Thermally Assisted Transition in Thin Film Based FCL: A Way to Speed Up the Normal Transition Across the Wafer

The adjunction of constrictions along the meander of a superconducting fault current limiter (FCL) greatly improves its behavior thanks to a better distribution of the dissipative zones at the occurrence of a short circuit. This design works perfectly for symmetrical short circuit (i.e. short circui...

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Veröffentlicht in:IEEE transactions on applied superconductivity 2007-06, Vol.17 (2), p.3463-3466
Hauptverfasser: Antognazza, L., Decroux, M., Therasse, M., Abplanalp, M., Duron, J., Dutoit, B., Fischer, O.
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container_end_page 3466
container_issue 2
container_start_page 3463
container_title IEEE transactions on applied superconductivity
container_volume 17
creator Antognazza, L.
Decroux, M.
Therasse, M.
Abplanalp, M.
Duron, J.
Dutoit, B.
Fischer, O.
description The adjunction of constrictions along the meander of a superconducting fault current limiter (FCL) greatly improves its behavior thanks to a better distribution of the dissipative zones at the occurrence of a short circuit. This design works perfectly for symmetrical short circuit (i.e. short circuit at the maximum voltage). However for asymmetrical short circuits (at voltages close to 0), we are facing a problem due to the small number of the initially switched constrictions. To solve this problem, we test the possibility to speed up the transition into the normal state of the whole meander by heating it locally. This thermally assisted transition is realized by growing a gold layer on the backside of the substrate and by patterning it into a meander with its dissipative parts lying just underneath the constrictions of the FCL. This gold meander can be either connected in parallel with the superconducting meander or a capacitor bank can supply the current. In order to confirm the benefit of the thermally assisted transition we have carefully measured the behavior of the FCL during constant current and low voltage pulses as a function of the power injected into the gold line. We present results showing that the response of the FCL to the generated heat is very fast; typically less than 100 mus. Furthermore the distribution of the dissipated power across the wafer, during asymmetrical AC short circuit, is clearly improved.
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fullrecord <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_proquest_miscellaneous_889377467</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>4278036</ieee_id><sourcerecordid>2544764541</sourcerecordid><originalsourceid>FETCH-LOGICAL-c352t-3a1b80013adbb92c78ab208d7a2f43be4f7b51b76f6baa832ca5d3b0bf10e73b3</originalsourceid><addsrcrecordid>eNpdkM9LwzAcxYsoOKd3wUsQxFNnfjRN6q0Op8LQwzp2DN90Kcvo2pl0h_33ppuoeEnC933e45sXRdcEjwjB2UORz8YjirEYySzjWXoSDQjnMqac8NPwxpzEklJ2Hl14v8aYJDLhg6gpVsZtoK73KPfe-s4sUeGg8bazbYNsg4pVOCa23qAn8EGdjKePKEcL2KOuRbOtCbP5FnUrg97bPuqvPy9d6_1BXEBl3GV0VkHtzdX3PYzmk-di_BpPP17exvk0LhmnXcyAaBl2ZLDUOqOlkKAplksBtEqYNkklNCdapFWqASSjJfAl01hXBBvBNBtG98fcrWs_d8Z3amN9aeoaGtPuvJIyY0IkqQjk7T9y3e5cE5ZTGaGUkiRNAoSP0OE7zlRq6-wG3F4RrPr6VV-_6utXx_qD5e47F3wJdRU6Ka3_9WWYCMxx4G6OnDXG_MgJFRKzlH0BHAGM5Q</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>912221464</pqid></control><display><type>article</type><title>Thermally Assisted Transition in Thin Film Based FCL: A Way to Speed Up the Normal Transition Across the Wafer</title><source>IEEE Electronic Library (IEL)</source><creator>Antognazza, L. ; Decroux, M. ; Therasse, M. ; Abplanalp, M. ; Duron, J. ; Dutoit, B. ; Fischer, O.</creator><creatorcontrib>Antognazza, L. ; Decroux, M. ; Therasse, M. ; Abplanalp, M. ; Duron, J. ; Dutoit, B. ; Fischer, O.</creatorcontrib><description>The adjunction of constrictions along the meander of a superconducting fault current limiter (FCL) greatly improves its behavior thanks to a better distribution of the dissipative zones at the occurrence of a short circuit. This design works perfectly for symmetrical short circuit (i.e. short circuit at the maximum voltage). However for asymmetrical short circuits (at voltages close to 0), we are facing a problem due to the small number of the initially switched constrictions. To solve this problem, we test the possibility to speed up the transition into the normal state of the whole meander by heating it locally. This thermally assisted transition is realized by growing a gold layer on the backside of the substrate and by patterning it into a meander with its dissipative parts lying just underneath the constrictions of the FCL. This gold meander can be either connected in parallel with the superconducting meander or a capacitor bank can supply the current. In order to confirm the benefit of the thermally assisted transition we have carefully measured the behavior of the FCL during constant current and low voltage pulses as a function of the power injected into the gold line. We present results showing that the response of the FCL to the generated heat is very fast; typically less than 100 mus. Furthermore the distribution of the dissipated power across the wafer, during asymmetrical AC short circuit, is clearly improved.</description><identifier>ISSN: 1051-8223</identifier><identifier>EISSN: 1558-2515</identifier><identifier>DOI: 10.1109/TASC.2007.899596</identifier><identifier>CODEN: ITASE9</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Capacitors. Resistors. Filters ; Circuit testing ; Connection and protection apparatus ; Constrictions ; Dielectric, amorphous and glass solid devices ; Dissipation ; Electric potential ; Electrical engineering. Electrical power engineering ; Electronics ; Exact sciences and technology ; Fault current limiters ; Gold ; Heating ; high temperature superconductors ; Meanders ; Pulse measurements ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Short circuits ; Superconducting devices ; superconducting films ; Superconducting thin films ; Superconductivity ; Switching circuits ; Thin film circuits ; Thin films ; Transistors ; Various equipment and components ; Voltage</subject><ispartof>IEEE transactions on applied superconductivity, 2007-06, Vol.17 (2), p.3463-3466</ispartof><rights>2007 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2007</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c352t-3a1b80013adbb92c78ab208d7a2f43be4f7b51b76f6baa832ca5d3b0bf10e73b3</citedby><cites>FETCH-LOGICAL-c352t-3a1b80013adbb92c78ab208d7a2f43be4f7b51b76f6baa832ca5d3b0bf10e73b3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4278036$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,314,780,784,789,790,796,23930,23931,25140,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4278036$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=19017050$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Antognazza, L.</creatorcontrib><creatorcontrib>Decroux, M.</creatorcontrib><creatorcontrib>Therasse, M.</creatorcontrib><creatorcontrib>Abplanalp, M.</creatorcontrib><creatorcontrib>Duron, J.</creatorcontrib><creatorcontrib>Dutoit, B.</creatorcontrib><creatorcontrib>Fischer, O.</creatorcontrib><title>Thermally Assisted Transition in Thin Film Based FCL: A Way to Speed Up the Normal Transition Across the Wafer</title><title>IEEE transactions on applied superconductivity</title><addtitle>TASC</addtitle><description>The adjunction of constrictions along the meander of a superconducting fault current limiter (FCL) greatly improves its behavior thanks to a better distribution of the dissipative zones at the occurrence of a short circuit. This design works perfectly for symmetrical short circuit (i.e. short circuit at the maximum voltage). However for asymmetrical short circuits (at voltages close to 0), we are facing a problem due to the small number of the initially switched constrictions. To solve this problem, we test the possibility to speed up the transition into the normal state of the whole meander by heating it locally. This thermally assisted transition is realized by growing a gold layer on the backside of the substrate and by patterning it into a meander with its dissipative parts lying just underneath the constrictions of the FCL. This gold meander can be either connected in parallel with the superconducting meander or a capacitor bank can supply the current. In order to confirm the benefit of the thermally assisted transition we have carefully measured the behavior of the FCL during constant current and low voltage pulses as a function of the power injected into the gold line. We present results showing that the response of the FCL to the generated heat is very fast; typically less than 100 mus. Furthermore the distribution of the dissipated power across the wafer, during asymmetrical AC short circuit, is clearly improved.</description><subject>Applied sciences</subject><subject>Capacitors. Resistors. Filters</subject><subject>Circuit testing</subject><subject>Connection and protection apparatus</subject><subject>Constrictions</subject><subject>Dielectric, amorphous and glass solid devices</subject><subject>Dissipation</subject><subject>Electric potential</subject><subject>Electrical engineering. Electrical power engineering</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Fault current limiters</subject><subject>Gold</subject><subject>Heating</subject><subject>high temperature superconductors</subject><subject>Meanders</subject><subject>Pulse measurements</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Short circuits</subject><subject>Superconducting devices</subject><subject>superconducting films</subject><subject>Superconducting thin films</subject><subject>Superconductivity</subject><subject>Switching circuits</subject><subject>Thin film circuits</subject><subject>Thin films</subject><subject>Transistors</subject><subject>Various equipment and components</subject><subject>Voltage</subject><issn>1051-8223</issn><issn>1558-2515</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkM9LwzAcxYsoOKd3wUsQxFNnfjRN6q0Op8LQwzp2DN90Kcvo2pl0h_33ppuoeEnC933e45sXRdcEjwjB2UORz8YjirEYySzjWXoSDQjnMqac8NPwxpzEklJ2Hl14v8aYJDLhg6gpVsZtoK73KPfe-s4sUeGg8bazbYNsg4pVOCa23qAn8EGdjKePKEcL2KOuRbOtCbP5FnUrg97bPuqvPy9d6_1BXEBl3GV0VkHtzdX3PYzmk-di_BpPP17exvk0LhmnXcyAaBl2ZLDUOqOlkKAplksBtEqYNkklNCdapFWqASSjJfAl01hXBBvBNBtG98fcrWs_d8Z3amN9aeoaGtPuvJIyY0IkqQjk7T9y3e5cE5ZTGaGUkiRNAoSP0OE7zlRq6-wG3F4RrPr6VV-_6utXx_qD5e47F3wJdRU6Ka3_9WWYCMxx4G6OnDXG_MgJFRKzlH0BHAGM5Q</recordid><startdate>20070601</startdate><enddate>20070601</enddate><creator>Antognazza, L.</creator><creator>Decroux, M.</creator><creator>Therasse, M.</creator><creator>Abplanalp, M.</creator><creator>Duron, J.</creator><creator>Dutoit, B.</creator><creator>Fischer, O.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20070601</creationdate><title>Thermally Assisted Transition in Thin Film Based FCL: A Way to Speed Up the Normal Transition Across the Wafer</title><author>Antognazza, L. ; Decroux, M. ; Therasse, M. ; Abplanalp, M. ; Duron, J. ; Dutoit, B. ; Fischer, O.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c352t-3a1b80013adbb92c78ab208d7a2f43be4f7b51b76f6baa832ca5d3b0bf10e73b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><topic>Applied sciences</topic><topic>Capacitors. Resistors. Filters</topic><topic>Circuit testing</topic><topic>Connection and protection apparatus</topic><topic>Constrictions</topic><topic>Dielectric, amorphous and glass solid devices</topic><topic>Dissipation</topic><topic>Electric potential</topic><topic>Electrical engineering. Electrical power engineering</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Fault current limiters</topic><topic>Gold</topic><topic>Heating</topic><topic>high temperature superconductors</topic><topic>Meanders</topic><topic>Pulse measurements</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Short circuits</topic><topic>Superconducting devices</topic><topic>superconducting films</topic><topic>Superconducting thin films</topic><topic>Superconductivity</topic><topic>Switching circuits</topic><topic>Thin film circuits</topic><topic>Thin films</topic><topic>Transistors</topic><topic>Various equipment and components</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Antognazza, L.</creatorcontrib><creatorcontrib>Decroux, M.</creatorcontrib><creatorcontrib>Therasse, M.</creatorcontrib><creatorcontrib>Abplanalp, M.</creatorcontrib><creatorcontrib>Duron, J.</creatorcontrib><creatorcontrib>Dutoit, B.</creatorcontrib><creatorcontrib>Fischer, O.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology &amp; Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE transactions on applied superconductivity</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Antognazza, L.</au><au>Decroux, M.</au><au>Therasse, M.</au><au>Abplanalp, M.</au><au>Duron, J.</au><au>Dutoit, B.</au><au>Fischer, O.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Thermally Assisted Transition in Thin Film Based FCL: A Way to Speed Up the Normal Transition Across the Wafer</atitle><jtitle>IEEE transactions on applied superconductivity</jtitle><stitle>TASC</stitle><date>2007-06-01</date><risdate>2007</risdate><volume>17</volume><issue>2</issue><spage>3463</spage><epage>3466</epage><pages>3463-3466</pages><issn>1051-8223</issn><eissn>1558-2515</eissn><coden>ITASE9</coden><abstract>The adjunction of constrictions along the meander of a superconducting fault current limiter (FCL) greatly improves its behavior thanks to a better distribution of the dissipative zones at the occurrence of a short circuit. This design works perfectly for symmetrical short circuit (i.e. short circuit at the maximum voltage). However for asymmetrical short circuits (at voltages close to 0), we are facing a problem due to the small number of the initially switched constrictions. To solve this problem, we test the possibility to speed up the transition into the normal state of the whole meander by heating it locally. This thermally assisted transition is realized by growing a gold layer on the backside of the substrate and by patterning it into a meander with its dissipative parts lying just underneath the constrictions of the FCL. This gold meander can be either connected in parallel with the superconducting meander or a capacitor bank can supply the current. In order to confirm the benefit of the thermally assisted transition we have carefully measured the behavior of the FCL during constant current and low voltage pulses as a function of the power injected into the gold line. We present results showing that the response of the FCL to the generated heat is very fast; typically less than 100 mus. Furthermore the distribution of the dissipated power across the wafer, during asymmetrical AC short circuit, is clearly improved.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TASC.2007.899596</doi><tpages>4</tpages></addata></record>
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source IEEE Electronic Library (IEL)
subjects Applied sciences
Capacitors. Resistors. Filters
Circuit testing
Connection and protection apparatus
Constrictions
Dielectric, amorphous and glass solid devices
Dissipation
Electric potential
Electrical engineering. Electrical power engineering
Electronics
Exact sciences and technology
Fault current limiters
Gold
Heating
high temperature superconductors
Meanders
Pulse measurements
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Short circuits
Superconducting devices
superconducting films
Superconducting thin films
Superconductivity
Switching circuits
Thin film circuits
Thin films
Transistors
Various equipment and components
Voltage
title Thermally Assisted Transition in Thin Film Based FCL: A Way to Speed Up the Normal Transition Across the Wafer
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-28T01%3A53%3A16IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Thermally%20Assisted%20Transition%20in%20Thin%20Film%20Based%20FCL:%20A%20Way%20to%20Speed%20Up%20the%20Normal%20Transition%20Across%20the%20Wafer&rft.jtitle=IEEE%20transactions%20on%20applied%20superconductivity&rft.au=Antognazza,%20L.&rft.date=2007-06-01&rft.volume=17&rft.issue=2&rft.spage=3463&rft.epage=3466&rft.pages=3463-3466&rft.issn=1051-8223&rft.eissn=1558-2515&rft.coden=ITASE9&rft_id=info:doi/10.1109/TASC.2007.899596&rft_dat=%3Cproquest_RIE%3E2544764541%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=912221464&rft_id=info:pmid/&rft_ieee_id=4278036&rfr_iscdi=true