Design and Performance of Intergate-Channel-Connected Multi-Gate pHEMT for Antenna Switch
Conventional multi-gate pseudomorphic high-electron-mobility transistors (pHEMTs) in the off-state generate larger distortion than single-gate pHEMTs in RF switch applications. To reduce the distortion, the intergate region of multi-gate pHEMTs must be connected to the source and drain with resistor...
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| Veröffentlicht in: | IEICE Transactions on Electronics 2011/06/01, Vol.E94.C(6), pp.1053-1056 |
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| container_title | IEICE Transactions on Electronics |
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| creator | KOYA, Shigeki OGAWA, Takashi TAKAZAWA, Hiroyuki NAKAJIMA, Akishige OSAKABE, Shinya SHIGENO, Yasushi |
| description | Conventional multi-gate pseudomorphic high-electron-mobility transistors (pHEMTs) in the off-state generate larger distortion than single-gate pHEMTs in RF switch applications. To reduce the distortion, the intergate region of multi-gate pHEMTs must be connected to the source and drain with resistors to be biased at the same DC voltage. The intergate region of multi-gate pHEMTs is too small to have an external electrical contact, so intergate-channel-connected pHEMTs (IGCC-pHEMTs) have been developed. IGCC-pHEMTs have a meander gate structure, where one side of the gate is connected to a metal wire layer, and the other is applied for an intergate region contact that does not widen the distance between the gates. A single-pole double-throw (SPDT) switch with IGCC-pHEMTs was fabricated by using a standard 0.5µm InGaAs pHEMT process. A SPDT switch with IGCC-pHEMTs is confirmed to have almost same small-signal properties and generate lower distortions. |
| doi_str_mv | 10.1587/transele.E94.C.1053 |
| format | Article |
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To reduce the distortion, the intergate region of multi-gate pHEMTs must be connected to the source and drain with resistors to be biased at the same DC voltage. The intergate region of multi-gate pHEMTs is too small to have an external electrical contact, so intergate-channel-connected pHEMTs (IGCC-pHEMTs) have been developed. IGCC-pHEMTs have a meander gate structure, where one side of the gate is connected to a metal wire layer, and the other is applied for an intergate region contact that does not widen the distance between the gates. A single-pole double-throw (SPDT) switch with IGCC-pHEMTs was fabricated by using a standard 0.5µm InGaAs pHEMT process. 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Electron.</addtitle><description>Conventional multi-gate pseudomorphic high-electron-mobility transistors (pHEMTs) in the off-state generate larger distortion than single-gate pHEMTs in RF switch applications. To reduce the distortion, the intergate region of multi-gate pHEMTs must be connected to the source and drain with resistors to be biased at the same DC voltage. The intergate region of multi-gate pHEMTs is too small to have an external electrical contact, so intergate-channel-connected pHEMTs (IGCC-pHEMTs) have been developed. IGCC-pHEMTs have a meander gate structure, where one side of the gate is connected to a metal wire layer, and the other is applied for an intergate region contact that does not widen the distance between the gates. A single-pole double-throw (SPDT) switch with IGCC-pHEMTs was fabricated by using a standard 0.5µm InGaAs pHEMT process. A SPDT switch with IGCC-pHEMTs is confirmed to have almost same small-signal properties and generate lower distortions.</description><subject>Contact</subject><subject>Direct current</subject><subject>Distortion</subject><subject>Electric contacts</subject><subject>Electric potential</subject><subject>Electronics</subject><subject>Gates</subject><subject>MMIC</subject><subject>pHEMT</subject><subject>RF switch</subject><subject>Switches</subject><issn>0916-8524</issn><issn>1745-1353</issn><issn>1745-1353</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNpdkDFPwzAQRi0EEqXwC1i8MaXEsZ04YxUKRVCBRBmYrKtzaVOlTrFdIf49rgodmL7h3rvhEXLN0hGTqrgNDqzHDkeTUoyqEUslPyEDVgiZMC75KRmkJcsTJTNxTi68X6cpUxnjA_Jxh75dWgq2pq_omt5twBqkfUMfbUC3hIBJtQJrsUuqPo4JWNPZrgtt8hCPdDudzOY0inQcBWuBvn21wawuyVkDncer3x2S9_vJvJomzy8Pj9X4OTGS5SFBoZoMlOCiKFNhBOTIWCkwa2q1EHVdMl40Ui6E4gbyNFtkJWRKSAkQrTLnQ3Jz-Lt1_ecOfdCb1hvsOrDY77xWquRKZYWMJD-QxvXeO2z01rUbcN-apXrfUf911LGjrvS-Y7SeDtbaB1ji0QEXWhPRf05-3L19pMwKnEbLfwBUkIOK</recordid><startdate>2011</startdate><enddate>2011</enddate><creator>KOYA, Shigeki</creator><creator>OGAWA, Takashi</creator><creator>TAKAZAWA, Hiroyuki</creator><creator>NAKAJIMA, Akishige</creator><creator>OSAKABE, Shinya</creator><creator>SHIGENO, Yasushi</creator><general>The Institute of Electronics, Information and Communication Engineers</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>2011</creationdate><title>Design and Performance of Intergate-Channel-Connected Multi-Gate pHEMT for Antenna Switch</title><author>KOYA, Shigeki ; OGAWA, Takashi ; TAKAZAWA, Hiroyuki ; NAKAJIMA, Akishige ; OSAKABE, Shinya ; SHIGENO, Yasushi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c516t-e48f2a84347904c4a6e1194e2fd8b4dd9137f55b483ca602b29a28455aaa84963</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Contact</topic><topic>Direct current</topic><topic>Distortion</topic><topic>Electric contacts</topic><topic>Electric potential</topic><topic>Electronics</topic><topic>Gates</topic><topic>MMIC</topic><topic>pHEMT</topic><topic>RF switch</topic><topic>Switches</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>KOYA, Shigeki</creatorcontrib><creatorcontrib>OGAWA, Takashi</creatorcontrib><creatorcontrib>TAKAZAWA, Hiroyuki</creatorcontrib><creatorcontrib>NAKAJIMA, Akishige</creatorcontrib><creatorcontrib>OSAKABE, Shinya</creatorcontrib><creatorcontrib>SHIGENO, Yasushi</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEICE Transactions on Electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>KOYA, Shigeki</au><au>OGAWA, Takashi</au><au>TAKAZAWA, Hiroyuki</au><au>NAKAJIMA, Akishige</au><au>OSAKABE, Shinya</au><au>SHIGENO, Yasushi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Design and Performance of Intergate-Channel-Connected Multi-Gate pHEMT for Antenna Switch</atitle><jtitle>IEICE Transactions on Electronics</jtitle><addtitle>IEICE Trans. Electron.</addtitle><date>2011</date><risdate>2011</risdate><volume>E94.C</volume><issue>6</issue><spage>1053</spage><epage>1056</epage><pages>1053-1056</pages><issn>0916-8524</issn><issn>1745-1353</issn><eissn>1745-1353</eissn><abstract>Conventional multi-gate pseudomorphic high-electron-mobility transistors (pHEMTs) in the off-state generate larger distortion than single-gate pHEMTs in RF switch applications. To reduce the distortion, the intergate region of multi-gate pHEMTs must be connected to the source and drain with resistors to be biased at the same DC voltage. The intergate region of multi-gate pHEMTs is too small to have an external electrical contact, so intergate-channel-connected pHEMTs (IGCC-pHEMTs) have been developed. IGCC-pHEMTs have a meander gate structure, where one side of the gate is connected to a metal wire layer, and the other is applied for an intergate region contact that does not widen the distance between the gates. A single-pole double-throw (SPDT) switch with IGCC-pHEMTs was fabricated by using a standard 0.5µm InGaAs pHEMT process. A SPDT switch with IGCC-pHEMTs is confirmed to have almost same small-signal properties and generate lower distortions.</abstract><pub>The Institute of Electronics, Information and Communication Engineers</pub><doi>10.1587/transele.E94.C.1053</doi><tpages>4</tpages></addata></record> |
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| identifier | ISSN: 0916-8524 |
| ispartof | IEICE Transactions on Electronics, 2011/06/01, Vol.E94.C(6), pp.1053-1056 |
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| language | eng |
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| source | J-STAGE (Japan Science & Technology Information Aggregator, Electronic) Freely Available Titles - Japanese |
| subjects | Contact Direct current Distortion Electric contacts Electric potential Electronics Gates MMIC pHEMT RF switch Switches |
| title | Design and Performance of Intergate-Channel-Connected Multi-Gate pHEMT for Antenna Switch |
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