HiSIM2: Advanced MOSFET Model Valid for RF Circuit Simulation

The compact MOSFET model development trend leads to models based on the channel surface potential, allowing higher accuracy and a reduced number of model parameters. Among these, the Hiroshima University Semiconductor Technology Academic Research Center IGFET Model (HiSIM) solves the surface potenti...

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Veröffentlicht in:	IEEE transactions on electron devices 2006-09, Vol.53 (9), p.1994-2007
Hauptverfasser:	Miura-Mattausch, M., Sadachika, N., Navarro, D., Suzuki, G., Takeda, Y., Miyake, M., Warabino, T., Mizukane, Y., Inagaki, R., Ezaki, T., Mattausch, H.J., Ohguro, T., Iizuka, T., Taguchi, M., Kumashiro, S., Miyamoto, S.
Format:	Artikel
Sprache:	eng
Schlagworte:	Accuracy Applied sciences Approximation Channels Compact MOSFET model Computer simulation device physics Electric, optical and optoelectronic circuits Electronics Exact sciences and technology iterative solution Mathematical models MOSFETs Radio frequencies RF features Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductors surface potentials Theoretical study. Circuits analysis and design Transistors
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