Short Term Cell-Flipping Technique for Mitigating SNM Degradation Due to NBTI

Negative Bias Temperature Instability (NBTI) is one of the major reliability problems in advanced technologies. NBTI causes threshold voltage shift in a PMOS transistor. When the PMOS transistor is biased to negative voltage, threshold voltage shifts to negatively. On the other hand, the threshold v...

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Veröffentlicht in:	IEICE Transactions on Electronics 2011/04/01, Vol.E94.C(4), pp.520-529
Hauptverfasser:	KUNITAKE, Yuji, SATO, Toshinori, YASUURA, Hiroto
Format:	Artikel
Sprache:	eng
Schlagworte:	cache memory Degradation NBTI Niobium base alloys Recovery register file Semiconductor devices SRAM static noise margin Static random access memory stress probability Stresses Threshold voltage Transistors
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