A Comprehensive Study of the Corner Effects in Pi-Gate MOSFETs Including Quantum Effects

In this paper, simulation-based research on the electrostatics of Pi-gate silicon-on-insulator (SOI) MOSFETs is carried out. To do so, a 2-D self-consistent Schrodinger-Poisson solver has been implemented. The inclusion of the quantum effects has been demonstrated to be necessary for the accurate si...

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Veröffentlicht in:	IEEE transactions on electron devices 2007-12, Vol.54 (12), p.3369-3377
Hauptverfasser:	Garcia Ruiz, F.J., Godoy, A., Gamiz, F., Sampedro, C., Donetti, L.
Format:	Artikel
Sprache:	eng
Schlagworte:	Channels Corner effects Corners Density Devices MOSFET MOSFETs multiple-gate (MuG) MOSFETs Oxides Quantum effects Semiconductor devices semiconductor-device modeling Silicon-on-insulator silicon-on-insulator (SOI) technology Simulation Solvers
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container_issue	12
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container_title	IEEE transactions on electron devices
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creator	Garcia Ruiz, F.J. Godoy, A. Gamiz, F. Sampedro, C. Donetti, L.
description	In this paper, simulation-based research on the electrostatics of Pi-gate silicon-on-insulator (SOI) MOSFETs is carried out. To do so, a 2-D self-consistent Schrodinger-Poisson solver has been implemented. The inclusion of the quantum effects has been demonstrated to be necessary for the accurate simulation of these devices in the nanometer range. Specifically, this paper is focused on the corner effects in multiple-gate SOI MOSFETs, defined as the formation of independent channels with different threshold voltages. Corner effects are studied as a function of different parameters, such as the doping density, silicon-fin dimensions, corner rounding, and gate oxide thickness. Finally, the relation between corner effects and the transition from a fully to a partially depleted body is analyzed.
doi_str_mv	10.1109/TED.2007.909206
format	Article
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subjects	Channels Corner effects Corners Density Devices MOSFET MOSFETs multiple-gate (MuG) MOSFETs Oxides Quantum effects Semiconductor devices semiconductor-device modeling Silicon-on-insulator silicon-on-insulator (SOI) technology Simulation Solvers
title	A Comprehensive Study of the Corner Effects in Pi-Gate MOSFETs Including Quantum Effects
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