Systematic Study of the Effects of Modulation p-Doping on 1.3-μm Quantum-Dot Lasers
The effects of modulation p-doping on 1.3-mum InGaAs-InAs quantum-dot (QD) lasers are systematically investigated using a series of wafers with doping levels from 0 to 18 acceptors per QD. Various characterization techniques for both laser diodes and surface-emitting light-emitting diode structures...
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| Veröffentlicht in: | IEEE journal of quantum electronics 2007-11, Vol.43 (11-12), p.1129-1139 |
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| container_title | IEEE journal of quantum electronics |
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| creator | ALEXANDER, Ryan R CHILDS, David T. D ARAKAWA, Yasuhiko BADCOCK, Tom J ROYCE, Richard J MOWBRAY, David J AGARWAL, Harsh GROOM, Kristian M LIU, Hui-Yun HOPKINSON, Mark HOGG, Richard A ISHIDA, Mitsuru YAMAMOTO, Tsuyoshi SUGAWARA, Mitsuru |
| description | The effects of modulation p-doping on 1.3-mum InGaAs-InAs quantum-dot (QD) lasers are systematically investigated using a series of wafers with doping levels from 0 to 18 acceptors per QD. Various characterization techniques for both laser diodes and surface-emitting light-emitting diode structures are employed. We report: 1) how the level of modulation p-doping alters the length dependant laser characteristics (in turn providing insight on various key parameters); 2) the effect of modulation p-doping on the temperature dependence of a number of factors and its role in obtaining an infinite T sub(0); 3) how increasing concentrations of modulation p-doping affects the saturated gain, differential gain, and gain profile of the lasers; and finally, 4) the effect modulation p-doping has on the small signal modulation properties of 1.3-mum QD lasers. In each of these areas, the role of modulation p-doping is established and critically discussed. |
| doi_str_mv | 10.1109/JQE.2007.907213 |
| format | Article |
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D ; ARAKAWA, Yasuhiko ; BADCOCK, Tom J ; ROYCE, Richard J ; MOWBRAY, David J ; AGARWAL, Harsh ; GROOM, Kristian M ; LIU, Hui-Yun ; HOPKINSON, Mark ; HOGG, Richard A ; ISHIDA, Mitsuru ; YAMAMOTO, Tsuyoshi ; SUGAWARA, Mitsuru</creator><creatorcontrib>ALEXANDER, Ryan R ; CHILDS, David T. D ; ARAKAWA, Yasuhiko ; BADCOCK, Tom J ; ROYCE, Richard J ; MOWBRAY, David J ; AGARWAL, Harsh ; GROOM, Kristian M ; LIU, Hui-Yun ; HOPKINSON, Mark ; HOGG, Richard A ; ISHIDA, Mitsuru ; YAMAMOTO, Tsuyoshi ; SUGAWARA, Mitsuru</creatorcontrib><description>The effects of modulation p-doping on 1.3-mum InGaAs-InAs quantum-dot (QD) lasers are systematically investigated using a series of wafers with doping levels from 0 to 18 acceptors per QD. Various characterization techniques for both laser diodes and surface-emitting light-emitting diode structures are employed. We report: 1) how the level of modulation p-doping alters the length dependant laser characteristics (in turn providing insight on various key parameters); 2) the effect of modulation p-doping on the temperature dependence of a number of factors and its role in obtaining an infinite T sub(0); 3) how increasing concentrations of modulation p-doping affects the saturated gain, differential gain, and gain profile of the lasers; and finally, 4) the effect modulation p-doping has on the small signal modulation properties of 1.3-mum QD lasers. In each of these areas, the role of modulation p-doping is established and critically discussed.</description><identifier>ISSN: 0018-9197</identifier><identifier>EISSN: 1558-1713</identifier><identifier>DOI: 10.1109/JQE.2007.907213</identifier><identifier>CODEN: IEJQA7</identifier><language>eng</language><publisher>New York, NY: Institute of Electrical and Electronics Engineers</publisher><subject>Applied sciences ; Electronics ; Exact sciences and technology ; Fundamental areas of phenomenology (including applications) ; Gain ; Laser diodes ; Lasers ; Light-emitting diodes ; Modulation ; Optics ; Optoelectronic devices ; Physics ; Quantum dots ; Quantum electronics ; Semiconductor electronics. Microelectronics. Optoelectronics. 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Various characterization techniques for both laser diodes and surface-emitting light-emitting diode structures are employed. We report: 1) how the level of modulation p-doping alters the length dependant laser characteristics (in turn providing insight on various key parameters); 2) the effect of modulation p-doping on the temperature dependence of a number of factors and its role in obtaining an infinite T sub(0); 3) how increasing concentrations of modulation p-doping affects the saturated gain, differential gain, and gain profile of the lasers; and finally, 4) the effect modulation p-doping has on the small signal modulation properties of 1.3-mum QD lasers. In each of these areas, the role of modulation p-doping is established and critically discussed.</description><subject>Applied sciences</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Fundamental areas of phenomenology (including applications)</subject><subject>Gain</subject><subject>Laser diodes</subject><subject>Lasers</subject><subject>Light-emitting diodes</subject><subject>Modulation</subject><subject>Optics</subject><subject>Optoelectronic devices</subject><subject>Physics</subject><subject>Quantum dots</subject><subject>Quantum electronics</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. 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| subjects | Applied sciences Electronics Exact sciences and technology Fundamental areas of phenomenology (including applications) Gain Laser diodes Lasers Light-emitting diodes Modulation Optics Optoelectronic devices Physics Quantum dots Quantum electronics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductor lasers laser diodes Temperature dependence |
| title | Systematic Study of the Effects of Modulation p-Doping on 1.3-μm Quantum-Dot Lasers |
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