Ultraviolet Single Photon Detection With Geiger-Mode 4H-SiC Avalanche Photodiodes
We report 4H-SiC avalanche photodiodes operated in Geiger mode for single photon detection at 265 nm. At room temperature, the single photon detection efficiency is 14% with a dark count probability of 1.7 x 10 -4 . Since the external quantum efficiency is 21% at 265 nm, it follows that 65% of the a...
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Veröffentlicht in: | IEEE photonics technology letters 2007-11, Vol.19 (22), p.1822-1824 |
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creator | Xiaogang Bai Mcintosh, D. Handin Liu Campbell, J.C. |
description | We report 4H-SiC avalanche photodiodes operated in Geiger mode for single photon detection at 265 nm. At room temperature, the single photon detection efficiency is 14% with a dark count probability of 1.7 x 10 -4 . Since the external quantum efficiency is 21% at 265 nm, it follows that 65% of the absorbed photons are counted as avalanche events. The jitter of the photodiodes is also characterized. |
doi_str_mv | 10.1109/LPT.2007.906830 |
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At room temperature, the single photon detection efficiency is 14% with a dark count probability of 1.7 x 10 -4 . Since the external quantum efficiency is 21% at 265 nm, it follows that 65% of the absorbed photons are counted as avalanche events. The jitter of the photodiodes is also characterized.</description><identifier>ISSN: 1041-1135</identifier><identifier>EISSN: 1941-0174</identifier><identifier>DOI: 10.1109/LPT.2007.906830</identifier><identifier>CODEN: IPTLEL</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Avalanche photodiodes ; Avalanches ; Counting ; Dark current ; Detectors ; Electric breakdown ; Jitter ; photodetector ; Photodetectors ; Photodiodes ; Photonics ; Photons ; Quantum efficiency ; Silicon carbide ; Temperature distribution ; Ultraviolet ; ultraviolet detector ; Voltage</subject><ispartof>IEEE photonics technology letters, 2007-11, Vol.19 (22), p.1822-1824</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2007</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c351t-54efd6ae1482e20aa2295acb63df2d741596ce412003282c5a9b8e3db2c2ed4a3</citedby><cites>FETCH-LOGICAL-c351t-54efd6ae1482e20aa2295acb63df2d741596ce412003282c5a9b8e3db2c2ed4a3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4367517$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27922,27923,54756</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4367517$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Xiaogang Bai</creatorcontrib><creatorcontrib>Mcintosh, D.</creatorcontrib><creatorcontrib>Handin Liu</creatorcontrib><creatorcontrib>Campbell, J.C.</creatorcontrib><title>Ultraviolet Single Photon Detection With Geiger-Mode 4H-SiC Avalanche Photodiodes</title><title>IEEE photonics technology letters</title><addtitle>LPT</addtitle><description>We report 4H-SiC avalanche photodiodes operated in Geiger mode for single photon detection at 265 nm. At room temperature, the single photon detection efficiency is 14% with a dark count probability of 1.7 x 10 -4 . Since the external quantum efficiency is 21% at 265 nm, it follows that 65% of the absorbed photons are counted as avalanche events. The jitter of the photodiodes is also characterized.</description><subject>Avalanche photodiodes</subject><subject>Avalanches</subject><subject>Counting</subject><subject>Dark current</subject><subject>Detectors</subject><subject>Electric breakdown</subject><subject>Jitter</subject><subject>photodetector</subject><subject>Photodetectors</subject><subject>Photodiodes</subject><subject>Photonics</subject><subject>Photons</subject><subject>Quantum efficiency</subject><subject>Silicon carbide</subject><subject>Temperature distribution</subject><subject>Ultraviolet</subject><subject>ultraviolet detector</subject><subject>Voltage</subject><issn>1041-1135</issn><issn>1941-0174</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kc9PwjAcxRujiYiePXhZPOhp0N_bjgQVTDBigHhsSvcdlIwV10Hif2_JiAcPnr4v-X5e29eH0C3BPUJw1p9M5z2KcdLLsEwZPkMdknESY5Lw86Bx0IQwcYmuvN9gTLhgvIM-FmVT64N1JTTRzFarEqLp2jWuip6gAdPYoD5ts45GYFdQx28uh4iP45kdRoODLnVl1idLbsPOX6OLQpcebk6zixYvz_PhOJ68j16Hg0lsmCBNLDgUudRAeEqBYq0pzYQ2S8nyguYJJyKTBjgJkRhNqRE6W6bA8iU1FHKuWRc9tufuave1B9-orfUGyvAicHuv0hTLhAhGAvnwL8k4z1j4pwDe_wE3bl9XIYVKJZdCSs4C1G8hUzvvayjUrrZbXX8rgtWxCRWaUMcmVNtEcNy1DgsAvzRnMhHh0h8KdYLe</recordid><startdate>20071115</startdate><enddate>20071115</enddate><creator>Xiaogang Bai</creator><creator>Mcintosh, D.</creator><creator>Handin Liu</creator><creator>Campbell, J.C.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20071115</creationdate><title>Ultraviolet Single Photon Detection With Geiger-Mode 4H-SiC Avalanche Photodiodes</title><author>Xiaogang Bai ; Mcintosh, D. ; Handin Liu ; Campbell, J.C.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c351t-54efd6ae1482e20aa2295acb63df2d741596ce412003282c5a9b8e3db2c2ed4a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><topic>Avalanche photodiodes</topic><topic>Avalanches</topic><topic>Counting</topic><topic>Dark current</topic><topic>Detectors</topic><topic>Electric breakdown</topic><topic>Jitter</topic><topic>photodetector</topic><topic>Photodetectors</topic><topic>Photodiodes</topic><topic>Photonics</topic><topic>Photons</topic><topic>Quantum efficiency</topic><topic>Silicon carbide</topic><topic>Temperature distribution</topic><topic>Ultraviolet</topic><topic>ultraviolet detector</topic><topic>Voltage</topic><toplevel>online_resources</toplevel><creatorcontrib>Xiaogang Bai</creatorcontrib><creatorcontrib>Mcintosh, D.</creatorcontrib><creatorcontrib>Handin Liu</creatorcontrib><creatorcontrib>Campbell, J.C.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005–Present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE photonics technology letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Xiaogang Bai</au><au>Mcintosh, D.</au><au>Handin Liu</au><au>Campbell, J.C.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Ultraviolet Single Photon Detection With Geiger-Mode 4H-SiC Avalanche Photodiodes</atitle><jtitle>IEEE photonics technology letters</jtitle><stitle>LPT</stitle><date>2007-11-15</date><risdate>2007</risdate><volume>19</volume><issue>22</issue><spage>1822</spage><epage>1824</epage><pages>1822-1824</pages><issn>1041-1135</issn><eissn>1941-0174</eissn><coden>IPTLEL</coden><abstract>We report 4H-SiC avalanche photodiodes operated in Geiger mode for single photon detection at 265 nm. At room temperature, the single photon detection efficiency is 14% with a dark count probability of 1.7 x 10 -4 . Since the external quantum efficiency is 21% at 265 nm, it follows that 65% of the absorbed photons are counted as avalanche events. The jitter of the photodiodes is also characterized.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/LPT.2007.906830</doi><tpages>3</tpages></addata></record> |
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subjects | Avalanche photodiodes Avalanches Counting Dark current Detectors Electric breakdown Jitter photodetector Photodetectors Photodiodes Photonics Photons Quantum efficiency Silicon carbide Temperature distribution Ultraviolet ultraviolet detector Voltage |
title | Ultraviolet Single Photon Detection With Geiger-Mode 4H-SiC Avalanche Photodiodes |
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