A comparative study of nanocrystalline Cu film deposited using anodic vacuum arc and dc magnetron sputtering
A comparative study of structural, electrical and thermoelectric properties of nanocrystalline copper thin films deposited using anodic vacuum arc plasma deposition technique and dc-magnetron sputtering is presented. The crystallographic texture and structural evolution of these films are investigat...
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| Veröffentlicht in: | Surface & coatings technology 2011-06, Vol.205 (19), p.4582-4595 |
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| creator | Mukherjee, S.K. Joshi, L. Barhai, P.K. |
| description | A comparative study of structural, electrical and thermoelectric properties of nanocrystalline copper thin films deposited using anodic vacuum arc plasma deposition technique and dc-magnetron sputtering is presented. The crystallographic texture and structural evolution of these films are investigated as a function of thickness within a range of 30 to 230nm using XRD and SEM. AVA deposited Cu films possess smaller grains with a lesser degree of crystallinity than dc-sputtered ones. Electrical resistivity, temperature coefficient of resistance and thermoelectric power of both as-deposited and annealed Cu films of AVA and dc-magnetron sputtering is measured and their dependence on the film thickness is investigated. AVA deposited Cu films having thickness less than 100nm show much higher resistivity than dc-sputtered ones. AVA deposited Cu films possess lower temperature coefficient of resistance values than dc-sputtered ones. The observed thickness dependence of thermoelectric power is larger in AVA deposited Cu films than in dc-sputtered ones. These electrical measurements reveal that AVA deposited Cu films possess more vacancies than dc-sputtered ones.
► AVA deposition rate is much higher than that of sputter deposition. ► AVA-deposited Cu films possess smaller crystallites than dc-sputtered ones. ► AVA deposited films having thickness less than 100 nm are more resistive. ► AVA deposited Cu films show lower temperature coefficient of resistance. ► The change in thermoelectric power w.r.t. Cu bulk is higher in AVA deposited films. |
| doi_str_mv | 10.1016/j.surfcoat.2011.03.119 |
| format | Article |
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► AVA deposition rate is much higher than that of sputter deposition. ► AVA-deposited Cu films possess smaller crystallites than dc-sputtered ones. ► AVA deposited films having thickness less than 100 nm are more resistive. ► AVA deposited Cu films show lower temperature coefficient of resistance. ► The change in thermoelectric power w.r.t. Cu bulk is higher in AVA deposited films.</description><identifier>ISSN: 0257-8972</identifier><identifier>EISSN: 1879-3347</identifier><identifier>DOI: 10.1016/j.surfcoat.2011.03.119</identifier><identifier>CODEN: SCTEEJ</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>ANODES ; Anodic vacuum arc ; Applied sciences ; Arc deposition ; ARCS ; Coefficients ; Copper ; Cross-disciplinary physics: materials science; rheology ; CRYSTAL STRUCTURE ; DEPOSITION ; Electric power generation ; ELECTRICAL CONDUCTIVITY ; Electrical resistivity ; ELECTRICITY ; Exact sciences and technology ; Magnetron sputtering ; Materials science ; Metals. Metallurgy ; Nanocrystalline ; Physics ; Production techniques ; Resistivity ; SPUTTERING ; Surface treatment ; Surface treatments ; Texture ; TEXTURES ; Thermoelectricity ; XRD</subject><ispartof>Surface & coatings technology, 2011-06, Vol.205 (19), p.4582-4595</ispartof><rights>2011 Elsevier B.V.</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c374t-33ea8d203df87bcb91d615865864799f9c30626fa706de96bf81a5ac628596013</citedby><cites>FETCH-LOGICAL-c374t-33ea8d203df87bcb91d615865864799f9c30626fa706de96bf81a5ac628596013</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.surfcoat.2011.03.119$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3550,27924,27925,45995</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=24209050$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Mukherjee, S.K.</creatorcontrib><creatorcontrib>Joshi, L.</creatorcontrib><creatorcontrib>Barhai, P.K.</creatorcontrib><title>A comparative study of nanocrystalline Cu film deposited using anodic vacuum arc and dc magnetron sputtering</title><title>Surface & coatings technology</title><description>A comparative study of structural, electrical and thermoelectric properties of nanocrystalline copper thin films deposited using anodic vacuum arc plasma deposition technique and dc-magnetron sputtering is presented. The crystallographic texture and structural evolution of these films are investigated as a function of thickness within a range of 30 to 230nm using XRD and SEM. AVA deposited Cu films possess smaller grains with a lesser degree of crystallinity than dc-sputtered ones. Electrical resistivity, temperature coefficient of resistance and thermoelectric power of both as-deposited and annealed Cu films of AVA and dc-magnetron sputtering is measured and their dependence on the film thickness is investigated. AVA deposited Cu films having thickness less than 100nm show much higher resistivity than dc-sputtered ones. AVA deposited Cu films possess lower temperature coefficient of resistance values than dc-sputtered ones. The observed thickness dependence of thermoelectric power is larger in AVA deposited Cu films than in dc-sputtered ones. These electrical measurements reveal that AVA deposited Cu films possess more vacancies than dc-sputtered ones.
► AVA deposition rate is much higher than that of sputter deposition. ► AVA-deposited Cu films possess smaller crystallites than dc-sputtered ones. ► AVA deposited films having thickness less than 100 nm are more resistive. ► AVA deposited Cu films show lower temperature coefficient of resistance. ► The change in thermoelectric power w.r.t. Cu bulk is higher in AVA deposited films.</description><subject>ANODES</subject><subject>Anodic vacuum arc</subject><subject>Applied sciences</subject><subject>Arc deposition</subject><subject>ARCS</subject><subject>Coefficients</subject><subject>Copper</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>CRYSTAL STRUCTURE</subject><subject>DEPOSITION</subject><subject>Electric power generation</subject><subject>ELECTRICAL CONDUCTIVITY</subject><subject>Electrical resistivity</subject><subject>ELECTRICITY</subject><subject>Exact sciences and technology</subject><subject>Magnetron sputtering</subject><subject>Materials science</subject><subject>Metals. Metallurgy</subject><subject>Nanocrystalline</subject><subject>Physics</subject><subject>Production techniques</subject><subject>Resistivity</subject><subject>SPUTTERING</subject><subject>Surface treatment</subject><subject>Surface treatments</subject><subject>Texture</subject><subject>TEXTURES</subject><subject>Thermoelectricity</subject><subject>XRD</subject><issn>0257-8972</issn><issn>1879-3347</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNqFkFuLFDEQhYMoOK7-BcmL-DS9uXTn8uYyuCos7Is-h0wlWTJ0d9pcBubfm2VWX4WCguI7daoOQh8pGSih4vY0lJYDJFsHRigdCB8o1a_Qjiqp95yP8jXaETbJvdKSvUXvSjkRQqjU4w7NdxjSstlsazx7XGpzF5wCXu2aIF9KtfMcV48PDYc4L9j5LZVYvcOtxPUJd8xFwGcLrS3YZugThx3gxT6tvua04rK1Wn3u9Hv0Jti5-A8v_Qb9uv_68_B9__D47cfh7mEPXI61n-ytcoxwF5Q8wlFTJ-ikRK9Rah00cCKYCFYS4bwWx6ConSwIpiYtCOU36PN175bT7-ZLNUss4OfZrj61YpTSXDHGxk6KKwk5lZJ9MFuOi80XQ4l5TteczN90zXO6hnDT0-3CTy8WtoCdQ7YrxPJPzUZGNJlI575cOd__PUefTYHoV_AuZg_VuBT_Z_UHuXmVNA</recordid><startdate>20110625</startdate><enddate>20110625</enddate><creator>Mukherjee, S.K.</creator><creator>Joshi, L.</creator><creator>Barhai, P.K.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>H8G</scope><scope>JG9</scope></search><sort><creationdate>20110625</creationdate><title>A comparative study of nanocrystalline Cu film deposited using anodic vacuum arc and dc magnetron sputtering</title><author>Mukherjee, S.K. ; Joshi, L. ; Barhai, P.K.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c374t-33ea8d203df87bcb91d615865864799f9c30626fa706de96bf81a5ac628596013</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>ANODES</topic><topic>Anodic vacuum arc</topic><topic>Applied sciences</topic><topic>Arc deposition</topic><topic>ARCS</topic><topic>Coefficients</topic><topic>Copper</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>CRYSTAL STRUCTURE</topic><topic>DEPOSITION</topic><topic>Electric power generation</topic><topic>ELECTRICAL CONDUCTIVITY</topic><topic>Electrical resistivity</topic><topic>ELECTRICITY</topic><topic>Exact sciences and technology</topic><topic>Magnetron sputtering</topic><topic>Materials science</topic><topic>Metals. Metallurgy</topic><topic>Nanocrystalline</topic><topic>Physics</topic><topic>Production techniques</topic><topic>Resistivity</topic><topic>SPUTTERING</topic><topic>Surface treatment</topic><topic>Surface treatments</topic><topic>Texture</topic><topic>TEXTURES</topic><topic>Thermoelectricity</topic><topic>XRD</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Mukherjee, S.K.</creatorcontrib><creatorcontrib>Joshi, L.</creatorcontrib><creatorcontrib>Barhai, P.K.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Copper Technical Reference Library</collection><collection>Materials Research Database</collection><jtitle>Surface & coatings technology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Mukherjee, S.K.</au><au>Joshi, L.</au><au>Barhai, P.K.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A comparative study of nanocrystalline Cu film deposited using anodic vacuum arc and dc magnetron sputtering</atitle><jtitle>Surface & coatings technology</jtitle><date>2011-06-25</date><risdate>2011</risdate><volume>205</volume><issue>19</issue><spage>4582</spage><epage>4595</epage><pages>4582-4595</pages><issn>0257-8972</issn><eissn>1879-3347</eissn><coden>SCTEEJ</coden><abstract>A comparative study of structural, electrical and thermoelectric properties of nanocrystalline copper thin films deposited using anodic vacuum arc plasma deposition technique and dc-magnetron sputtering is presented. The crystallographic texture and structural evolution of these films are investigated as a function of thickness within a range of 30 to 230nm using XRD and SEM. AVA deposited Cu films possess smaller grains with a lesser degree of crystallinity than dc-sputtered ones. Electrical resistivity, temperature coefficient of resistance and thermoelectric power of both as-deposited and annealed Cu films of AVA and dc-magnetron sputtering is measured and their dependence on the film thickness is investigated. AVA deposited Cu films having thickness less than 100nm show much higher resistivity than dc-sputtered ones. AVA deposited Cu films possess lower temperature coefficient of resistance values than dc-sputtered ones. The observed thickness dependence of thermoelectric power is larger in AVA deposited Cu films than in dc-sputtered ones. These electrical measurements reveal that AVA deposited Cu films possess more vacancies than dc-sputtered ones.
► AVA deposition rate is much higher than that of sputter deposition. ► AVA-deposited Cu films possess smaller crystallites than dc-sputtered ones. ► AVA deposited films having thickness less than 100 nm are more resistive. ► AVA deposited Cu films show lower temperature coefficient of resistance. ► The change in thermoelectric power w.r.t. Cu bulk is higher in AVA deposited films.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.surfcoat.2011.03.119</doi><tpages>14</tpages></addata></record> |
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| subjects | ANODES Anodic vacuum arc Applied sciences Arc deposition ARCS Coefficients Copper Cross-disciplinary physics: materials science rheology CRYSTAL STRUCTURE DEPOSITION Electric power generation ELECTRICAL CONDUCTIVITY Electrical resistivity ELECTRICITY Exact sciences and technology Magnetron sputtering Materials science Metals. Metallurgy Nanocrystalline Physics Production techniques Resistivity SPUTTERING Surface treatment Surface treatments Texture TEXTURES Thermoelectricity XRD |
| title | A comparative study of nanocrystalline Cu film deposited using anodic vacuum arc and dc magnetron sputtering |
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