Piezotronic Nanowire-Based Resistive Switches As Programmable Electromechanical Memories
We present the first piezoelectrically modulated resistive switching device based on piezotronic ZnO nanowire (NW), through which the write/read access of the memory cell is programmed via electromechanical modulation. Adjusted by the strain-induced polarization charges created at the semiconductor/...
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| Veröffentlicht in: | Nano letters 2011-07, Vol.11 (7), p.2779-2785 |
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| container_title | Nano letters |
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| creator | Wu, Wenzhuo Wang, Zhong Lin |
| description | We present the first piezoelectrically modulated resistive switching device based on piezotronic ZnO nanowire (NW), through which the write/read access of the memory cell is programmed via electromechanical modulation. Adjusted by the strain-induced polarization charges created at the semiconductor/metal interface under externally applied deformation by the piezoelectric effect, the resistive switching characteristics of the cell can be modulated in a controlled manner, and the logic levels of the strain stored in the cell can be recorded and read out, which has the potential for integrating with NEMS technology to achieve micro/nanosystems capable for intelligent and self-sufficient multidimensional operations. |
| doi_str_mv | 10.1021/nl201074a |
| format | Article |
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Adjusted by the strain-induced polarization charges created at the semiconductor/metal interface under externally applied deformation by the piezoelectric effect, the resistive switching characteristics of the cell can be modulated in a controlled manner, and the logic levels of the strain stored in the cell can be recorded and read out, which has the potential for integrating with NEMS technology to achieve micro/nanosystems capable for intelligent and self-sufficient multidimensional operations.</description><identifier>ISSN: 1530-6984</identifier><identifier>EISSN: 1530-6992</identifier><identifier>DOI: 10.1021/nl201074a</identifier><identifier>PMID: 21696172</identifier><language>eng</language><publisher>Washington, DC: American Chemical Society</publisher><subject>Applied sciences ; Cross-disciplinary physics: materials science; rheology ; Devices ; Electronics ; Exact sciences and technology ; Materials science ; Micro- and nanoelectromechanical devices (mems/nems) ; Modulation ; Nanocrystalline materials ; Nanoscale materials and structures: fabrication and characterization ; Nanotechnology ; Nanowires ; Nanowires - chemistry ; Oxygen - chemistry ; Particle Size ; Physics ; Piezoelectricity ; Quantum wires ; Semiconductor electronics. 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Adjusted by the strain-induced polarization charges created at the semiconductor/metal interface under externally applied deformation by the piezoelectric effect, the resistive switching characteristics of the cell can be modulated in a controlled manner, and the logic levels of the strain stored in the cell can be recorded and read out, which has the potential for integrating with NEMS technology to achieve micro/nanosystems capable for intelligent and self-sufficient multidimensional operations.</description><subject>Applied sciences</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Devices</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Materials science</subject><subject>Micro- and nanoelectromechanical devices (mems/nems)</subject><subject>Modulation</subject><subject>Nanocrystalline materials</subject><subject>Nanoscale materials and structures: fabrication and characterization</subject><subject>Nanotechnology</subject><subject>Nanowires</subject><subject>Nanowires - chemistry</subject><subject>Oxygen - chemistry</subject><subject>Particle Size</subject><subject>Physics</subject><subject>Piezoelectricity</subject><subject>Quantum wires</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Semiconductors</subject><subject>Strain</subject><subject>Surface Properties</subject><subject>Switches</subject><subject>Switching</subject><subject>Zinc Oxide - chemistry</subject><issn>1530-6984</issn><issn>1530-6992</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><sourceid>EIF</sourceid><recordid>eNqN0U1rFTEUBuAgiq21C_-AzEbUxdR8Z7KspX5Av9AWuhvOZM61KTOTNmeupf31jfT2diMiBJLFc97AeRl7I_iO4FJ8mgbJBXcanrFNYRSvrffy-frd6A32iuiSc-6V4S_ZhhTWW-HkJjs_iXiX5pymGKojmNJNzFh_BsK--oEUaY6_sfp5E-dwgVTtUnWS068M4wjdgNX-gKEMjxguoCTAUB3imHJEes1eLGAg3F7dW-zsy_7p3rf64Pjr973dgxq0s3PdO2l4A8Z3ppO95CoEtOUoMEZJBb1UGtQCA3eNNl3oNQ9SemcbbPrOG7XF3j_kXuV0vUSa2zFSwGGACdOS2sZZ5x33rsgP_5TCGaUbpa36P-oaK3ShHx9oyIko46K9ynGEfNsK3v5pp123U-zbVeyyG7Ffy8c6Cni3AkBlmYsMU4j05LTSyin35CBQe5mWeSor_suH94mIomY</recordid><startdate>20110713</startdate><enddate>20110713</enddate><creator>Wu, Wenzhuo</creator><creator>Wang, Zhong Lin</creator><general>American Chemical Society</general><scope>IQODW</scope><scope>CGR</scope><scope>CUY</scope><scope>CVF</scope><scope>ECM</scope><scope>EIF</scope><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope><scope>7X8</scope></search><sort><creationdate>20110713</creationdate><title>Piezotronic Nanowire-Based Resistive Switches As Programmable Electromechanical Memories</title><author>Wu, Wenzhuo ; Wang, Zhong Lin</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a476t-d72508a59b5b2d203cce6ce63a55323ad234a3fec07845bcd40c229768e8db953</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Applied sciences</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Devices</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Materials science</topic><topic>Micro- and nanoelectromechanical devices (mems/nems)</topic><topic>Modulation</topic><topic>Nanocrystalline materials</topic><topic>Nanoscale materials and structures: fabrication and characterization</topic><topic>Nanotechnology</topic><topic>Nanowires</topic><topic>Nanowires - chemistry</topic><topic>Oxygen - chemistry</topic><topic>Particle Size</topic><topic>Physics</topic><topic>Piezoelectricity</topic><topic>Quantum wires</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Semiconductors</topic><topic>Strain</topic><topic>Surface Properties</topic><topic>Switches</topic><topic>Switching</topic><topic>Zinc Oxide - chemistry</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Wu, Wenzhuo</creatorcontrib><creatorcontrib>Wang, Zhong Lin</creatorcontrib><collection>Pascal-Francis</collection><collection>Medline</collection><collection>MEDLINE</collection><collection>MEDLINE (Ovid)</collection><collection>MEDLINE</collection><collection>MEDLINE</collection><collection>PubMed</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>MEDLINE - Academic</collection><jtitle>Nano letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Wu, Wenzhuo</au><au>Wang, Zhong Lin</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Piezotronic Nanowire-Based Resistive Switches As Programmable Electromechanical Memories</atitle><jtitle>Nano letters</jtitle><addtitle>Nano Lett</addtitle><date>2011-07-13</date><risdate>2011</risdate><volume>11</volume><issue>7</issue><spage>2779</spage><epage>2785</epage><pages>2779-2785</pages><issn>1530-6984</issn><eissn>1530-6992</eissn><abstract>We present the first piezoelectrically modulated resistive switching device based on piezotronic ZnO nanowire (NW), through which the write/read access of the memory cell is programmed via electromechanical modulation. Adjusted by the strain-induced polarization charges created at the semiconductor/metal interface under externally applied deformation by the piezoelectric effect, the resistive switching characteristics of the cell can be modulated in a controlled manner, and the logic levels of the strain stored in the cell can be recorded and read out, which has the potential for integrating with NEMS technology to achieve micro/nanosystems capable for intelligent and self-sufficient multidimensional operations.</abstract><cop>Washington, DC</cop><pub>American Chemical Society</pub><pmid>21696172</pmid><doi>10.1021/nl201074a</doi><tpages>7</tpages></addata></record> |
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| ispartof | Nano letters, 2011-07, Vol.11 (7), p.2779-2785 |
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| language | eng |
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| subjects | Applied sciences Cross-disciplinary physics: materials science rheology Devices Electronics Exact sciences and technology Materials science Micro- and nanoelectromechanical devices (mems/nems) Modulation Nanocrystalline materials Nanoscale materials and structures: fabrication and characterization Nanotechnology Nanowires Nanowires - chemistry Oxygen - chemistry Particle Size Physics Piezoelectricity Quantum wires Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductors Strain Surface Properties Switches Switching Zinc Oxide - chemistry |
| title | Piezotronic Nanowire-Based Resistive Switches As Programmable Electromechanical Memories |
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