On the scaling limit of ultrathin SOI MOSFETs

In this paper, a detailed study on the scaling limit of ultrathin silicon-on-insulator (SOI) MOSFETs is presented. Due to the penetration of lateral source/drain fields into standard thick buried oxide, the scale-length theory does not apply to thin SOI MOSFETs. An extensive two-dimensional device s...

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Veröffentlicht in:	IEEE transactions on electron devices 2006-05, Vol.53 (5), p.1137-1141
Hauptverfasser:	LU, Wei-Yuan, TAUR, Yuan
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Buried oxide (BOX) thickness Channels Devices Doping Electronics Exact sciences and technology Gates Insulators lateral-field analysis MOSFETs Oxides Semiconductor device modeling Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices short-channel effect (SCE) Silicon on insulator technology silicon-on-insulator (SOI) MOSFET Titanium Transistors
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