Investigation of Surface Sputtering and Post Annealing Effects on Atomic Layer Deposited rm HfO 2 and rm TiO 2

Tetrakis (diethylamino) hafnium and tetrakis (diethylamino) titanium were used for the atomic layer deposition (ALD) of rm HfO 2 and rm TiO 2 films on silicon (100) substrates with water being the oxidant. Studies on the decomposition temperatures of both metal precursors within the reactor and on c...

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Veröffentlicht in:	IEEE transactions on semiconductor manufacturing 2011-05, Vol.24 (2), p.139-144
Hauptverfasser:	Tao, Qian, Jursich, Gregory M, Takoudis, Christos
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Deposition Semiconductors Silicon substrates Sputtering Titanium Titanium dioxide X-rays
Online-Zugang:	Volltext
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