ; Exact sciences and technology ; losses ; Networks ; Optoelectronic devices ; Phosphorus ; Photovoltaic cells ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Silicon ; Solar cells ; Theoretical study. 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It is important to cell performance that these diffusion processes do not increase bulk recombination by the introduction of lattice defects. This paper investigates the effect of boron and phosphorus misfit dislocation networks on the bulk recombination parameters, and performance of high efficiency silicon solar cells. It demonstrates that the formation of either a boron or phosphorus misfit dislocation network generates bulk asymmetric Shockley-Read-Hall recombination centers, and that these adversely affect the current-voltage curve, local ideality factor, and ultimately the performance of p-type silicon solar cells.</description><subject>Applied sciences</subject><subject>Boron</subject><subject>Charge carrier lifetime</subject><subject>Circuit analysis</subject><subject>Diffusion</subject><subject>Diffusion processes</subject><subject>Dislocations</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>losses</subject><subject>Networks</subject><subject>Optoelectronic devices</subject><subject>Phosphorus</subject><subject>Photovoltaic cells</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Silicon</subject><subject>Solar cells</subject><subject>Theoretical study. Circuits analysis and design</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kUtLAzEUhYMoWKtrF24GQV1Nm_ckS6n1AQU31W1IMzc2ZTqpk86i_96UFgQXrpKcfOdwLweha4JHhGA9nk-fRhRjMVKSCSZO0IAIUZVacnmKBhgTVWqm2Dm6SGmVn5JzOkCf8yUUofVND62DIvqiDt73KcS2DG3dO6izkpro7DZrqYhtsQxfywK8Dy5k065IoQku6yk2tiscNE26RGfeNgmujucQfTxP55PXcvb-8jZ5nJWOU7oticLcMeeBA5Uc6wX23tOagwWiK86FdUzWFVsAyYy2It-pAKuVrhZqUbEhejjkbrr43UPamnVI-wlsC7FPRinNtKq4zOT9vyRVBHOqdQZv_4Cr2Hdt3sIoKYiUAu-h8QFyXUypA282XVjbbmcINvs6TK7D7Oswhzqy4-4Ya5Ozje9s60L6tVVCaCJY5m4OXACA32-hK0EJ-wEq2ZL8</recordid><startdate>20060301</startdate><enddate>20060301</enddate><creator>Cousins, P.J.</creator><creator>Cotter, J.E.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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Microelectronics. Optoelectronics. Solid state devices</topic><topic>Silicon</topic><topic>Solar cells</topic><topic>Theoretical study. Circuits analysis and design</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Cousins, P.J.</creatorcontrib><creatorcontrib>Cotter, J.E.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Cousins, P.J.</au><au>Cotter, J.E.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The influence of diffusion-induced dislocations on high efficiency silicon solar cells</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2006-03-01</date><risdate>2006</risdate><volume>53</volume><issue>3</issue><spage>457</spage><epage>464</epage><pages>457-464</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>Heavy boron and phosphorus diffusions are used in many high efficiency, monocrystalline silicon solar cell designs to form localized contact diffusions and back surface fields. It is important to cell performance that these diffusion processes do not increase bulk recombination by the introduction of lattice defects. This paper investigates the effect of boron and phosphorus misfit dislocation networks on the bulk recombination parameters, and performance of high efficiency silicon solar cells. It demonstrates that the formation of either a boron or phosphorus misfit dislocation network generates bulk asymmetric Shockley-Read-Hall recombination centers, and that these adversely affect the current-voltage curve, local ideality factor, and ultimately the performance of p-type silicon solar cells.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TED.2005.863535</doi><tpages>8</tpages></addata></record> |
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| ispartof | IEEE transactions on electron devices, 2006-03, Vol.53 (3), p.457-464 |
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| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Boron Charge carrier lifetime Circuit analysis Diffusion Diffusion processes Dislocations Electric, optical and optoelectronic circuits Electronics Exact sciences and technology losses Networks Optoelectronic devices Phosphorus Photovoltaic cells Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon Solar cells Theoretical study. Circuits analysis and design |
| title | The influence of diffusion-induced dislocations on high efficiency silicon solar cells |
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