Design and Performance of Intergate-Channel-Connected Multi-Gate pHEMT for Antenna Switch

Conventional multi-gate pseudomorphic high-electron-mobility transistors (pHEMTs) in the off-state generate larger distortion than single-gate pHEMTs in RF switch applications. To reduce the distortion, the intergate region of multi-gate pHEMTs must be connected to the source and drain with resistor...

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Veröffentlicht in:	IEICE Transactions on Electronics 2011/06/01, Vol.E94.C(6), pp.1053-1056
Hauptverfasser:	KOYA, Shigeki, OGAWA, Takashi, TAKAZAWA, Hiroyuki, NAKAJIMA, Akishige, OSAKABE, Shinya, SHIGENO, Yasushi
Format:	Artikel
Sprache:	eng
Schlagworte:	Contact Direct current Distortion Electric contacts Electric potential Electronics Gates MMIC pHEMT RF switch Switches
Online-Zugang:	Volltext
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