Active Harmonic Load-Pull for On-Wafer Out-of-Band Device Linearity Optimization
In this paper, we present an active harmonic load-pull system especially developed for the on-wafer linearity characterization/optimization of active devices with wideband modulated signals using the out-of-band linearization technique. Our setup provides independent control of the impedances at the...
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| Veröffentlicht in: | IEEE transactions on microwave theory and techniques 2006-12, Vol.54 (12), p.4225-4236 |
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| container_title | IEEE transactions on microwave theory and techniques |
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| creator | Spirito, M. Pelk, M.J. van Rijs, F. Theeuwen, S.J.C.H. Hartskeerl, D. de Vreede, L.C.N. |
| description | In this paper, we present an active harmonic load-pull system especially developed for the on-wafer linearity characterization/optimization of active devices with wideband modulated signals using the out-of-band linearization technique. Our setup provides independent control of the impedances at the baseband, fundamental, and second-harmonic frequencies presented to the input and output of the device under test. Furthermore, to enable realistic test conditions with wideband-modulated signals, the electrical delays in the load-pull system are kept as small as possible by implementing a novel loop architecture with in-phase quadrature modulators. We have achieved a phase variation of the reflection coefficient of only 5deg/MHz for both the fundamental and second-harmonic frequencies. We demonstrate the high potential of the system for the on-wafer evaluation of new technology generations by applying out-of-band linearization to heterojunction bipolar transistor (HBT) and laterally diffused metal-oxide-semiconductor (LDMOS) devices. For the HBT, we outline a game plan to obtain the optimum efficiency-linearity tradeoff. Finally, a record-high efficiency-linearity tradeoff was achieved (without digital predistortion) for an inverse class-AB operated Philips Gen 6 LDMOS device, yielding 44% efficiency at an adjacent channel power level of -45 dBc at 2.14 GHz for an IS-95 signal |
| doi_str_mv | 10.1109/TMTT.2006.885568 |
| format | Article |
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Our setup provides independent control of the impedances at the baseband, fundamental, and second-harmonic frequencies presented to the input and output of the device under test. Furthermore, to enable realistic test conditions with wideband-modulated signals, the electrical delays in the load-pull system are kept as small as possible by implementing a novel loop architecture with in-phase quadrature modulators. We have achieved a phase variation of the reflection coefficient of only 5deg/MHz for both the fundamental and second-harmonic frequencies. We demonstrate the high potential of the system for the on-wafer evaluation of new technology generations by applying out-of-band linearization to heterojunction bipolar transistor (HBT) and laterally diffused metal-oxide-semiconductor (LDMOS) devices. For the HBT, we outline a game plan to obtain the optimum efficiency-linearity tradeoff. Finally, a record-high efficiency-linearity tradeoff was achieved (without digital predistortion) for an inverse class-AB operated Philips Gen 6 LDMOS device, yielding 44% efficiency at an adjacent channel power level of -45 dBc at 2.14 GHz for an IS-95 signal</description><identifier>ISSN: 0018-9480</identifier><identifier>EISSN: 1557-9670</identifier><identifier>DOI: 10.1109/TMTT.2006.885568</identifier><identifier>CODEN: IETMAB</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Active control ; Applied sciences ; Baseband ; Channels ; Delay ; Device characterization ; Devices ; Diffraction, scattering, reflection ; Efficiency ; Electric potential ; Exact sciences and technology ; Frequency ; Harmonics ; heterojunction bipolar transistor (HBT) ; Heterojunction bipolar transistors ; Impedance ; large-signal characterization ; laterally diffused metal-oxide-semiconductor (LDMOS) ; Linearity ; Linearization ; Linearization techniques ; load-pull ; nonlinear distortion ; on-wafer ; Optimization ; out-of-band linearization ; Radiocommunications ; Radiowave propagation ; Reflection ; Semiconductors ; System testing ; Telecommunications ; Telecommunications and information theory ; Wideband</subject><ispartof>IEEE transactions on microwave theory and techniques, 2006-12, Vol.54 (12), p.4225-4236</ispartof><rights>2007 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2006</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c418t-5598dce7c5756c3315f1b4621c000fc40f79a064da11d87f2eab456463cb360f3</citedby><cites>FETCH-LOGICAL-c418t-5598dce7c5756c3315f1b4621c000fc40f79a064da11d87f2eab456463cb360f3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4020488$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4020488$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=18367961$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Spirito, M.</creatorcontrib><creatorcontrib>Pelk, M.J.</creatorcontrib><creatorcontrib>van Rijs, F.</creatorcontrib><creatorcontrib>Theeuwen, S.J.C.H.</creatorcontrib><creatorcontrib>Hartskeerl, D.</creatorcontrib><creatorcontrib>de Vreede, L.C.N.</creatorcontrib><title>Active Harmonic Load-Pull for On-Wafer Out-of-Band Device Linearity Optimization</title><title>IEEE transactions on microwave theory and techniques</title><addtitle>TMTT</addtitle><description>In this paper, we present an active harmonic load-pull system especially developed for the on-wafer linearity characterization/optimization of active devices with wideband modulated signals using the out-of-band linearization technique. Our setup provides independent control of the impedances at the baseband, fundamental, and second-harmonic frequencies presented to the input and output of the device under test. Furthermore, to enable realistic test conditions with wideband-modulated signals, the electrical delays in the load-pull system are kept as small as possible by implementing a novel loop architecture with in-phase quadrature modulators. We have achieved a phase variation of the reflection coefficient of only 5deg/MHz for both the fundamental and second-harmonic frequencies. We demonstrate the high potential of the system for the on-wafer evaluation of new technology generations by applying out-of-band linearization to heterojunction bipolar transistor (HBT) and laterally diffused metal-oxide-semiconductor (LDMOS) devices. For the HBT, we outline a game plan to obtain the optimum efficiency-linearity tradeoff. Finally, a record-high efficiency-linearity tradeoff was achieved (without digital predistortion) for an inverse class-AB operated Philips Gen 6 LDMOS device, yielding 44% efficiency at an adjacent channel power level of -45 dBc at 2.14 GHz for an IS-95 signal</description><subject>Active control</subject><subject>Applied sciences</subject><subject>Baseband</subject><subject>Channels</subject><subject>Delay</subject><subject>Device characterization</subject><subject>Devices</subject><subject>Diffraction, scattering, reflection</subject><subject>Efficiency</subject><subject>Electric potential</subject><subject>Exact sciences and technology</subject><subject>Frequency</subject><subject>Harmonics</subject><subject>heterojunction bipolar transistor (HBT)</subject><subject>Heterojunction bipolar transistors</subject><subject>Impedance</subject><subject>large-signal characterization</subject><subject>laterally diffused metal-oxide-semiconductor (LDMOS)</subject><subject>Linearity</subject><subject>Linearization</subject><subject>Linearization techniques</subject><subject>load-pull</subject><subject>nonlinear distortion</subject><subject>on-wafer</subject><subject>Optimization</subject><subject>out-of-band linearization</subject><subject>Radiocommunications</subject><subject>Radiowave propagation</subject><subject>Reflection</subject><subject>Semiconductors</subject><subject>System testing</subject><subject>Telecommunications</subject><subject>Telecommunications and information theory</subject><subject>Wideband</subject><issn>0018-9480</issn><issn>1557-9670</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2006</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkE1LJDEQhoOs4KzrXfDSCMueMlY6H119dF11hJbxMOIxZNIJRHo6Y9ItuL_eHmZwYU9VRT31UjyEnDOYMwb11epxtZqXAGqOKKXCIzJjUla0VhV8IzMAhrQWCCfke86v0ygk4Iw8XdshvLtiYdIm9sEWTTQtfRq7rvAxFcuevhjvpmYcaPT0t-nb4o97D9YVTeidSWH4KJbbIWzCXzOE2P8gx9502Z0d6il5vrtd3Sxos7x_uLluqBUMByplja11lZWVVJZzJj1bC1UyCwDeCvBVbUCJ1jDWYuVLZ9ZCKqG4XXMFnp-SX_vcbYpvo8uD3oRsXdeZ3sUxa8SaY4kMJ_LyP_I1jqmfntOoJK8VK9kEwR6yKeacnNfbFDYmfWgGeidY7wTrnWC9Fzyd_DzkmmxN55Ppbcj_7pCragqfuIs9F5xzX2sBJQhE_gkG14IK</recordid><startdate>20061201</startdate><enddate>20061201</enddate><creator>Spirito, M.</creator><creator>Pelk, M.J.</creator><creator>van Rijs, F.</creator><creator>Theeuwen, S.J.C.H.</creator><creator>Hartskeerl, D.</creator><creator>de Vreede, L.C.N.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20061201</creationdate><title>Active Harmonic Load-Pull for On-Wafer Out-of-Band Device Linearity Optimization</title><author>Spirito, M. ; Pelk, M.J. ; van Rijs, F. ; Theeuwen, S.J.C.H. ; Hartskeerl, D. ; de Vreede, L.C.N.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c418t-5598dce7c5756c3315f1b4621c000fc40f79a064da11d87f2eab456463cb360f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2006</creationdate><topic>Active control</topic><topic>Applied sciences</topic><topic>Baseband</topic><topic>Channels</topic><topic>Delay</topic><topic>Device characterization</topic><topic>Devices</topic><topic>Diffraction, scattering, reflection</topic><topic>Efficiency</topic><topic>Electric potential</topic><topic>Exact sciences and technology</topic><topic>Frequency</topic><topic>Harmonics</topic><topic>heterojunction bipolar transistor (HBT)</topic><topic>Heterojunction bipolar transistors</topic><topic>Impedance</topic><topic>large-signal characterization</topic><topic>laterally diffused metal-oxide-semiconductor (LDMOS)</topic><topic>Linearity</topic><topic>Linearization</topic><topic>Linearization techniques</topic><topic>load-pull</topic><topic>nonlinear distortion</topic><topic>on-wafer</topic><topic>Optimization</topic><topic>out-of-band linearization</topic><topic>Radiocommunications</topic><topic>Radiowave propagation</topic><topic>Reflection</topic><topic>Semiconductors</topic><topic>System testing</topic><topic>Telecommunications</topic><topic>Telecommunications and information theory</topic><topic>Wideband</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Spirito, M.</creatorcontrib><creatorcontrib>Pelk, M.J.</creatorcontrib><creatorcontrib>van Rijs, F.</creatorcontrib><creatorcontrib>Theeuwen, S.J.C.H.</creatorcontrib><creatorcontrib>Hartskeerl, D.</creatorcontrib><creatorcontrib>de Vreede, L.C.N.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE transactions on microwave theory and techniques</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Spirito, M.</au><au>Pelk, M.J.</au><au>van Rijs, F.</au><au>Theeuwen, S.J.C.H.</au><au>Hartskeerl, D.</au><au>de Vreede, L.C.N.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Active Harmonic Load-Pull for On-Wafer Out-of-Band Device Linearity Optimization</atitle><jtitle>IEEE transactions on microwave theory and techniques</jtitle><stitle>TMTT</stitle><date>2006-12-01</date><risdate>2006</risdate><volume>54</volume><issue>12</issue><spage>4225</spage><epage>4236</epage><pages>4225-4236</pages><issn>0018-9480</issn><eissn>1557-9670</eissn><coden>IETMAB</coden><abstract>In this paper, we present an active harmonic load-pull system especially developed for the on-wafer linearity characterization/optimization of active devices with wideband modulated signals using the out-of-band linearization technique. Our setup provides independent control of the impedances at the baseband, fundamental, and second-harmonic frequencies presented to the input and output of the device under test. Furthermore, to enable realistic test conditions with wideband-modulated signals, the electrical delays in the load-pull system are kept as small as possible by implementing a novel loop architecture with in-phase quadrature modulators. We have achieved a phase variation of the reflection coefficient of only 5deg/MHz for both the fundamental and second-harmonic frequencies. We demonstrate the high potential of the system for the on-wafer evaluation of new technology generations by applying out-of-band linearization to heterojunction bipolar transistor (HBT) and laterally diffused metal-oxide-semiconductor (LDMOS) devices. For the HBT, we outline a game plan to obtain the optimum efficiency-linearity tradeoff. Finally, a record-high efficiency-linearity tradeoff was achieved (without digital predistortion) for an inverse class-AB operated Philips Gen 6 LDMOS device, yielding 44% efficiency at an adjacent channel power level of -45 dBc at 2.14 GHz for an IS-95 signal</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TMTT.2006.885568</doi><tpages>12</tpages></addata></record> |
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| ispartof | IEEE transactions on microwave theory and techniques, 2006-12, Vol.54 (12), p.4225-4236 |
| issn | 0018-9480 1557-9670 |
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| source | IEEE Electronic Library (IEL) |
| subjects | Active control Applied sciences Baseband Channels Delay Device characterization Devices Diffraction, scattering, reflection Efficiency Electric potential Exact sciences and technology Frequency Harmonics heterojunction bipolar transistor (HBT) Heterojunction bipolar transistors Impedance large-signal characterization laterally diffused metal-oxide-semiconductor (LDMOS) Linearity Linearization Linearization techniques load-pull nonlinear distortion on-wafer Optimization out-of-band linearization Radiocommunications Radiowave propagation Reflection Semiconductors System testing Telecommunications Telecommunications and information theory Wideband |
| title | Active Harmonic Load-Pull for On-Wafer Out-of-Band Device Linearity Optimization |
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