Systematic Study of the Effects of Modulation p-Doping on 1.3-μm Quantum-Dot Lasers

The effects of modulation p-doping on 1.3-mum InGaAs-InAs quantum-dot (QD) lasers are systematically investigated using a series of wafers with doping levels from 0 to 18 acceptors per QD. Various characterization techniques for both laser diodes and surface-emitting light-emitting diode structures...

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Veröffentlicht in:	IEEE journal of quantum electronics 2007-11, Vol.43 (11-12), p.1129-1139
Hauptverfasser:	ALEXANDER, Ryan R, CHILDS, David T. D, ARAKAWA, Yasuhiko, BADCOCK, Tom J, ROYCE, Richard J, MOWBRAY, David J, AGARWAL, Harsh, GROOM, Kristian M, LIU, Hui-Yun, HOPKINSON, Mark, HOGG, Richard A, ISHIDA, Mitsuru, YAMAMOTO, Tsuyoshi, SUGAWARA, Mitsuru
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Fundamental areas of phenomenology (including applications) Gain Laser diodes Lasers Light-emitting diodes Modulation Optics Optoelectronic devices Physics Quantum dots Quantum electronics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductor lasers laser diodes Temperature dependence
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